Annealing of High Dose Implanted GaAs with Halogen Lamps

1983 ◽  
Vol 23 ◽  
Author(s):  
Y.I. Nissim ◽  
B. Joukoff ◽  
J. Sapriel ◽  
P. Henoc
Keyword(s):  
Raman Scattering ◽  
Raman Spectra ◽  
Quartz Plate ◽  
Gaas Surface ◽  
High Dose ◽  
Surface Degradation ◽  
Surface Protection ◽  
Scattering Measurements ◽  
Halogen Lamps

ABSTRACTHalogen lamps are used to anneal implanted GaAs. Surface protection is obtained by mouting the substrate in a sandwiched configuration between a silicon and a quartz plate. Raman scattering measurements are carried out to follow simultaneously lattice reconstruction and surface degradation due to Arsenic loss. The evolution of the Raman spectra is compared to a T.E.M. analysis carried out on the same samples.

Raman Scattering and Superconductivity of Alkali-Fullerene Materials

1992 ◽  
Vol 270 ◽  
Author(s):  
J. S. Lannin ◽  
M. G. Mitch ◽  
W. Bacsa ◽  
S. J. Chase
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Solid Solutions ◽  
Thick Films ◽  
Ultrathin Film ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Scattering Measurements ◽  
Different Thickness

ABSTRACTRaman scattering measurements in alkali—fullerene alloys in ultrathin and thin films provide evidence for variations in electron—phonon coupling. For x — 3similar behavior of Rb3 C60 films of different thickness support substantial electron—phonon induced damping of specific Hg(i) modes derived from intramolecular modes of C60. In 400A thick films a reduction of induced scattering from Raman inactive C60 modes substantiates the importance ofHg(2), but not Hg(3) modes for phonon—mediated superconductivity. In contrast to RbxC60 and KxC60 ultrathin film solid solutions, similar Raman spectra for NaxC60 indicate substantially reduced coupling consistent with the absence of superconductivity in this system.

Raman Scattering Spectroscopy of GeSi/Si Strained Layer Superlattice

1993 ◽  
Vol 298 ◽  
Author(s):  
Zhang Rong ◽  
Zheng Youdou ◽  
Gu Shulin ◽  
Hu Liqun
Keyword(s):  
Raman Scattering ◽  
Frequency Shift ◽  
Raman Spectra ◽  
Strain Distribution ◽  
Phonon Frequency ◽  
New Method ◽  
Raman Scattering Spectroscopy ◽  
Scattering Measurements ◽  
Optic Phonon ◽  
Strained Layer Superlattice

AbstractRaman scattering measurements have been carried out on Si1-xGex/Si SLS. It is found that the Ge–Ge optic phonon frequency shift is proportional to strain in the SiGe film, and the Ge–Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.

Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy

1988 ◽  
Vol 131 ◽  
Author(s):  
R. Löckerath ◽  
H. J. Koss ◽  
P. Tommack ◽  
W. Richter ◽  
P. Balk
Keyword(s):  
Thermal Decomposition ◽  
Raman Scattering ◽  
Vapor Phase ◽  
Gaas Surface ◽  
Organometallic Vapor Phase Epitaxy ◽  
Experimental Conditions ◽  
Group V ◽  
Scattering Measurements ◽  
Trimethyl Gallium ◽  
Anti Stokes

ABSTRACTThe thermal decomposition of AsH3 and TMG is measured insitu under different experimental conditions. Simultaneously the production of H2, CH4 and C2H6 is observed. The data indicate a situation where AsH3 is only partially decomposed at the GaAs surface. The hydrogen released removes additional CH3 groups from the trimethyl-gallium (TMG) molecule, enhances the decomposition of TMG, and thereby forms methane.

ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-247-C5-251 ◽  
Author(s):  
Y. I. Nissim ◽  
B. Joukoff ◽  
J. Sapriel ◽  
N. Duhamel
Keyword(s):  
High Dose ◽  
Halogen Lamps

Raman scattering measurements of vibrational and rotational distributions in expanding nitrogen

1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN
Keyword(s):  
Raman Scattering ◽  
Scattering Measurements

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

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