The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions

1991 ◽  
Vol 228 ◽  
Author(s):  
W. I. Wang
Keyword(s):  
Compound Semiconductors ◽  
Type Conductivity ◽  
Wide Gap ◽  
P Type ◽  
First Time

ABSTRACTWide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous explanation as to why ZnSe can be easily doped n-type while undoped ZnTe only exhibits p-type conductivity. In this paper we propose an explanation based on the III-V/II-VI analogy which for the first time can explain these phenomena, and provide solutions to the problem of doping II-VI compound semiconductors.

scholarly journals Электрофизические и фотолюминесцентные исследования сверхрешeток \LT-GaAs/GaAs : Si\, выращенных методом молекулярно-лучевой эпитаксии на подложках GaAs с ориентацией (100) и (111)А

2019 ◽  
Vol 53 (2) ◽  
pp. 258
Author(s):  
Г.Б. Галиев ◽  
Е.А. Климов ◽  
А.Н. Клочков ◽  
В.Б. Копылов ◽  
C.C. Пушкарев
Keyword(s):  
Growth Temperature ◽  
Hole Concentration ◽  
Charge Carriers ◽  
Photoluminescence Spectra ◽  
Type Conductivity ◽  
Semiconductor Structures ◽  
Higher Temperature ◽  
P Type ◽  
First Time ◽  
Lt Gaas

AbstractThe results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p -type conductivity upon doping with Si, are presented. The structures are {LT-GaAs/GaAs:Si} superlattices, in which the LT-GaAs layers are grown at a low temperature (in the range 280–350°C) and the GaAs:Si layers at a higher temperature (470°C). The p -type conductivity upon doping with Si is provided by the use of GaAs(111)A substrates and the choice of the growth temperature and the ratio between As_4 and Ga fluxes. The hole concentration steadily decreases, as the growth temperature of LT-GaAs layers is lowered from 350 to 280°C, which is attributed to an increase in the roughness of interfaces between layers and to the formation of regions depleted of charge carriers at the interfaces between the GaAs:Si and LT-GaAS layers. The evolution of the photoluminescence spectra at 77 K under variations in the growth temperature of LT-GaAs is interpreted as a result of changes in the concentration of Ga_As and V _Ga point defects and Si_Ga– V _Ga, V _As–Si_As, and Si_As–Si_Ga complexes.

Recent Developments in Doping Techniques for Compound Semiconductors

1993 ◽  
Vol 325 ◽  
Author(s):  
J. E. Cunningham ◽  
W. T. Tsang
Keyword(s):  
Activation Energy ◽  
Hole Concentration ◽  
Compound Semiconductors ◽  
Solubility Limit ◽  
Band Offset ◽  
New Methods ◽  
In Doping ◽  
Recent Developments ◽  
P Type ◽  
First Time

AbstractWe report new methods to dope compound semiconductors. First, we demonstrate the concept of doping engineering whereby it becomes possible to tailor the activation energy of the dopant in a host semiconductor for the first time. In this application, the band offset of a thin, sacrificial semiconductor is used to lower the activation energy of the dopant below its value in the host semiconductor. This allows the freedom to control dopant activity in ways not accessible to a uniformly placed dopant. We chose δ-Be-AlGaAs/GaAs as a model example and show the hole binding energy is reduced by a factor of five. Secondly, we demonstrate overcoming the p-type solubility limit in GaAs by use of monolayer δ-Be in a GaAs base of an HBT. Here, an effective hole concentration of > 1021cm−3 is measured in real devices. We present a qualatative view of doping solubility limitations that are controlled by surface processes.

Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films

2003 ◽  
Vol 82 (7) ◽  
pp. 1048-1050 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Type Conductivity ◽  
Wide Gap ◽  
P Type

Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

2021 ◽  
Vol 118 (11) ◽  
pp. 112102
Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Step Process ◽  
Type Conductivity ◽  
P Type

scholarly journals Effect of Mn2+ substitution on the structure, properties and HER activity of cadmium phosphochlorides

RSC Advances ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 5134-5145
Author(s):  
Anand Roy ◽  
Anjali Singh ◽  
S. Assa Aravindh ◽  
Swaraj Servottam ◽  
Umesh V. Waghmare ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Structure Properties

Mn2+ prefers the Cd-sites having larger number of tightly bounded Cl-ligands. Pure Cd7P4Cl6 exhibits n-type conductivity whereas Cd5.8Mn1.2P4Cl6 exhibits p-type conductivity. The HER activity of Cd7−yMnyP4Cl6 is superior to that of pristine Cd7P4Cl6.

p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

2010 ◽  
Vol 97 (15) ◽  
pp. 153126 ◽  
Author(s):  
G. D. Yuan ◽  
T. W. Ng ◽  
Y. B. Zhou ◽  
F. Wang ◽  
W. J. Zhang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Silicon Nanowires ◽  
Type Conductivity ◽  
Interface Charge ◽  
P Type ◽  
Interface Charge Transfer

Preparation and Properties of CdTe Films on Mo/Glass Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vello Valdna ◽  
Maarja Grossberg ◽  
Hiie Jaan ◽  
Urve Kallavus ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Cadmium Chloride ◽  
Radiation Detectors ◽  
Cdte Film ◽  
Chloride Flux ◽  
Type Conductivity ◽  
Coated Glass ◽  
Glass Substrates ◽  
Group I ◽  
Cdte Films ◽  
P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

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