A Continuous Heterogeneous Model for the Crystalline to Amorphous Transition in Ion Implanted Semiconductors : Relationship to the “Critical Damage Energy Density” Model

1991 ◽  
Vol 230 ◽  
Author(s):  
C. Vieu ◽  
A. Claverie ◽  
J. Faure ◽  
J. Beauvillain
Keyword(s):  
Energy Density ◽  
Damage Accumulation ◽  
Density Model ◽  
High Dose ◽  
Heterogeneous Model ◽  
New Approach ◽  
Critical Damage ◽  
Ion Implanted

AbstractA method is presented for calculating amorphization doses of ion implanted semiconductors, based on a continuous heterogeneous description of damage accumulation. This new approach is compared to the classical “critical damage energy density” (CDED) model. For high dose implantations the equivalence of both descriptions is formally established. It is proposed that the main limitation of the CDED model lies in the linear additivity of damage rather than the homogeneous damage build-up.

Temperature Dependence of the Kinetics of Silicon Amorphization by He Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laânab ◽  
A. Roumili ◽  
M. M. Faye ◽  
N. Gessinn ◽  
A. Claverie
Keyword(s):  
Energy Density ◽  
Ion Implantation ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Drastic Change ◽  
Density Model ◽  
Different Types ◽  
Higher Temperature ◽  
Kinetics Of ◽  
Critical Damage

ABSTRACTWe have studied by XTEM the kinetics of Si amorphization by light ion implantation (He) as a function of substrate temperature. The analysis of these kinetics has been performed within the framework of the “Critical Damage Energy Density” model which is shown to apply for temperatures up to 250 K. There is a drastic change in the efficiency of the amorphization process at about 175 K. These results are discussed and explained by considering the different types of defects (I, V, I2, V2, complexes…) that can be stabilized in c-Si depending on the temperature. Above 150 K, the amorphization proceeds through the accumulation of interstitials and vacancies while at higher temperature it proceeds through the accumulation of di-interstitials and di-vacancies left in the network after annihilation and recombination of the Frenkel pairs created by the bombardment.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

1983 ◽  
Vol 27 ◽  
Author(s):  
J.S. Williams ◽  
D.J. Chivers ◽  
R.G. Elliman ◽  
S.T. Johnson ◽  
E.M. Lawson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strong Evidence ◽  
Heavy Ion ◽  
High Dose ◽  
Porous Structures ◽  
Structural Modifications ◽  
Gaas Substrates ◽  
Ion Implanted

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

A new approach for high-dose measurement using CR-39 track detector

2020 ◽  
Vol 325 (3) ◽  
pp. 765-771
Author(s):  
G. S. Sahoo ◽  
S. P. Tripathy ◽  
Rahul Roy ◽  
D. S. Joshi ◽  
M. S. Kulkarni
Keyword(s):  
Track Detector ◽  
High Dose ◽  
Dose Measurement ◽  
New Approach

Structural characterization of high-dose C++N+ ion-implanted (111) Si

2001 ◽  
Vol 184 (3) ◽  
pp. 361-370 ◽  
Author(s):  
L. Barbadillo ◽  
M.J. Hernández ◽  
M. Cervera ◽  
P. Rodrı́guez ◽  
J. Piqueras ◽  
...  
Keyword(s):  
Structural Characterization ◽  
High Dose ◽  
Ion Implanted
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