An oxygen-compatible radiant substrate heater for thin film growth at substrate temperatures up to 1050 °C

1997 ◽  
Vol 68 (6) ◽  
pp. 2538-2541 ◽  
Author(s):  
J. C. Clark ◽  
J. P. Maria ◽  
K. J. Hubbard ◽  
D. G. Schlom
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Substrate Temperatures

High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

Temperature-Dependent Evolution of Chemisorbed Digermane in Ge Thin Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Djula Eres ◽  
J. W. Sharp
Keyword(s):  
Thin Film ◽  
Active Sites ◽  
Film Growth ◽  
Hydrogen Desorption ◽  
Independent Study ◽  
Thin Film Growth ◽  
Time Resolved ◽  
Rate Limiting Step ◽  
Formation And Evolution ◽  
Substrate Temperatures

ABSTRACTThe formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time-resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth

Radical-triggered cross-linking for molecular layer deposition of SiAlCOH hybrid thin films

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Molecular Layer ◽  
Thin Film Growth ◽  
Cross Linking ◽  
Layer By Layer ◽  
Molecular Layer Deposition ◽  
Layer Deposition ◽  
Hybrid Thin Films ◽  
Enhanced Stability

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth
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