Measurement of Valence Band Offset in Strained GexSi1−x/Si Heterojunctions

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Khorram ◽  
C. H. Chern ◽  
K. L. Wang
Keyword(s):  
Valence Band ◽  
Theoretical Calculations ◽  
Thick Layer ◽  
Electrical Measurement ◽  
Band Offset ◽  
Electrical Measurements ◽  
Temperature Growth ◽  
Heterostruc Ture ◽  
Valence Band Discontinuity ◽  
Good Agreement

ABSTRACTThe valence band discontinuity ΔEV in the coherently strained GexSi1−x/Si heterostruc-ture is determined using I-V-T measurement. The electrical measurements of the band discontinuity of the pseudomorphic layers are difficult due to the thin layer imposed by the strain. Recently, low temperature growth of thick layer (>100 nm) of coherently strained GexSi1−x on Si has been achieved and thus made it possible for an accurate electrical measurement of band offset. The results obtained are in good agreement with the theoretical calculations by pseudopotential method.

HETEROJUNCTION BAND DISCONTINUITY CHANGE BY ULTRATHIN INTRALAYER: Na

1993 ◽  
Vol 07 (07) ◽  
pp. 459-464 ◽  
Author(s):  
SHIHONG XU ◽  
XIANMING LIU ◽  
MAOSHENG MA ◽  
JINGSHENG ZHU ◽  
YUHENG ZHANG ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Discontinuity

The changes of band offset of Ge-GaAs(100) heterojunction are observed by means of an ultrathin Na intralayer with the photoemission spectroscopy. 1 ML Na intralayer increases the valence-band discontinuity of Ge-GaAs by 0.19 eV on the average.

Interface Strain and the Valence Band Offset at the Lattice Matched In0.53Ga0.47As/InP (001) Interface

1989 ◽  
Vol 159 ◽  
Author(s):  
Mark S. Hybertsen
Keyword(s):  
Valence Band ◽  
Minimum Energy ◽  
Energy Structure ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Interface Strain ◽  
Interface Bond ◽  
Lattice Matched ◽  
Good Agreement

ABSTRACTTotal energy minimization calculations show that the interface bonds are strained in nominally lattice matched In0.53 Ga0.47As/InP (001) heterostructures, in agreement with recent X-ray measurements. Anion intermixing relieves the interface strain. The calculated valence band offset varies with the interface bond lengths so the minimum energy structure must be used for a given composition. Then the calculated offset is independent of composition and is in good agreement with experiment. A simple model exhibits the qualitative features revealed by these calculations.

Conduction and Valence Band Offsets at the Hydrogenated Amorphous Silicon-Carbon/Crystalline Silicon Interface Via Capacitance Techniques

1993 ◽  
Vol 297 ◽  
Author(s):  
John M. Essick ◽  
Richard T. Mather ◽  
Murray S. Bennett ◽  
James Newton
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Valence Band ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thick Layer ◽  
Band Offset ◽  
Band Offsets ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Heterostructure Schottky diode samples each composed of a sub-micron thick layer of intrinsic hydrogenated amorphous silicon-carbon (a-Si1−xCx:H) deposited on an n-type crystalline silicon (c-Si) substrate are used to measure the a-Si1−xCx:H/c-Si band offsets via junction capacitance techniques. The samples range in carbon concentration from x=0.0−0.3. First, a thermally activated capacitance step due to the response of defects at the amorphous/crystalline interface is evident in capacitance vs. temperature spectra taken on all these samples. The bias-dependence of this step’s activation energy provides a direct measure of the a-Si1−xCx:H/c-Si interface potential as a function of c-Si depletion width in each sample. By application of Poisson’s equation, we find that the a-Si1−xCx:H/c-Si conduction band offset ΔEc. increases from 0.00 to 0.10 eV as x increases from 0.00 to 0.26. Second, while under reverse-bias at low temperature, we optically pulsed each sample with c-Si band-gap light to create trapped holes at the a-Si1−xCx:H/c-Si valence band offset ΔEV. By noting the threshold for the subsequent optical release of these trapped holes by sub-band gap light, we found that ΔEV increases from 0.67 to ≥0.83 eV as x increases from 0.00 to 0.26.

