Employing μc-SiOX:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells

2013 ◽  
Vol 1536 ◽  
pp. 33-38
Author(s):  
S.W. Liang ◽  
C.H. Hsu ◽  
Y.W. Tseng ◽  
Y.P. Lin ◽  
C.C. Tsai
Keyword(s):  
High Efficiency ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Wavelength Region ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Long Wavelength ◽  
Type Layer

ABSTRACTThe n-type hydrogenated microcrystalline silicon oxide (μc-SiOX:H(n)) films with different stoichiometry have been successfully prepared by varying the CO2-to-SiH4 flow ratio in the PECVD system. By using the μc-SiOX:H(n) as a replacement for μc-Si:H(n) and ITO, the conversion efficiency of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem cells were improved to 6.35% and 10.15%, respectively. The major improvement of the short circuit current density (JSC) and these cell efficiencies were originated from the increased optical absorption, which was confirmed by the quantum efficiency measurement showing increased response in the long-wavelength region. Moreover, the all PECVD process except the metal contact simplified the fabrication and might benefit the industrial production.

Light-induced Open-circuit Voltage Increase in Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Shengzhi Xu ◽  
Shaozhen Xiong ◽  
Xinhua Geng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Limited Current

ABSTRACTLight-induced metastability of amorphous/microcrystalline (micromorph) silicon tandem solar cell, in which the microcrystalline bottom cell was deposited in a single-chamber system, has been studied under a white light for more than 1000 hours. Two different light-induced metastable behaviors were observed. The first type was the conventional light-induced degradation, where the open-circuit voltage (Voc), fill factor (FF), and short-circuit current density (Jsc) were degraded, hence the efficiency was degraded as well. This phenomenon was observed mainly in the tandem cells with a bottom cell limited current mismatch. The second type was with a light-induced increase in Voc, which sometimes resulted in an increase in efficiency. The second type of light-induced metastability was observed in the tandem cells with a top cell limited current mismatch. The possible mechanisms for these phenomena are discussed.

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiOx:H doped layers

2014 ◽  
Vol 92 (7/8) ◽  
pp. 913-916 ◽  
Author(s):  
V. Smirnov ◽  
A. Lambertz ◽  
F. Finger
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Improved Performance ◽  
Conversion Efficiencies ◽  
Insight Into

We present the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) in semitransparent bifacial microcrystalline silicon (μc-Si:H) solar cells. Semitransparent bifacial solar cells are of interest for a number of technical applications like building integration or concentrator devices, but also can offer new insight into solar cell properties due to the possibility to illuminate the cell from both sides. Appropriately selected μc-SiOx:H n-layers with low refractive index and high optical band gap allow the reduction of the reflection of the cells and improve short circuit current density (JSC) and conversion efficiencies. The quality of n-type μc-SiOx:H window layers is demonstrated in solar cells with highly reflective ZnO/Ag contacts. High JSC values of 24.8 mA/cm2 and efficiencies of 9.5% are obtained for 1 μm thick solar cells.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

High face-on ratio isoindigo copolymers with extended nano-fibrillar networks in fullerene-based thick (>300 nm) photovoltaics achieving a high efficiency of 10.7%

2019 ◽  
Vol 7 (37) ◽  
pp. 21309-21320 ◽  
Author(s):  
Song-Fu Liao ◽  
Chun-Fu Lu ◽  
Adane Desta Fenta ◽  
Chin-Ti Chen ◽  
Chi-Yang Chao ◽  
...  
Keyword(s):  
Active Layer ◽  
Current Density ◽  
High Efficiency ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Fibrillar Network

In addition to the thick active layer (>300 nm), the extended nano-fibrillar network and a high face-on ratio of isoindigo copolymers in the nano-fibrillar network raise the short-circuit current density up to 22 mA cm−2 and efficiency near 10.7%.

