Role of Sio at TCO/P Interface on the Electrical Properties of the P/I Junction

1991 ◽  
Vol 219 ◽  
Author(s):  
C. Carvalho ◽  
J. M. M. De Nijs ◽  
R. Martins ◽  
L. Guimarāes
Keyword(s):  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Vapour Deposition ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Chemical Vapour ◽  
Silicon Monoxide ◽  
Short Circuit Current ◽  
Short Circuit Current Density

ABSTRACTThe reduction of the ITO (Indium Tin Oxide) by the deposition of an a-Si:C:H p layer by means of a Plasma Enhanced Chemical Vapour Deposition (PECVD), is considerably diminished if a thin silicon monoxide layer (estimated to be between 5–50Å thick) is applied as a diffusion barrier. The amount of reduced indium diminishes (its concentration is two times lower), while the amount of silicon oxide is less although silicon monoxide was added on purpose. The influence of the silicon monoxide layer on the electrical properties of the p/i junction is shown by its J-V characteristics (in the dark and under illumination). We can see that with a suitable silicon monoxide thickness we can improve the short circuit current density (Jsc) and the rectifying ratio.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

The role of the buffer gas in the ArF laser chemical vapour deposition of silicon oxide

1993 ◽  
Vol 230 (1) ◽  
pp. 35-38 ◽  
Author(s):  
P. González ◽  
J. Pou ◽  
D. Fernández ◽  
E. García ◽  
J. Serra ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Buffer Gas ◽  
Arf Laser

Plasmon-Enhanced Cell Efficiency in Hybrid Solar Cell Based on CdS Nanorod and Poly (3-Hexythiophene)

2013 ◽  
Vol 774-776 ◽  
pp. 753-756
Author(s):  
Xin Mei Liu ◽  
Feng Ming Fu ◽  
Wei Min Guo
Keyword(s):  
Solar Cell ◽  
Silver Nanoparticle ◽  
Indium Tin Oxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Hybrid Solar Cell ◽  
Thin Layers ◽  
Semiconductor Surface ◽  
Cds Nanorods

A bulk-heterjunction hybrid solar cell based on CdS nanorods as electron acceptor and conjugated polymers P3HT (Poly (3-Hexylthiophene)) as donor was fabricated through solution processing. Plasmon-active silver nanoparticle layers were introduced in the hybrid solar cell. Silver nanoparticle layers were fabricated using thermal evaporation deposition of 10 nm of silver thin layers on indium tin oxide (ITO) substrate followed by annealing. Under the surface plasmon excitation in Ag nanoparticles deposited on a semiconductor surface, increasing optical electrical field inside the photoactive layer led to an increased short circuit current density (Jsc) and improved fill factor (FF) of the cell. Consequently, under AM1.5G illumination (100 mW.cm-2), the plasmon-decorated cell based on CdS-nanorods/P3HT showed a four-times increase of the power conversion efficiency (PCE) compared with the undecorated one.

Controlled Fabrication of the CdS Nanocrystals Films and its Application in Hybrid Solar Cells

2013 ◽  
Vol 742 ◽  
pp. 139-142
Author(s):  
Wei Wei He ◽  
Hui Min Jia ◽  
Yan Lei
Keyword(s):  
Indium Tin Oxide ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Glass Substrates ◽  
Cds Nanocrystals ◽  
Ito Glass ◽  
One Step ◽  
Cds Film

In this paper, we fabricated the CdS nanocrystals film on indium-tin oxide (ITO) glass substrates through one-step solvothermal treatment of cadmium nanocrystals layer and sulfur powder in the presence of absolute ethanol. And then we spin-coated a poly (3-hexylthiophene) (P3HT) layer in the CdS film, and finally evaporated an Au electrode through a shadow mask. The resulting products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM). A photovoltaic performance measurement of the fabricated device (ITO/CdS:P3HT/Au) shows a short circuit current density (Jsc) of 0.82 mA cm2, and a power conversion efficiency (η) of 0.03% under an illumination of 100 mW/cm2.

