Quest for Compact Blue Lasers for Optical Memories

1991 ◽  
Vol 228 ◽  
Author(s):  
R. N. Bhargava

ABSTRACTA short wavelength laser offers unique opportunities in high density optical recording as well as in laser printing. To achieve a compact blue laser, the current effort worldwide is primarily concentrated on achieving well-conducting p-type ZnSe and fabricating quantum well heterostructures so as to achieve a low threshold laser at room temperature. The recent milestone ‘an injection blue laser below room temperature’ gives us confidence that indeed we are on the right path. In photopumped lasers in various II-VI heterostructures, thresholds at room temperature comparable to the theoretical limit have been reported. This not only reinforces that indeed a room temperature injection laser is possible but when combined with earlier electron-beam pumped laser results, a scanned compact laser is also feasible.In recent years several breakthroughs have demonstrated that an infrared emitting GaAs laser can be used to generate blue light through efficient second harmonic generation (SHG) in certain non-linear optical materials. Recent exciting results on SHG of GaAs lasers in KTP grating waveguides resulted in a blue laser with output power in the range of several milliwatts. Alternative schemes such as upconversion lasers and SHG in III-V quantum wells structures are presented.In summary, various efforts to achieve compact blue lasers and their availability in the near future are presented.

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  

1996 ◽  
Vol 32 (24) ◽  
pp. 2279 ◽  
Author(s):  
A.N. Baranov ◽  
Y. Cuminal ◽  
G. Boissier ◽  
C. Alibert ◽  
A. Joullié

1995 ◽  
Vol 93 (11) ◽  
pp. 903-907 ◽  
Author(s):  
Z. Xu ◽  
P.M. Fauchet ◽  
C.W. Rella ◽  
B.A. Richman ◽  
H.A. Schwettman ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
W. Xie ◽  
D.C. Grillo ◽  
M. Kobayashi ◽  
R. L. Gunshor ◽  
H. Jeon ◽  
...  

ABSTRACTStriking progress in the development of II-VI semiconductor heterostructures, coupled with seminal advances in doping, has very recently led to the first demonstration of blue and blue/green diode lasers operating from cryogenic to room temperature. The active region in these devices was based on the (Zn, Cd)Se/ZnSe multiple quantum wells (MQW) which had earlier been actively studied as a candidate for laser medium by optical pumping techniques. We report on the performance of such MQW diode lasers with emphasis on structural versatility in terms of preparation on both p-type and n-type GaAs substrates, and where sulfur is or is not incorporated for blue/green color lasing. In this work we have obtained pulsed, high power, high quantum efficiency laser emission up to near room temperature conditions. Efficient LED devices are described which operate in the blue (494nm) at room temperature.


1993 ◽  
Vol 127 (1-4) ◽  
pp. 1083-1087 ◽  
Author(s):  
S. Fukatsu ◽  
N. Usami ◽  
Y. Shiraki ◽  
A. Nishida ◽  
K. Nakagawa

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.


1994 ◽  
Author(s):  
Zhiwei Xu ◽  
Jury V. Vandyshev ◽  
Gary W. Wicks ◽  
Philippe M. Fauchet ◽  
Mike J. Shaw ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Helm ◽  
P. Kruck ◽  
T. Fromherz ◽  
M. Seto ◽  
G. Bauer ◽  
...  

ABSTRACTA survey is given about the potential use of Si/SiGe heterostructures for applications in the mid-infrared spectral range. We discuss theoretical foundations and experiments of intersubband absorption in p-type Si/SiGe quantum wells and show that due to the complex valence-band structure, normal-incidence absorption can be observed. On the basis of these quantum wells, mid-infrared detectors were fabricated and characterized in terms of responsivity, dark current and detectivity. In asymmetric, compositionally stepped quantum wells second harmonic generation of CO2 laser radiation has been demonstrated.


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