Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
Jin Jang ◽  
Tae Gon Kim ◽  
Song Ok Koh ◽  
Hyon Kyun Song ◽  
Kyu Chang Park ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Layers ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Hydrogen Radical ◽  
Hydrogen Radicals

ABSTRACTWe studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.

Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique

2010 ◽  
Vol 247 (7) ◽  
pp. 1653-1657 ◽  
Author(s):  
Tomasz A. Krajewski ◽  
Krzysztof Dybko ◽  
Grzegorz Luka ◽  
Lukasz Wachnicki ◽  
Bartlomiej S. Witkowski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Electrical And Optical Properties ◽  
Oxide Layers ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Jung Mok Jun ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Kyung Ha Lee ◽  
Mi Kyung Chu ◽  
...  
Keyword(s):  
Etch Rate ◽  
Hydrogen Plasma ◽  
Annealing Effect ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Hydrogen Radical ◽  
Etching Effect

AbstractWe have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.

scholarly journals Layered Si–Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD

RSC Advances ◽  
2021 ◽  
Vol 11 (56) ◽  
pp. 35099-35109
Author(s):  
Boaz Kalderon ◽  
Debabrata Sarkar ◽  
Krushnamurty Killi ◽  
Tamuz Danzig ◽  
Doron Azulay ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Layer By Layer ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Layered Oxide ◽  
Layer Deposition ◽  
Electrical Conductivities

Layer-by-layer deposition of Si–Ti layered oxide thin films are obtained using catalytic tandem M/ALD methodology. The films exhibit optical (RI) and electrical conductivities by selecting the MLD to ALD proportion in the super cycle.

Tannic acid anchored layer-by-layer covalent deposition of parasin I peptide for antifouling and antimicrobial coatings

RSC Advances ◽  
2016 ◽  
Vol 6 (18) ◽  
pp. 14809-14818 ◽  
Author(s):  
Gang Xu ◽  
Dicky Pranantyo ◽  
Bin Zhang ◽  
Liqun Xu ◽  
Koon-Gee Neoh ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Schiff Base ◽  
Tannic Acid ◽  
Michael Addition ◽  
Steel Surface ◽  
Stainless Steel Surface ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Antimicrobial Coatings ◽  
Layer Deposition

Tannic acid and parasin I were deposited alternatively on stainless steel surface by Michael addition/Schiff base reaction-enabled layer-by-layer deposition technique.

The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation

2007 ◽  
Vol 131-133 ◽  
pp. 225-232 ◽  
Author(s):  
R. Jones
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Electrical Activity ◽  
Theoretical Work ◽  
Precipitation Process ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Electrical And Optical Properties ◽  
Oxygen Precipitation ◽  
Oxygen Atoms

Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.

Electrical and Optical Properties of ZnO Processed by Atomic Layer Deposition in Inverted Polymer Solar Cells

2010 ◽  
Vol 114 (48) ◽  
pp. 20713-20718 ◽  
Author(s):  
Hyeunseok Cheun ◽  
Canek Fuentes-Hernandez ◽  
Yinhua Zhou ◽  
William J. Potscavage ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Polymer Solar Cells ◽  
Atomic Layer ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Inverted Polymer Solar Cells
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