Mesotaxy Layers of IrSi3 in (111)Si Formed by MeV ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Short ◽  
Alice E. White ◽  
D. J. Eaglesham ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Dose Range ◽  
Rutherford Backscattering ◽  
Si Substrate ◽  
Rich Region ◽  
Main Layer ◽  
Transmission Electron

ABSTRACTIridium has been implanted at 1MeV and 500keV in the dose range 1 to 3×1017/cm2 at 525°C to form a buried Ir-rich region ∼ 2500Å below the surface in (111)Si. Samples were annealed at temperatures in the range 600°C to 1200°C to form buried IrSi3 layers. Rutherford backscattering and channeling analysis in conjunction with transmission electron microscopy were used to study the formation and the alignment of the IrSi3 layer to the silicon host as a function of annealing. For a dose of 2×1017 Ir/cm2, stoichiometric IrSi3 formed beneath ∼ 2000Å of Si after annealing to 1100°C. The IrSi3 layer was aligned with the Si substrate with Xmin ∼12%, but a band of precipitates remained either side of the main layer.

Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

1998 ◽  
Vol 540 ◽  
Author(s):  
N.A. Sobolev ◽  
U. Kaiser ◽  
I.I. Khodos ◽  
H. Presting ◽  
U. König
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Point Defects ◽  
Dose Range ◽  
Cross Sectional ◽  
Layer Interaction ◽  
Transmission Electron ◽  
The Cross ◽  
Electron Microdiffraction

AbstractThe damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
Erin C. Jones ◽  
Seongil Im ◽  
Nathan W. Cheung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Amorphous Region ◽  
Electrical Characteristics ◽  
Applied Bias ◽  
Rapid Thermal Anneal ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Si Wafer

ABSTRACTSub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4–6 keV and 2 keV, respectively. The amorphous region formed by SiF4 im-plantion is shown to be effective in slowing B diffusion during a 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrys-tallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

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