Surface Studies of Laser Processing of W on GaAs from WF6

1991 ◽  
Vol 236 ◽  
Author(s):  
M. Tabbal ◽  
A. Lecours ◽  
R. Izquierdo ◽  
M. Meunier ◽  
A. Yelon
Keyword(s):  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Process Window ◽  
Laser Chemical Vapor Deposition ◽  
Laser Illumination ◽  
Ion Laser ◽  
Spectroscopy Studies ◽  
Argon Ion

AbstractLaser Chemical Vapor Deposition of tungsten on GaAs from WF6 using a focused cw scanning argon-ion laser beam has been investigated. Lines have been produced using different mixtures of WF6:H2 and WF6:SiH4 and in some cases, without any reducing gas. Depositions are found to occur within a narrow process window, and are difficult to reproduce. In order to understand this process, we have performed surface analysis on GaAs samples exposed to WF6. X-Ray Photoelectron Spectroscopy studies on the interaction between WF6 and GaAs in the absence of laser illumination show that fluorinated tungsten compounds are present on the GaAs surface. Furthermore, the existence of a chemical reaction leading to the formation of GaF3 at the surface and to a loss of the stoichiometry of the substrate surface is detected. Possible mechanisms, and the effects of these reactions on the deposition process are discussed.

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

Selective Deposition of ZnS Thin Films by KrF Excimer Laser on Patterned Zn Seeds

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Yamane ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Chemical Vapor Deposition Method ◽  
Single Shot ◽  
Laser Chemical Vapor Deposition ◽  
Krf Laser ◽  
Krf Excimer Laser ◽  
Zns Films

AbstractThe patterned Zn nucleation and the ZnS growth onto the Zn seeds on a thermal oxidized silicon substrate was demonstrated at room temperature with the excimer laser chemical vapor deposition method.The formation of ZnS films was realized by the method based on the two—step process consisting of the nucleation and the subsequent ZnS growth. In the nucleation, a gaseous dimethylzinc was sealed in a reaction chamber and was then evacuated immediately. Then, the substrate surface which was uniformly adsorbed by dimethylzinc molecules was exposed with a single shot irradiation of a patterned KrF laser; Zn seeds were created only on the irradiated parts by a photodecomposition. And the subsequent growth of ZnS was performed by the parallel or perpendicular irradiation methods. As a result, in the perpendicular irradiation method, the high selectivity and crystallinity of the film were performed by irradiating the whole substrate surface with very low fluence of the KrF laser such as 3 mJ/cm2.

scholarly journals Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

2018 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Sean Barry ◽  
Henrik Pedersen
Keyword(s):  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Indium Nitride ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Deposition Process ◽  
Island Growth ◽  
Time Resolved ◽  
X Ray ◽  
Full Characterization

<p>A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-<i>N</i>,<i>N</i>-dimethyl-<i>N</i>’,<i>N</i>”-diisopropylguanidinatoindium(III) (<b>1</b>) and ammonia plasma at 200 °C. The deposition was self-limiting with respect to the pulse time of <b>1</b>, indicative of a surface-controlled deposition chemistry. The films were confirmed to be InN by X-ray photoelectron spectroscopy (XPS) and film thicknesses of 10 nm were measured by X-ray reflectivity (XRR), corresponding to a deposition rate of 0.1 nm/cycle. Grazing incidence X-ray diffraction (GIXRD) showed a hexagonal polycrystalline film with a preferred (002) orientation. Morphology studies suggest an island growth mode. The poor thermal stability of <b>1</b>, previously discussed in the literature, prevented full characterization of the deposition process and the deposition of thicker films. It is concluded that while <b>1</b> can act as an In precursor for InN, its poor thermal stability prevents its practical use. </p>

scholarly journals Deposition Study of Indium Trisguanidinate as a Possible Indium Nitride Precursor

2018 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Sean Barry ◽  
Henrik Pedersen
Keyword(s):  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Indium Nitride ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Deposition Process ◽  
Island Growth ◽  
Time Resolved ◽  
X Ray ◽  
Full Characterization

