Hydrogen Stability in Hydrogenated Amorphous Silicon-Based Alloys

1991 ◽  
Vol 219 ◽  
Author(s):  
W. Beyer ◽  
J. Herion ◽  
H. Wagner ◽  
U. Zastrow
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Film Structure ◽  
Desorption Energy ◽  
Germanium Content ◽  
Surface Desorption ◽  
Silicon Based ◽  
Hydrogenated Amorphous ◽  
Thermal Stability Of ◽  
Hydrogen Effusion

ABSTRACTThe thermal stability of hydrogen in amorphous silicon-based alloy films was studied by deuterium/hydrogen interdiffusion and hydrogen effusion experiments. Depending on the film structure, hydrogen stability is limited by hydrogen surface desorption or hydrogen diffusion. The hydrogen surface desorption energy is found to decrease with rising germanium content and to increase with rising nitrogen and carbon content. At T = 400°C, hydrogen diffusion is found to proceed in the germanium subnetwork for a-SiGe alloys and in the silicon subnetwork for a-SiN and a-SiC alloys.

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Role of Hydrogen Microstructure in Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
Sufi Zafar ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Unified Description

ABSTRACTA model for correlating the observed properties of hydrogenated amorphous silicon (a-Si:H) with the underlying hydrogen microstructure is reviewed. The model provides a unified description of defect equilibration, hydrogen evolution, rehydrogenation and hydrogen diffusion measurements.

scholarly journals Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes

RSC Advances ◽  
2017 ◽  
Vol 7 (31) ◽  
pp. 19189-19196 ◽  
Author(s):  
Z. Marvi ◽  
S. Xu ◽  
G. Foroutan ◽  
K. Ostrikov ◽  
I. Levchenko
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Film Structure ◽  
Multiscale Modelling ◽  
Structure And Properties ◽  
Growth Processes ◽  
Chemical Mechanisms ◽  
Physical And Chemical ◽  
Hydrogenated Amorphous

Physical and chemical mechanisms and role of plasma in the synthesis of hydrogenated amorphous silicon were studied numerically to reveal the key growth processes and, hence, to ensure a higher level of control over the film structure and properties.

Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Masanori Otobe ◽  
Shunri Oda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Nucleation And Growth ◽  
Growth Processes ◽  
Plan View ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Hydrogenated Amorphous

ABSTRACTWe have investigated nucleation and growth mechanism of nanocrystalline silicon (nc-Si) based on the experimental observation of plan-view transmission electron microscopy. Nanocrystalline Si has been prepared by hydrogen radical annealing of hydrogenated amorphous silicon (a-Si:H) layer, which is deposited on hydrogen radical treated a-Si:H buffer layer. Nanocrystallization depends critically upon hydrogen radical annealing time and the thickness ofa-Si:H layer. Hydrogen radicals play important roles in both nucleation and growth processes in a different way. Growth of nc-Si can be explained by “hydrogen diffusion model”, in which hydrogen radicals diffusing through a-Si:H layer to interface cause nanocrystallization. Our results imply that nuclei for nc-Si are generated at the interface between a-Si:H and under layer when treated by hydrogen radicals.

Thermal equilibration in hydrogenated amorphous silicon-based films

1989 ◽  
Vol 114 ◽  
pp. 648-650 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Equilibration ◽  
Silicon Based ◽  
Hydrogenated Amorphous

CORRELATION BETWEEN Er3+ EMISSION AND THE MICROSTRUCTURE OF A-SiOx:H FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4246-4249 ◽  
Author(s):  
C. Y. CHEN ◽  
W. D. CHEN ◽  
S. F. SONG ◽  
C. C. HSU
Keyword(s):  
Amorphous Silicon ◽  
Strong Influence ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Suboxide ◽  
Two Phases ◽  
Hydrogenated Amorphous ◽  
Intrinsic Emission ◽  
Hydrogen Effusion

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide ( a - SiO X : H 〈 Er 〉( x <2.0)) films was measured. Two luminescence bands with maxima at λ ≅ 750 nm and λ ≅ 1.54μ m, ascribed to the a - SiO x : H intrinsic emission and Er 3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000°C. Micro-Raman results indicate that the a - SiO x : H < Er > films are a mixture of two phases, an amorphous SiO x matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a - SiO x : H < Er > films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er 3+ emission. Our study emphasizes the role of a-Si domains on Er 3+ emission in a - SiO x : H < Er > films.

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