Magnetic Anisotropy of Crystalline Defects

1991 ◽  
Vol 231 ◽  
Author(s):  
B.M. Clemens ◽  
R.L. White ◽  
W.D. Nix ◽  
J.A. Bain
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Strain Field ◽  
Coherency Strain ◽  
Misfit Dislocations ◽  
Surface Anisotropy ◽  
Crystalline Defects ◽  
Preferred Direction ◽  
Coherency Strains

AbstractWe consider the anisotropies due to coherency strains and the inilioliogcliotis stratlus associated with misfit dislocations, both of which give rise to anisotropy through maguctostrictive coupling. Coherency strains can give rise to anl apparent surface anisotrnpy due to the decrease in coherency strain with the film thickness. This anisotropy is comparable in magnitude to that observed experimentally for Fe [110] epitaxial thiut films on W [110]. The strain field associated with misfit dislocations produces a. surface anisotropy which is also comparable in magnitude to experimentally observed anisotropies. Dislocatioms along the inplane [001] and [110] directions both produce the same preferred direction of maguctization orientation.

Misfit Strain Relief Beyond the Critical Thickness Using Curvature Measurements and in Situ Characterization of the Magneto-Optic Kerr Effect

1994 ◽  
Vol 356 ◽  
Author(s):  
H. E. Inglefield ◽  
G. Bochi ◽  
C. A. Ballentine ◽  
R. C. O’Handley ◽  
C. V. Thompson
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Kerr Effect ◽  
Critical Thickness ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Magneto Optic

AbstractEpitaxial misfit has been characterized in Ni/Cu/Si (100) as a function of Ni film thickness using wafer curvature measurements. This strain can be related to measurements of magnetic anisotropy made in the deposition system using the magneto-optic Kerr effect. Films were deposited using molecular beam epitaxy (MBE) with varying Ni epilayer thickness between 10 and 1000Å. The change in wafer curvature due to misfit strain was measured using optical interferometry and the strain was calculated using Stoney’s equation. Transmission electron microscopy was used to characterize misfit dislocations at the Ni/Cu interface. It has been determined that misfit strain can have a very strong effect on magnetic anisotropy, particularly in the regime between the critical thickness and complete misfit accommodation, where strain has been found to decrease significantly as a function of film thickness. A critical strain has been determined at which a transition in the direction of magnetization easy axis from perpendicular to the film to in the film plane occurs. This discovery allows the use of Kerr effect measurements to characterize misfit strain in situ.

scholarly journals Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Roxana-Alina One ◽  
Hélène Béa ◽  
Sever Mican ◽  
Marius Joldos ◽  
Pedro Brandão Veiga ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Random Access ◽  
Low Power Consumption ◽  
Surface Anisotropy ◽  
Magnetization Dynamics ◽  
Storage Density ◽  
Switching Regime ◽  
Major Interest ◽  
Out Of Plane

AbstractThe voltage controlled magnetic anisotropy (VCMA) becomes a subject of major interest for spintronics due to its promising potential outcome: fast magnetization manipulation in magnetoresistive random access memories with enhanced storage density and very low power consumption. Using a macrospin approach, we carried out a thorough analysis of the role of the VCMA on the magnetization dynamics of nanostructures with out-of-plane magnetic anisotropy. Diagrams of the magnetization switching have been computed depending on the material and experiment parameters (surface anisotropy, Gilbert damping, duration/amplitude of electric and magnetic field pulses) thus allowing predictive sets of parameters for optimum switching experiments. Two characteristic times of the trajectory of the magnetization were analyzed analytically and numerically setting a lower limit for the duration of the pulses. An interesting switching regime has been identified where the precessional reversal of magnetization does not depend on the voltage pulse duration. This represents a promising path for the magnetization control by VCMA with enhanced versatility.

scholarly journals Strain-induced perpendicular magnetic anisotropy and Gilbert damping of Tm3Fe5O12 thin films

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Oana Ciubotariu ◽  
Anna Semisalova ◽  
Kilian Lenz ◽  
Manfred Albrecht
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Tensile Strain ◽  
Easy Axis ◽  
Perpendicular Magnetic Anisotropy ◽  
Gilbert Damping ◽  
Sample Plane ◽  
Iron Garnets ◽  
Out Of Plane ◽  
Magnetic Easy Axis

