Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum Wells

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Hertle ◽  
G. Schuberth ◽  
E. Gornik ◽  
G. Abscreiter ◽  
F. Schäffler

ABSTRACTThe intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed [1]. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. Self consistent subband calculations are in good agreement with the experimental values.

2009 ◽  
Vol 79 (8) ◽  
Author(s):  
G. Ciasca ◽  
M. De Seta ◽  
G. Capellini ◽  
F. Evangelisti ◽  
M. Ortolani ◽  
...  

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.


1989 ◽  
Vol 54 (21) ◽  
pp. 2145-2147 ◽  
Author(s):  
B. C. Covington ◽  
C. C. Lee ◽  
B. H. Hu ◽  
H. F. Taylor ◽  
D. C. Streit

2016 ◽  
Vol 108 (5) ◽  
pp. 052102 ◽  
Author(s):  
Teruhisa Kotani ◽  
Munetaka Arita ◽  
Katsuyuki Hoshino ◽  
Yasuhiko Arakawa

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