Temperature-Dependent Infrared Absorption of Hg-Based II-VI Semiconductor Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
Z. Yang ◽  
Y. Lansari ◽  
J. W. Han ◽  
Z. Yu ◽  
J. F. Schetzina
Keyword(s):  
Optical Absorption ◽  
Valence Band ◽  
Infrared Absorption ◽  
Spectral Region ◽  
Theoretical Calculations ◽  
Band Offset ◽  
Temperature Dependent ◽  
Valence Band Offset ◽  
Transition Energies ◽  
A Value

ABSTRACTThe optical absorption of a series of HgTe/Cd0.85 Hg0. 15 Te superlattices (SLs) have been measured in the spectral region from 2 to 12 µm at temperatures from 300 K down to 4.2 K. Several subband transitions were identified and their transition energies were compared with theoretical calculations, with the valence band offset δEv between HgTe and CdTe as a fitting parameter. It is found that at a given temperature, a value of δEv = 420 ± 100 meV fits the results of all the SLs, and δEv does not depend on temperature to within ±100 meV.

Theoretical and experimental research on slip and uplift of the timber-concrete composite beam

BioResources ◽  
2020 ◽  
Vol 15 (3) ◽  
pp. 7079-7099
Author(s):  
Jianying Chen ◽  
Guojing He ◽  
Xiaodong (Alice) Wang ◽  
Jiejun Wang ◽  
Jin Yi ◽  
...  
Keyword(s):  
Differential Equations ◽  
Deformation Theory ◽  
Concrete Slab ◽  
Theoretical Calculations ◽  
Structural Element ◽  
Structural Efficiency ◽  
Theoretical Investigations ◽  
New Type ◽  
Interlayer Slip ◽  
Good Agreement

Timber-concrete composite beams are a new type of structural element that is environmentally friendly. The structural efficiency of this kind of beam highly depends on the stiffness of the interlayer connection. The structural efficiency of the composite was evaluated by experimental and theoretical investigations performed on the relative horizontal slip and vertical uplift along the interlayer between composite’s timber and concrete slab. Differential equations were established based on a theoretical analysis of combination effects of interlayer slip and vertical uplift, by using deformation theory of elastics. Subsequently, the differential equations were solved and the magnitude of uplift force at the interlayer was obtained. It was concluded that the theoretical calculations were in good agreement with the results of experimentation.

Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures

1996 ◽  
Vol 54 (4) ◽  
pp. 2718-2722 ◽  
Author(s):  
L. Wang ◽  
S. Sivananthan ◽  
R. Sporken ◽  
R. Caudano
Keyword(s):  
Valence Band ◽  
Interface Properties ◽  
Valence Band Discontinuity

scholarly journals Etude par résonance magnétique nucléaire de composés organiques contenant des chalcogènes. II. L'éther de diphényle et ses analogues soufré, sélénié et telluré

1979 ◽  
Vol 57 (22) ◽  
pp. 2967-2970 ◽  
Author(s):  
Gabriel Llabrès ◽  
Marcel Baiwir ◽  
Léon Christiaens ◽  
Jean-Louis Piette
Keyword(s):  
Crystal Structure ◽  
Theoretical Calculations ◽  
Heavy Atom ◽  
Mesomeric Effect ◽  
Heavy Atom Effect ◽  
Inductive Effects ◽  
Structure Determinations ◽  
Résonance Magnétique ◽  
Atom Effect ◽  
Good Agreement

The 1Hmr study of the title compounds has revealed a screw conformation, with defined interconversion processes, in good agreement with crystal structure determinations and theoretical calculations. The mesomeric effect of the heteroatom is smaller than in the anisole series, due to steric inhibitions.The 13Cmr enhances, to some extent, these conclusions. In the case of Te compounds, a heavy atom effect adds to the classical mesomeric and inductive effects to account for the experimental observations.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

Reaktionskinetik des Energietransportes zwischen Rekombinationszentren von Elektroluminophoren

1965 ◽  
Vol 20 (12) ◽  
pp. 1648-1654 ◽  
Author(s):  
I. Broser ◽  
H.-E. Gumlich ◽  
R. Moser
Keyword(s):  
Valence Band ◽  
Luminescence Quenching ◽  
Iron Group ◽  
Field Frequency ◽  
Kinetics Of ◽  
Good Agreement

The kinetics of holes in electroluminescence has been calculated by means of simple two- and three-level-models. As a result an equation is given which describes the ratio of intensity of different emission bands and the degree of luminescence quenching by iron group elements as a function of field frequency and temperature. The calculated curves are in good agreement with the values observed in ZnS containing Cu, Mn, Fe, Co, Ni respectively. The kinetics has been used to calculate the energetic separation of acceptor levels from the valence band and other constants.

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