<p>A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-<i>N</i>,<i>N</i>-dimethyl-<i>N</i>’,<i>N</i>”-diisopropylguanidinatoindium(III) (<b>1</b>) and ammonia plasma at 200 °C. The deposition was self-limiting with respect to the pulse time of <b>1</b>, indicative of a surface-controlled deposition chemistry. The films were confirmed to be InN by X-ray photoelectron spectroscopy (XPS) and film thicknesses of 10 nm were measured by X-ray reflectivity (XRR), corresponding to a deposition rate of 0.1 nm/cycle. Grazing incidence X-ray diffraction (GIXRD) showed a hexagonal polycrystalline film with a preferred (002) orientation. Morphology studies suggest an island growth mode. The poor thermal stability of <b>1</b>, previously discussed in the literature, prevented full characterization of the deposition process and the deposition of thicker films. It is concluded that while <b>1</b> can act as an In precursor for InN, its poor thermal stability prevents its practical use. </p>

Parallel Bias-Enhanced Sulfur-Assisted Chemical Vapor Deposition of Nanocrystalline Diamond Films

2003 ◽  
Vol 775 ◽  
Author(s):  
Joel De Jesùs ◽  
Juan A. Gonzàlez ◽  
Oscar O. Ortiz ◽  
Brad R. Weiner ◽  
Gerardo Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Defect Density ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
X Ray ◽  
Positively Charged

AbstractThe transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, H2 and H2S. Bias voltages in the range of 0 – 800 VDC were applied parallel to the substrate surface continuously during deposition. The study revealed a significant improvement in the films' density and a lowering in the defect density of the nanocrystalline diamond structure for parallel bias (PB) voltages above 400V. These high PB conditions cause the preferential removal of electrons from the gaseous environment, thus leading to the net accumulation of positive species in the volume above the growing film, which enhances the secondary nucleation. The nanoscale carbon nuclei self-assemble into carbon nano-clusters with diameters in the range of tens of nanometers, which contain diamond (sp3-bonded C) in their cores and graphitic (sp2-bonded C) enclosures. Hence, the observed improvement in film density and in atomic arrangement appears to be connected to the enhanced presence of positively charged ionic species, consistent with models which propose that positively charged carbon species are the crucial precursors for CVD diamond film growth.

Rapid Photo-Thermal Chemical Vapor Deposition of Amorphous Carbon From Diiodomethane

1999 ◽  
Vol 593 ◽  
Author(s):  
M. Lindstam ◽  
M. Boman ◽  
K. Piglmayer
Keyword(s):  
Electron Microscopy ◽  
Amorphous Carbon ◽  
High Efficiency ◽  
Low Cost ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Material ◽  
Halogen Lamp ◽  
X Ray

ABSTRACTA novel approach to deposit amorphous carbon from the precursor CH2I2 at low cost and high efficiency is reported. The combination of thermal and quantum photo effects shows new interesting growth behaviour. The radiation of a halogen-lamp was used to heat the substrate material and to split photolytically the precursor molecules above the substrate surface. The deposition process was investigated as a function of lamp power, gas phase partial pressures and substrate materials. The films were analysed by Raman spectroscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray photon spectroscopy, transmission electron microscopy and atomic force microscopy.

THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS BY THE MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Deposition Process ◽  
Atomic Ratio ◽  
X Ray ◽  
Bonding Properties ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.

Controlling the Dimensions of Laser Chemical Vapor Deposited Metallurgy

1996 ◽  
Vol 118 (1) ◽  
pp. 7-10 ◽  
Author(s):  
L. Economikos ◽  
D. E. Kotecki ◽  
R. Surprenant
Keyword(s):  
Chemical Vapor ◽  
Element Model ◽  
Deposition Process ◽  
Multichip Modules ◽  
Laser Chemical Vapor Deposition ◽  
Micro Channels ◽  
Chemical Vapor Deposited ◽  
Deposited Metal ◽  
Scan Path ◽  
Circuit Density

The application of pyrolytic laser chemical vapor deposition (LCVD) to repair defects on multichip modules with a high circuit density requires tight control of the dimensions of the deposited metal. It is shown that by creating micro-channels into the substrate on both sides along the laser scan path, shorting to adjacent lines is eliminated and better control of deposited metal is achieved. A finite element model shows how the presence of the micro-channels reduces the temperature in the deposited material in the direction perpendicular to the laser scan, causing the deposition process to self-limit in this direction.

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