Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

Teruhisa Kotani; Munetaka Arita; Katsuyuki Hoshino; Yasuhiko Arakawa

doi:10.1063/1.4941088

Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

Applied Physics Letters ◽

10.1063/1.4941088 ◽

2016 ◽

Vol 108 (5) ◽

pp. 052102 ◽

Cited By ~ 21

Author(s):

Teruhisa Kotani ◽

Munetaka Arita ◽

Katsuyuki Hoshino ◽

Yasuhiko Arakawa

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Mid Infrared ◽

Intersubband Absorption

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Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

Applied Physics Letters ◽

10.1063/1.4905212 ◽

2014 ◽

Vol 105 (26) ◽

pp. 261108 ◽

Cited By ~ 26

Author(s):

Teruhisa Kotani ◽

Munetaka Arita ◽

Yasuhiko Arakawa

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Mid Infrared ◽

Intersubband Absorption

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Sharp intersubband absorption spectra in AlGaN/GaN multiple quantum wells

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088) ◽

10.1109/cleo.2000.906966 ◽

2000 ◽

Author(s):

K. Hoshino ◽

T. Someya ◽

M. Helm ◽

K. Hirakawa ◽

Y. Arakawa

Keyword(s):

Quantum Wells ◽

Absorption Spectra ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Absorption

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Temperature Dependence and Reflection of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells

physica status solidi (b) ◽

10.1002/1521-3951(200111)228:1<85::aid-pssb85>3.0.co;2-s ◽

2001 ◽

Vol 228 (1) ◽

pp. 85-89 ◽

Cited By ~ 2

Author(s):

�. �zg�r ◽

C.-W. Lee ◽

H.O. Everitt

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Acoustic Phonons ◽

Coherent Acoustic Phonons

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Broadband mid-infrared supercontinuum generation in three-level multiple quantum wells using short optical pulses

Optics & Laser Technology ◽

10.1016/j.optlastec.2019.105684 ◽

2019 ◽

Vol 120 ◽

pp. 105684

Author(s):

Nitu Borgohain ◽

S. Konar

Keyword(s):

Quantum Wells ◽

Supercontinuum Generation ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Optical Pulses ◽

Mid Infrared

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Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes

Applied Physics Letters ◽

10.1063/1.2824886 ◽

2008 ◽

Vol 92 (1) ◽

pp. 011920 ◽

Cited By ~ 73

Author(s):

Masashi Kubota ◽

Kuniyoshi Okamoto ◽

Taketoshi Tanaka ◽

Hiroaki Ohta

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Laser Diodes ◽

Blue Laser ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Temperature dependence of exciton localization in ZnO/Zn1−xMgxO multiple quantum wells with different barrier compositions

Optics Communications ◽

10.1016/j.optcom.2013.12.045 ◽

2014 ◽

Vol 318 ◽

pp. 37-40 ◽

Cited By ~ 7

Author(s):

H.H. Zhang ◽

X.H. Pan ◽

H.P. He ◽

W. Chen ◽

J.Y. Huang ◽

...

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Exciton Localization

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Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells

Physical Review B ◽

10.1103/physrevb.79.085302 ◽

2009 ◽

Vol 79 (8) ◽

Cited By ~ 9

Author(s):

G. Ciasca ◽

M. De Seta ◽

G. Capellini ◽

F. Evangelisti ◽

M. Ortolani ◽

...

Keyword(s):

Quantum Wells ◽

Conduction Band ◽

Band Alignment ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Absorption

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Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

Surface Science ◽

10.1016/0039-6028(86)90409-7 ◽

1986 ◽

Vol 174 (1-3) ◽

pp. 206-210 ◽

Cited By ~ 22

Author(s):

O.J. Glembocki ◽

B.V. Shanabrook ◽

W.T. Beard

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs

Journal of Applied Physics ◽

10.1063/1.366098 ◽

1997 ◽

Vol 82 (5) ◽

pp. 2611-2616 ◽

Cited By ~ 26

Author(s):

R. Pässler ◽

G. Oelgart

Keyword(s):

Quantum Wells ◽

Temperature Dependence ◽

Analytical Description ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Exciton Peak

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Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-379-115 ◽

1995 ◽

Vol 379 ◽

Author(s):

K. Rammohan ◽

D.H. Rich ◽

A. Larsson

Keyword(s):

Activation Energy ◽

Quantum Wells ◽

Temperature Dependence ◽

Spatial Variations ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Misfit Dislocations ◽

Nonradiative Recombination ◽

Intensity Dependence ◽

Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

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