High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

2019 ◽  
Vol 34 (04) ◽  
pp. 2050053
Author(s):  
Fatemeh Ghavami ◽  
Alireza Salehi
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Efficiency ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorber Layer ◽  
Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

Improvement of the short-circuit current density and efficiency in micromorph tandem solar cells by an anti-reflection layer

2011 ◽  
Vol 520 (1) ◽  
pp. 550-553 ◽  
Author(s):  
Ping-Kuan Chang ◽  
Po-Tsung Hsieh ◽  
Fu-Ji Tsai ◽  
Chun-Hsiung Lu ◽  
Chih-Hung Yeh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tandem Solar Cells

Silicon nanowires solar cell

2011 ◽  
Vol 1305 ◽  
Author(s):  
Xiaobing Xie ◽  
Xiangbo Zeng ◽  
Wenjie Yao ◽  
Ping Yang ◽  
Shiyong Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Nanowires ◽  
Short Circuit ◽  
Nanowire Array ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Type Layer ◽  
Si Nanowire Array

ABSTRACTWe made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.

scholarly journals Controlled Photoanode Properties for Large-Area Efficient and Stable Dye-Sensitized Photovoltaic Modules

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2125
Author(s):  
Wei-Hao Chiu ◽  
Kun-Mu Lee ◽  
Vembu Suryanarayanan ◽  
Jen-Fu Hsu ◽  
Ming-Chung Wu
Keyword(s):  
High Efficiency ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Solution Concentration ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tio2 Electrode ◽  
Large Area ◽  
Dye Sensitized ◽  
Module Efficiency

Nowadays, a dye-sensitized solar cell (DSSC) attracts attention to its development widely due to its several advantages, such as simple processes, low costs, and flexibility. In this work, we demonstrate the difference in device structures between small size and large size cells (5 cm × 5 cm, 10 cm × 10 cm and 10 cm × 15 cm). The design of the photoanode and dye-sensitized process plays important roles in affecting the cell efficiency and stability. The effects of the TiO2 electrode, using TiCl4(aq) pretreatment and post-treatment processes, are also discussed, whereas, the open-circuit voltage (Voc), short-circuit current density (Jsc), and module efficiency are successfully improved. Furthermore, the effects on module performances by some factors, such as dye solution concentration, dye soaking temperature, and electrolyte injection method are also investigated. We have demonstrated that the output power of a 5 cm × 5 cm DSSC module increases from 86.2 mW to 93.7 mW, and the module efficiency achieves an outstanding performance of 9.79%. Furthermore, enlarging the DSSC modules to two sizes (10 cm × 10 cm and 10 cm × 15 cm) and comparing the performance with different module designs (C-DSSC and S-DSSC) also provides the specific application of polymer sealing and preparing high-efficiency large-area DSSC modules.

High Efficiency Thin Film Solar Cells with Intrinsic Microcrystalline Silicon Prepared by Hot Wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
S. Klein ◽  
F. Finger ◽  
R. Carius ◽  
B. Rech ◽  
L. Houben ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Short Circuit ◽  
Wavelength Region ◽  
Maximum Efficiency ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Cell Parameters ◽  
Volume Fractions

AbstractThin film microcrystalline silicon solar cells were prepared with intrinsic absorber layers by Hot Wire CVD at various silane concentrations and substrate temperatures. Independently from the substrate temperature, a maximum efficiency is observed close to the transition to amorphous growth, i.e. the best cells already show considerable amorphous volume fractions. A detailed analysis of the thickness dependence of the solar cell parameters in the dark and under illumination indicate a high electronic quality of the i-layer material. Solar cells with very high open circuit voltages Voc up to 600mV in combination with fill factors above 70% and high short circuit current densities jsc of 22mA/cm2 were obtained, yielding efficiencies above 9%. The highest efficiency of 9.4% was achieved in solar cells of 1.4μm and 1.8μm thickness. These cells with high Voc have considerable amorphous volume fractions in the i-layer, leading to a reduced absorption in the infrared wavelength region.

scholarly journals Promising Shadow Masking Technique for the Deposition of High-Efficiency Amorphous Silicon Solar Cells Using Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.

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