On the Thermoelectric Power in Ultrathin Films of A3IIB2V Semiconductors Under Magnetic Quantization

1991 ◽  
Vol 234 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Energy Spectrum ◽  
Film Thickness ◽  
Thermoelectric Power ◽  
Electron Concentration ◽  
Ultrathin Films ◽  
Surface Electron ◽  
Magnetic Quantization ◽  
Theoretical Results

ABSTRACTAn attempt is made to study the thermoelectric power in ultrathin films of semiconductors under magnetic quantization by including all types of aniso tropies in the energy spectrum within the domain of theory, and taking n-Cd3As2 as an example. It is found that, the magne to-thermopower decreases with increasing surface electron concentration and also changes in an oscillatory manner with film thickness respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

On the Thermoelectric Power in Quantum Dots of Non-Parabolic Semiconductors in Thr Presence of a Classically Large Field

1990 ◽  
Vol 198 ◽  
Author(s):  
Ktamkahya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S.N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Film Thickness ◽  
Thermoelectric Power ◽  
Experimental Observation ◽  
Electron Concentration ◽  
Large Field ◽  
Large Magnetic Field ◽  
Theoretical Results

ABSTRACTWe have studied the thermoelectric power in quantum dots (QDs) of non-parabolic semiconductors in the presence of a classically large magnetic field and we have taken A3N B2V, ternary chalcopyrite, II-VI and III-V semiconductors. It is found that the thermopower increases with increasing film thickness and decreasing electron concentration respectively in all the cases. The numerical values are greatest for Cd3As2 and least for InAs and the theoretical results are in ageement with the experimental observation as reported elsewhere.

Einstein Rzlation in Quantum Wires of Tetragonal Sediconduc Tors

1990 ◽  
Vol 198 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Energy Spectrum ◽  
Film Thickness ◽  
Electron Concentration ◽  
Energy Band ◽  
Quantum Wires ◽  
Electron Energy Spectrum ◽  
Einstein Relation ◽  
Degenerate Semiconductors ◽  
Dispersion Law ◽  
Theoretical Results

ABSTRACTWe have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Effect of Stress on the Carrier Contribution to Elastic Constants in Thin Films of Small Gap Compounds

1993 ◽  
Vol 308 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Sambhu Nath Biswas
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Experimental Method ◽  
Elastic Constants ◽  
Electron Concentration ◽  
Ultrathin Films ◽  
Theoretical Formulation ◽  
Lattice Matched

ABSTRACTIn this paper we have investigated the carrier contribution to elastic constants in very thin films of stressed small gap compounds within the domain of theory. It is found, taking stressed ultrathin films Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP as examples, that the elastic constants increase with increasing electron concentration and decreasing film thickness respectively in oscillatory manners. Besides the stress enhances the numerical values of such contribution to the elastic constants. In addition, the theoretical formulation is in agreement with the suggested experimental method of determining such constants in materials having arbitary dispersion laws.

On thon the Photoemission from Quantum Confined Strained III–V Systems

1995 ◽  
Vol 379 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. Nag ◽  
G. Mazumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Dispersion Law ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

On The Photoemission From Quantum Confined Compound Semiconductors

1991 ◽  
Vol 228 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Compound Semiconductors ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper, we have studied the photoemission from quantum wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-type semiconductors, on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p formalism. It is found, taking n-Cd3 As2 as an example, that the photoemission increases with increasing photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing electron concentration and with film thickness, for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

On The Field Fmisiicn Fwom HgTe-CdTe Superlarrices with Graded Struijctures Under Magnetic Quantization

1989 ◽  
Vol 161 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Sambjij N Biswas
Keyword(s):  
Magnetic Field ◽  
Experimental Observation ◽  
Field Emission ◽  
Electron Concentration ◽  
Current Density ◽  
Graded Structure ◽  
Magnetic Quantization ◽  
Theoretical Results

ABSTRACTIn this paper, we studied the magneto-field emission from HgTe/Cdre superlattices with graded structure and compared the same with the bulk specimens of the constituent materials. It is found that the field emitted current density increases both with electron concentration and magnetic field in an oscillatory manner. The field emission in HgTe/CdTe SLi is greater than that of the same from constituent materials the theoretical results are in agreement with the experimental observation as reported elsewhere.

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

1990 ◽  
Vol 181 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Optoelectronic Materials ◽  
Large Magnetic Field ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

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