Magneto-Optical Enhancement of Tbfeco/Al Films at Short Wavelength

1991 ◽  
Vol 231 ◽  
Author(s):  
Kibong Song ◽  
Hiroshi Ito ◽  
Masahiko Naoe

AbstractThe bilayered films composed of magneto-optical(MO) amorphous Tb-Fe-Co alloy and reflective Al layers were deposited successively on glass slide substrates without plasma exposure by using the facing targets sputtering system. The specimen films with the thickness of MO layer tMO below 5 nm showed apparent perpendicular magnetic anisotropy constant Ku of 2 to 3×106 erg/cm3 and rectangular Kerr loop. The specimen film with tMO of 14 nm took the Kerr rotation angle θk as large as about 0.36 degree, at the wavelength λ as short as about 400 nm. These values of θK is considerably larger than those of the bilayered films in the conventional MO media. Normally, the bilayered films with tMO above 50 nm took θK of about 0.25 degree at θK of 400 nm.

1988 ◽  
Vol 132 ◽  
Author(s):  
H. Ito ◽  
T. Hirata ◽  
M. Naoe

ABSTRACTThe microstructure of TbFeCo amorphous films deposited by a facing targets type of sputtering (FTS) method varied with the change of deposition rate Rd. The films deposited at Rd of about 100–200 nm/min did not present any distinguishable columnar structure while the ones at Rd of about 50 nm/min revealed obvious columnar structure. The films with columnless structure exhibited Kerr rotation angle θk of 0.37 deg. of which the value was higher than that of the films with columnar structure over the wide range of Th content. The torque measurement implied that the presence of columnar structure was not mainly necessary for the occurrence of large perpendicular magnetic anisotropy. Under satisfactory confinement of plasma during sputtering, the dense, uniform and columnless TbFeCo films can be obtained on plasma-free substrate even at Rd as high as 200 nm/min, without destroying the excellent magnetic properties and magneto-optical characteristics.


1986 ◽  
Vol 80 ◽  
Author(s):  
Fred E. Luborsky

AbstractThis paper reviews the history of the development of films for use in magneto-optic recording. A discussion of why these early attempts with films of MnBi and Europium compounds were abandoned is given. The current work on amorphous transition metal-rare earth alloys is then reviewed. The origins of the necessary perpendicular magnetic anisotropy are discussed. The ideal combination of properties desired are: a high room temperature coercivity, a large temperature coefficient of coercivity, a large perpendicular anisotropy constant, large Ms, thermal and environmental stability, and, depending on whether a reflection or absorption mode of operation will be used, a large Kerr rotation with large reflectivity or a large Faraday rotation with a small specific absorption. These factors, their control, bow they influence the recording performance and the limits on performance of these amorphous films are discussed.


2004 ◽  
Vol 834 ◽  
Author(s):  
Hojun Ryu ◽  
Dongwoo Suh ◽  
Yongwoo Park ◽  
Eunkyung Kim ◽  
Yonggoo Yoo ◽  
...  

ABSTRACTThe Si3N4/FePt/Si3N4/Al/Si structures have been fabricated. 57 nm silicon nitride films have been used as dielectric layer for heat dissipation and 500 nm Al film used for reflection layer. The Kerr rotation angle was changed with the FePt layer thickness. At the 65 % Pt composition in 10 nm FePt layer, the maximum Kerr rotation angle was 0.82°. As increase with FePt thickness the Kerr angle is slightly decreased. The change of Kerr rotation angle and the thermal behavior of multilayered structure according to FePt thickness variation were also calculated by computer simulation.


1984 ◽  
Vol 20 (5) ◽  
pp. 1027-1029 ◽  
Author(s):  
H. Tsujimoto ◽  
K. Saiki ◽  
S. Inokuchi ◽  
Y. Sakurai

1997 ◽  
Vol 475 ◽  
Author(s):  
Yong-Jin Song ◽  
Byung-Il Lee ◽  
Seung-Ki Joo

ABSTRACT[Cu(20Å)/NiFe(7Å)/Ni(6Å)/NiFe(7Å)]10Cu(50Å) multilayers were deposited on 4 ° tilt-cut Si(lll) using 3-gun rf magnetron sputtering system. An in-plane uniaxial magnetic anisotropy was found and the uniaxial magnetic anisotropy constant was about 3×104 erg/cm3. The multilayers on non tilt-cut Si(lll) with Cu underlayer did not show any anisotropy. The crystal structure of the multilayer on 4 ° tilt-cut Si(111) was studied using TEM work and the magnetic anisotropy is originated from the growth of (110) preferred orientation of the multilayer. When other material such as Ni or NiFe was used as an underlayer for the multilayer, the magnetic anisotropy disappeared and the crystal structure was (111). The multilayer without underlayer did not show any magnetic anisotropy either. It is thought that Cu underlayer was grown with (110) orientation on 4 ° tilt-cut Si(111) through the ledges in Si wafer and worked as a template for the growth of the multilayer.


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