Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Wagner ◽  
G. Contreras ◽  
A. Compaan ◽  
M. Cardona ◽  
A. Axmann
Keyword(s):  
Ion Implantation ◽  
Diagnostic Tool ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Solubility Limit ◽  
Equilibrium Solubility ◽  
Photoluminescence Study ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

ABSTRACTIt has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

scholarly journals Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing

2012 ◽  
Vol 5 (9) ◽  
pp. 093007 ◽  
Author(s):  
Shengqiang Zhou ◽  
Yutian Wang ◽  
Zenan Jiang ◽  
Eugen Weschke ◽  
Manfred Helm
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

1988 ◽  
Author(s):  
Andrzej Rys ◽  
Tim Chin ◽  
Alvin Compaan ◽  
Ajit Bhat
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing

Vacuum ◽  
2020 ◽  
Vol 178 ◽  
pp. 109434 ◽  
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
Irina N. Parkhomenko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Pulsed Laser Annealing

Effect of High Repetition Pulsed Laser Annealing on Optical Properties of Phosphorus Ion-Implanted ZnO Nanorods

2013 ◽  
Vol 699 ◽  
pp. 383-386
Author(s):  
Tetsuya Shimogaki ◽  
Taihei Ofuji ◽  
Norihiro Tetsuyama ◽  
Kota Okazaki ◽  
Mitsuhiro Higashihata ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Repetition Rate ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Pulsed Laser ◽  
High Repetition ◽  
Pulsed Laser Annealing ◽  
Krf Excimer Laser ◽  
Ion Implanted

We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.

Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing

1982 ◽  
Vol 21 (Part 2, No. 5) ◽  
pp. L245-L247 ◽  
Author(s):  
Kazuo Itoh ◽  
Yoshisato Sasaki ◽  
Tomokuni Mitsuishi ◽  
Masanobu Miyao ◽  
Masao Tamura
Keyword(s):  
Ion Implantation ◽  
Thermal Behavior ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Anomalous defect drift induced in semiconductor crystals at ion implantation and pulsed laser annealing

1988 ◽  
Vol 129 (3) ◽  
pp. 180-184 ◽  
Author(s):  
T.A. Kuzemchenko ◽  
A.A. Manenkov ◽  
G.N. Mikhailova ◽  
S.Yu. Sokolov
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Semiconductor Crystals ◽  
Pulsed Laser Annealing
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