Temperature-Dependent Evolution of Chemisorbed Digermane in Ge Thin Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Djula Eres ◽  
J. W. Sharp
Keyword(s):  
Thin Film ◽  
Active Sites ◽  
Film Growth ◽  
Hydrogen Desorption ◽  
Independent Study ◽  
Thin Film Growth ◽  
Time Resolved ◽  
Rate Limiting Step ◽  
Formation And Evolution ◽  
Substrate Temperatures

ABSTRACTThe formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time-resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses.

An oxygen-compatible radiant substrate heater for thin film growth at substrate temperatures up to 1050 °C

1997 ◽  
Vol 68 (6) ◽  
pp. 2538-2541 ◽  
Author(s):  
J. C. Clark ◽  
J. P. Maria ◽  
K. J. Hubbard ◽  
D. G. Schlom
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Substrate Temperatures

Investigation of the Kinetics of Surface-Limited thin Film Growth of SiGe Alloys by CVD of Si2H6/Ge2 H6 Mixtures

1992 ◽  
Vol 282 ◽  
Author(s):  
J. W. Sharp ◽  
Gyula Eres
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Gas Mixtures ◽  
Thin Film Growth ◽  
Probe Laser ◽  
Desorption Kinetics ◽  
Alloy Thin Film ◽  
Strong Temperature Dependence ◽  
Time Resolved ◽  
Kinetics Of

ABSTRACTThe kinetics of surface-limited thin film growth of SiGe alloys was investigated by time-resolved surface differential reflectometry. The source gas, mixtures of disilane and digermane in ratios from 1:1 to 6:1 in helium carrier gas, was delivered to a heated Si(001) substrate by a fast-acting pulsed molecular jet valve. The adsorption and desorption kinetics were determined from the surface differential reflectance signal obtained using a polarized, high-stability HeNe probe laser. Thin film growth was studied in the temperature range of 400–600°C on Si(001) substrates. Preferential incorporation of digermane into the film produces an alloy composition that depends upon but does not mirror the gas composition. For all gas mixtures, there is a strong temperature dependence of the rate at which the adsorption layer decomposes into film plus by-product. The kinetic data and the alloy compositions provide a basis for deducing some of the characteristics of the reaction sequence that leads to SiGe alloy thin film growth.

High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

scholarly journals The use of time resolved aerosol assisted chemical vapour deposition in mapping metal oxide thin film growth and fine tuning functional properties

2015 ◽  
Vol 3 (9) ◽  
pp. 4811-4819 ◽  
Author(s):  
Nicholas P. Chadwick ◽  
Sanjayan Sathasivam ◽  
Salem M. Bawaked ◽  
Mohamed Mokhtar ◽  
Shaeel A. Althabaiti ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Chemical Vapour ◽  
Thin Film Growth ◽  
Fine Tuning ◽  
Oxide Thin Film ◽  
Time Resolved ◽  
Use Of Time ◽  
Metal Oxide Thin Film ◽  
Changes Over Time

Time resolved analysis of a thin film has allowed, for the first time, analysis of how thin film growth occurs and changes over time by aerosol assisted CVD.

scholarly journals In Situ X-ray Measurements to Follow the Crystallization of BaTiO3 Thin Films during RF-Magnetron Sputter Deposition

2021 ◽  
Vol 11 (19) ◽  
pp. 8970
Author(s):  
Peter Walter ◽  
Markus Ilchen ◽  
JanTorben Roeh ◽  
Wiebke Ohm ◽  
Christian Bonar Zeuthen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Growth ◽  
Structural Evolution ◽  
Thin Film Growth ◽  
Structure Evolution ◽  
Special Focus ◽  
Time Resolved ◽  
X Ray

Here, we report on adding an important dimension to the fundamental understanding of the evolution of the thin film micro structure evolution. Thin films have gained broad attention in their applications for electro-optical devices, solar-cell technology, as well storage devices. Deep insights into fundamental functionalities can be realized via studying crystallization microstructure and formation processes of polycrystalline or epitaxial thin films. Besides the fundamental aspects, it is industrially important to minimize cost which intrinsically requires lower energy consumption at increasing performance which requires new approaches to thin film growth in general. Here, we present a state of the art sputtering technique that allows for time-resolved in situ studies of such thin film growth with a special focus on the crystallization via small angle scattering and X-ray diffraction. Focusing on the crystallization of the example material of BaTiO3, we demonstrate how a prototypical thin film forms and how detailed all phases of the structural evolution can be identified. The technique is shaped to enable a versatile approach for understanding and ultimately controlling a broad variety of growth processes, and more over it demonstrate how to in situ investigate the influence of single high temperature sputtering parameters on the film quality. It is shown that the whole evolution from nucleation, diffusion adsorption and grain growth to the crystallization can be observed during all stages of thin film growth as well as quantitatively as qualitatively. This can be used to optimize thin-film quality, efficiency and performance.

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