Polyimide and FEP charging behavior under multienergetic electron-beam irradiation: Experiments and a simple model

2011 ◽  
Author(s):  
P. Molinie ◽  
R. Hanna ◽  
T. Paulmier ◽  
B. Dirassen ◽  
P. Dessante ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Recrystallization of Polycrystalline Silicon Over SiO2 through Strip Electron Beam Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
Y. Hayafuji ◽  
T. Yanada ◽  
H. Hayashi ◽  
K. E. Williams ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Polycrystalline Silicon ◽  
Electron Beam Irradiation ◽  
Crystalline Silicon ◽  
Growth Direction ◽  
Crystal Quality ◽  
Beam Irradiation ◽  
Growth Interface ◽  
Substrate Orientation

ABSTRACTWe have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2; film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a [211] direction provides better crystal quality than growth in a [011] direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed

High Current Density Electron Beam Induced Desorption

1988 ◽  
Vol 129 ◽  
Author(s):  
S.D. Berger ◽  
J.M. Macaulay ◽  
L.M. Brown ◽  
R.M. Allen
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Current Density ◽  
Electron Beam Irradiation ◽  
High Current Density ◽  
Inorganic Materials ◽  
High Current ◽  
Beam Irradiation ◽  
Hole Formation ◽  
Small Probe

ABSTRACTHigh current density electron beam irradiation with a small probe can lead to the production of holes in a variety of inorganic materials. We review some of the experimental observations of the hole formation process and compare these to the predictions of a simple model.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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