The Mbe Growth of Widegap II-VI Injection Lasers and LEDs

1992 ◽  
Vol 242 ◽  
Author(s):  
W. Xie ◽  
D.C. Grillo ◽  
M. Kobayashi ◽  
R. L. Gunshor ◽  
H. Jeon ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Laser Medium ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Mbe Growth ◽  
In Doping ◽  
P Type

ABSTRACTStriking progress in the development of II-VI semiconductor heterostructures, coupled with seminal advances in doping, has very recently led to the first demonstration of blue and blue/green diode lasers operating from cryogenic to room temperature. The active region in these devices was based on the (Zn, Cd)Se/ZnSe multiple quantum wells (MQW) which had earlier been actively studied as a candidate for laser medium by optical pumping techniques. We report on the performance of such MQW diode lasers with emphasis on structural versatility in terms of preparation on both p-type and n-type GaAs substrates, and where sulfur is or is not incorporated for blue/green color lasing. In this work we have obtained pulsed, high power, high quantum efficiency laser emission up to near room temperature conditions. Efficient LED devices are described which operate in the blue (494nm) at room temperature.

Observation of electroluminescence above room temperature in strained p-type Si0.65Ge0.35/Si(111) multiple quantum wells

1993 ◽  
Vol 127 (1-4) ◽  
pp. 1083-1087 ◽  
Author(s):  
S. Fukatsu ◽  
N. Usami ◽  
Y. Shiraki ◽  
A. Nishida ◽  
K. Nakagawa
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

High-Temperature W Diode Lasers Emitting at 3.3µm

1999 ◽  
Vol 607 ◽  
Author(s):  
L. J. Olafsen ◽  
W. W. Bewley ◽  
I. Vurgaftman ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Type Ii ◽  
Operating Characteristics ◽  
Current Densities ◽  
Cladding Layers

AbstractW lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pumping. However, the development of electrically pumped mid-infrared lasers has not yet reached the same level of performance. This is largely related to the more challenging task of simultaneously optimizing the doping/transport and gain/optical properties of the devices. Here we report a demonstration of type-II mid-IR diode lasers employing W active quantum wells. Laser structures with 5 or 10 active periods sandwiched between broadened-waveguide separate confinement regions and quaternary optical cladding layers were processed into 100-µm-wide stripes, cleaved into 1-mm-long cavities, and mounted junction side down. For 0.5-1 µs pulses at a repetition rate of 200 Hz, lasing was obtained up to a maximum operating temperature of 310 K, where the emission wavelength was 3.27 µm. The threshold current densities were 110 A/cm2and 25 kA/cm2 at 78 and 310 K, respectively. The characteristic temperature, To, was 48 K for temperatures between 100 and 280 K. Operation in cw mode was obtained to 195 K, with threshold current densities of 63 A/cm2and 1.4 kA/cm2at 78 and 195 K, respectively, with To = 38 K between 78 and 195 K. Significant further improvements in the operating characteristics are expected once the optimization of the designs and fabrication procedures is complete.

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 3 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. Kovalev ◽  
F. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Tunnel Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Low Probability

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

scholarly journals Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates

2000 ◽  
Vol 77 (7) ◽  
pp. 975 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
H. D. Sun ◽  
Y. Segawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched ◽  
Room Temperature Luminescence
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