Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

1988 ◽  
Author(s):  
Andrzej Rys ◽  
Tim Chin ◽  
Alvin Compaan ◽  
Ajit Bhat
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

Resistivity reduction in heavily doped polycrystalline silicon using cw‐laser and pulsed‐laser annealing

1981 ◽  
Vol 52 (5) ◽  
pp. 3625-3632 ◽  
Author(s):  
T. Shibata ◽  
K. F. Lee ◽  
J. F. Gibbons ◽  
T. J. Magee ◽  
J. Peng ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Cw Laser ◽  
Heavily Doped

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Wagner ◽  
G. Contreras ◽  
A. Compaan ◽  
M. Cardona ◽  
A. Axmann
Keyword(s):  
Ion Implantation ◽  
Diagnostic Tool ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Solubility Limit ◽  
Equilibrium Solubility ◽  
Photoluminescence Study ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

ABSTRACTIt has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

Photoluminescence and Bandgap Narrowing in Heavily Doped n-GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
H.D. Yao ◽  
A. Compaan
Keyword(s):  
Carrier Concentration ◽  
Conduction Band ◽  
Fermi Energy ◽  
Laser Annealing ◽  
Functional Form ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Bandgap Narrowing ◽  
Heavily Doped ◽  
Very High

AbstractExtremely heavily doped n-GaAs was produced by pulsed-laser annealing of Si implanted GaAs, achieving carrier concentrations exceeding 3.2×1019/cm3. Our photoluminescence (PL) spectra indicate a bandgap narrowing due to heavy n-type doping with a functional form of Δεg(eV) = - 6.3 × 10cm-8[(cm-2)]1/3 . At the highest carrier concentration, the bandgap shrinkage reaches -200 meV and the electron Fermi energy is -410 meV. These large values indicate that there exists a considerable conduction band “stretch” between the Γ and L-valley of GaAs for very high n-type concentrations.

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water

2017 ◽  
Author(s):  
K. Takahashi ◽  
M. Kurosawa ◽  
H. Ikenoue ◽  
M. Sakashita ◽  
O. Nakatsuka ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

Dopant behavior in heavily doped polycrystalline Ge1−xSnxlayers prepared with pulsed laser annealing in water

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FJ02
Author(s):  
Kouta Takahashi ◽  
Masashi Kurosawa ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted
Sign in / Sign up

Export Citation Format

Share Document