AbstractIn the attempt of implementing iron garnets with perpendicular magnetic anisotropy (PMA) in spintronics, the attention turned towards strain-grown iron garnets. One candidate is Tm3Fe5O12 (TmIG) which possesses an out-of-plane magnetic easy axis when grown under tensile strain. In this study, the effect of film thickness on the structural and magnetic properties of TmIG films including magnetic anisotropy, saturation magnetization, and Gilbert damping is investigated. TmIG films with thicknesses between 20 and 300 nm are epitaxially grown by pulsed laser deposition on substituted-Gd3Ga5O12(111) substrates. Structural characterization shows that films thinner than 200 nm show in-plane tensile strain, thus exhibiting PMA due to strain-induced magnetoelastic anisotropy. However, with increasing film thickness a relaxation of the unit cell is observed resulting in the rotation of the magnetic easy axis towards the sample plane due to the dominant shape anisotropy. Furthermore, the Gilbert damping parameter is found to be in the range of 0.02 ± 0.005.

scholarly journals Strain-induced perpendicular magnetic anisotropy inLa2CoMnO6−ɛthin films and its dependence on film thickness

2016 ◽  
Vol 93 (14) ◽  
Author(s):  
Regina Galceran ◽  
Laura López-Mir ◽  
Bernat Bozzo ◽  
José Cisneros-Fernández ◽  
José Santiso ◽  
...  
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy

Effect of stress sign and film thickness on interface nucleation of misfit dislocations in strained multilayers

1994 ◽  
Vol 75 (10) ◽  
pp. 4990-4993 ◽  
Author(s):  
Hyo‐Hoon Park ◽  
Ji Beom Yoo ◽  
Dae Kon Oh ◽  
Jeong Soo Kim ◽  
Jeong Yong Lee
Keyword(s):  
Film Thickness ◽  
Misfit Dislocations

Dislocation Behaviour in GexSi1-x Epilayers on (001)Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Eric P. Kvam ◽  
D.M. Maher ◽  
C.J. Humphreys
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Critical Thickness ◽  
Three Dimensional ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Island Growth ◽  
Edge Type ◽  
Dislocation Behaviour ◽  
Step Mechanism

AbstractWe have observed that the nature of misfit dislocations introduced near the critical thickness in GexSi1-x alloys on (001)Si changes markedly in the region 0.4 ≤ x ≤ 0.5. At or below the lower end of this compositional range, the observed microstructure is comprised almost entirely of 60° type dislocations, while at the high end, the dislocation structure is almost entirely Lomer edge type. Concurrent with this change, the dislocation density at the top of the epilayer varies by a factor of about 60X. Similarly, several other observables (e.g. dislocation length and spacing) also change appreciably.Part of the reason for the morphological variation seems to be a change in the source for dislocation introduction, in conjunction with a change in glide behaviour of dislocations as a function of film thickness. Evidence will be presented that indicates strain, as well as thickness, has a critical value for some dislocation introduction mechanisms, and that these together determine the resulting microstructure.Furthermore, it appears unlikely that the edge-type Lomer dislocations which appear at about x = 0.5 are either introduced directly, by climb, or grown in, as in the three-dimensional island growth and coalescence which occurs when x approaches unity. Instead, a two-step mechanism involving glissile dislocations is proposed and discussed.

A TEM study of microstructures of YBa2Cu3O7−x thin films deposited on LaAlO3 by laser ablation

1991 ◽  
Vol 6 (9) ◽  
pp. 1823-1828 ◽  
Author(s):  
S.N. Basu ◽  
A.H. Carim ◽  
T.E. Mitchell
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Film Thickness ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Misfit Dislocations ◽  
High Angle ◽  
Interfacial Structures ◽  
High Degree ◽  
Periodic Spacing

The microstructures of YBa2Cu3O7−x thin films deposited by laser ablation on single crystal (001) LaAlO3 substrates have been investigated. The orientation of the YBa2Cu3O7−x layer next to the interface is found to be completely c-perpendicular, with a high degree of epitaxy between the film and the substrate. Misfit dislocations, with a periodic spacing of around 13 nm, are present at the interface. Two distinct interfacial structures are seen in these films. At a film thickness of around 400 nm, nucleation of c-parallel grains occurs, leading to a switchover from a c, and, and-perpendicular to a c-parallel microstructure. Amorphous particulates, ejected from the target during processing, lead to the formation of misoriented grains, giving rise to high-angle grain boundaries in the film.

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