Employing μc-SiOX:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells

2013 ◽  
Vol 1536 ◽  
pp. 33-38
Author(s):  
S.W. Liang ◽  
C.H. Hsu ◽  
Y.W. Tseng ◽  
Y.P. Lin ◽  
C.C. Tsai
Keyword(s):  
High Efficiency ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Wavelength Region ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Long Wavelength ◽  
Type Layer

ABSTRACTThe n-type hydrogenated microcrystalline silicon oxide (μc-SiOX:H(n)) films with different stoichiometry have been successfully prepared by varying the CO2-to-SiH4 flow ratio in the PECVD system. By using the μc-SiOX:H(n) as a replacement for μc-Si:H(n) and ITO, the conversion efficiency of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem cells were improved to 6.35% and 10.15%, respectively. The major improvement of the short circuit current density (JSC) and these cell efficiencies were originated from the increased optical absorption, which was confirmed by the quantum efficiency measurement showing increased response in the long-wavelength region. Moreover, the all PECVD process except the metal contact simplified the fabrication and might benefit the industrial production.

scholarly journals Effects of Hole-Collecting Buffer Layers and Electrodes on the Performance of Flexible Plastic Organic Photovoltaics

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Sungho Woo ◽  
Hong-Kun Lyu ◽  
Yoon Soo Han ◽  
Youngkyoo Kim
Keyword(s):  
Indium Tin Oxide ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Large Area

Here we report the influences of the sheet resistance (Rsheet) of a hole-collecting electrode (indium tin oxide, ITO) and the conductivity of a hole-collecting buffer layer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) on the device performance of flexible plastic organic photovoltaic (OPV) devices. The series resistance (RS) of OPV devices steeply increases with increasingRsheetof the ITO electrode, which leads to a significant decrease of short-circuit current density (JSC) and fill factor (FF) and power conversion efficiency, while the open-circuit voltage (VOC) was almost constant. By applying high-conductivity PEDOT:PSS, the efficiency of OPV devices with highRsheetvalues of 160 Ω/□ and 510 Ω/□ is greatly improved, by a factor of 3.5 and 6.5, respectively. These results indicate that the conductivities of ITO and PEDOT:PSS will become more important to consider for manufacturing large-area flexible plastic OPV modules.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiOx:H doped layers

2014 ◽  
Vol 92 (7/8) ◽  
pp. 913-916 ◽  
Author(s):  
V. Smirnov ◽  
A. Lambertz ◽  
F. Finger
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Improved Performance ◽  
Conversion Efficiencies ◽  
Insight Into

We present the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) in semitransparent bifacial microcrystalline silicon (μc-Si:H) solar cells. Semitransparent bifacial solar cells are of interest for a number of technical applications like building integration or concentrator devices, but also can offer new insight into solar cell properties due to the possibility to illuminate the cell from both sides. Appropriately selected μc-SiOx:H n-layers with low refractive index and high optical band gap allow the reduction of the reflection of the cells and improve short circuit current density (JSC) and conversion efficiencies. The quality of n-type μc-SiOx:H window layers is demonstrated in solar cells with highly reflective ZnO/Ag contacts. High JSC values of 24.8 mA/cm2 and efficiencies of 9.5% are obtained for 1 μm thick solar cells.

scholarly journals High efficient organic solar cell utilizing mixture of solution-processable phthalocyanine and fullerene derivative with processing additive solvent

2020 ◽  
Vol 36 (1) ◽  
Author(s):  
Quang-Duy Dao
Keyword(s):  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Fullerene Derivative ◽  
Photoluminescence Spectra ◽  
High Efficient

We demonstrate relatively high efficient bulk heterojunction (BHJ) organic solar cells (OSCs) utilizing a phthalocyanine derivative, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), and a fullerene derivative, 1-(3-methoxy-carbonyl)-propyl-1-1-phenyl-(6,6)C71 and the role of processing additive solvent on improvement of the fabricated BHJ OSCs. By adding processing additive solvent, filling factor and short-circuit current density are improved to 0.57 and 8.6 mA/cm2, respectively. As a result, the power conversion efficiency of 3.6% is achieved. Furthermore, the effects of processing additive solvent are demonstrated by taking the absorption and photoluminescence spectra of C6PcH2 and composite thin films into account.

scholarly journals Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells

RSC Advances ◽  
2019 ◽  
Vol 9 (40) ◽  
pp. 23261-23266 ◽  
Author(s):  
HyunJung Park ◽  
Soohyun Bae ◽  
Se Jin Park ◽  
Ji Yeon Hyun ◽  
Chang Hyun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Silicon Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

The efficiency of silicon solar cell with poly-Si/SiOx passivating contact was improved by etching of poly-Si which improves short circuit current density without affecting passivation quality and fill factor.

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