Synthesis, characterization, self-assembly and non-ohmic Schottky barrier diode behaviors of two iron(iii) based semiconductors with theoretical insight

CrystEngComm ◽  
2020 ◽  
Vol 22 (31) ◽  
pp. 5170-5181 ◽  
Author(s):  
Tanmoy Basak ◽  
Dhananjoy Das ◽  
Partha Pratim Ray ◽  
Snehasis Banerjee ◽  
Shouvik Chattopadhyay
Keyword(s):  
Schiff Base ◽  
Schottky Barrier ◽  
Self Assembly ◽  
Schottky Barrier Diode ◽  
Band Gaps ◽  
Schiff Base Complexes ◽  
Schottky Barrier Diodes ◽  
Theoretical Insight

Schottky barrier diodes have been fabricated using two iron(iii) Schiff base complexes. The total and partial DOS values have been calculated using DFT to calculate the band gaps in these complexes.

The Study of the Optoelectronic Properties of a-SiGe:H Photodiodes

1991 ◽  
Vol 219 ◽  
Author(s):  
L. C. Kuo ◽  
C. C. Lee ◽  
K. H. Chen ◽  
Y. K. Fang ◽  
C. H. Yu
Keyword(s):  
Schottky Barrier ◽  
Layer Thickness ◽  
Quantum Efficiency ◽  
Reverse Bias ◽  
Low Cost ◽  
Schottky Barrier Diode ◽  
Band Gaps ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Infrared Photodetector

ABSTRACTWe have studied the spectrum of various types of a-SiGe:H alloys for pin and Schottky barrier photodlodes, in which the band gaps of the a-SiGe:H vary between 1.75 eV and 1.35 eV. It has been found that the spectral re-ponse of the Schottky barrier diode shifts significantly to longer wavelength and the quantum efficiency decreases with an increase in i layer thickness. However, for the pin diode, an increase in the i layer thickness can hardly shift the spectrum to longer wavelength. For both pin and Schottky barrier diodes, the quantum efficiency can be increased by increasing the reverse bias. Therefore, an enhanced spectrum with a maximum at 800nm and a tail to lun can be achieved for a reverse-biased a-SiGe:H Schottky barrier diode. The results indicate that a-SiGe:H has a great potential for a low cost infrared photodetector.

Tetra- and poly-nuclear Cd(ii) complexes of an N3O4 Schiff base ligand: crystal structures, electrical conductivity and photoswitching properties

2020 ◽  
Vol 44 (34) ◽  
pp. 14733-14743 ◽  
Author(s):  
Tanmoy Kumar Ghosh ◽  
Sumanta Jana ◽  
Subrata Jana ◽  
Ashutosh Ghosh
Keyword(s):  
Electrical Conductivity ◽  
Schiff Base ◽  
Schottky Barrier ◽  
Crystal Structures ◽  
Schiff Base Ligand ◽  
Schottky Barrier Diode ◽  
Polymeric Complex

A tetranuclear and a polymeric Cd(ii) complex have been synthesized and characterized. The polymeric complex based device behaves as a Schottky barrier diode and exhibits a photoswitching property.

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

scholarly journals Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 34710-34719 ◽  
Author(s):  
Kousik Ghosh ◽  
Sayantan Sil ◽  
Partha Pratim Ray ◽  
Joaquín Ortega-Castro ◽  
Antonio Frontera ◽  
...  
Keyword(s):  
Schiff Base ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Theoretical Investigation ◽  
Schiff Base Ligand ◽  
Schottky Barrier Diode ◽  
Sodium Complex ◽  
Diode Behavior ◽  
Schottky Device

The opto-electronic properties of a cobalt(iii)–sodium complex have been studied with the help of both experimental and theoretical investigation. The complex has also been used to fabricate an effective photosensitive Schottky device.

Self-Assembly of Dimeric MnIII–Schiff-Base Complexes Tuned by Perchlorate Anions

2007 ◽  
Vol 2007 (24) ◽  
pp. 3789-3797 ◽  
Author(s):  
Manuel R. Bermejo ◽  
M. Isabel Fernández ◽  
Esther Gómez-Fórneas ◽  
Ana González-Noya ◽  
Marcelino Maneiro ◽  
...  
Keyword(s):  
Schiff Base ◽  
Self Assembly ◽  
Schiff Base Complexes

A tetranuclear nickel/lead complex with a salen type Schiff base: synthesis, structure and exploration of photosensitive Schottky barrier diode behaviour

2019 ◽  
Vol 43 (13) ◽  
pp. 5020-5031 ◽  
Author(s):  
Sourav Roy ◽  
Arka Dey ◽  
Michael G. B. Drew ◽  
Partha Pratim Ray ◽  
Shouvik Chattopadhyay
Keyword(s):  
Schiff Base ◽  
Charge Transfer ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Barrier Diode ◽  
Kinetics Of ◽  
Lead Complex ◽  
Nickel Lead

A tetranuclear nickel(ii)/lead(ii) complex has been synthesized and characterized. The complex based device behaves as a Schottky diode. The charge transfer kinetics of the complex is enhanced after light soaking.

The self-assembly switching of the group 13 tetrahedral Schiff base complexes by changing the character of coordination centre

2004 ◽  
Vol 28 (11) ◽  
pp. 1320-1325 ◽  
Author(s):  
Janusz Lewiński ◽  
Janusz Zachara ◽  
Patryk Stolarzewicz ◽  
Maciej Dranka ◽  
Edyta Kołodziejczyk ◽  
...  
Keyword(s):  
Schiff Base ◽  
Self Assembly ◽  
The Self ◽  
Schiff Base Complexes ◽  
Group 13

scholarly journals Hydrogen bond mediated intermolecular magnetic coupling in mononuclear high spin iron(iii) Schiff base complexes: synthesis, structure and magnetic study with theoretical insight

RSC Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 3315-3323
Author(s):  
Tanmoy Basak ◽  
Carlos J. Gómez-García ◽  
Rosa M. Gomila ◽  
Antonio Frontera ◽  
Shouvik Chattopadhyay
Keyword(s):  
Hydrogen Bond ◽  
Schiff Base ◽  
Dft Calculations ◽  
High Spin ◽  
Magnetic Coupling ◽  
Schiff Base Complexes ◽  
Magnetic Interactions ◽  
Mononuclear Iron ◽  
Theoretical Insight ◽  
High Spin Iron

H-Bond mediated magnetic interactions in mononuclear iron(iii) Schiff base complexes were studied experimentally and validated by using DFT calculations.

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

2021 ◽  
Vol 21 (3) ◽  
pp. 2001-2004
Author(s):  
Seong-Ji Min ◽  
Michael A. Schweitz ◽  
Ngoc Thi Nguyen ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Thermal Sensitivity ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Saturation Current ◽  
Pin Diodes ◽  
Temperature Range ◽  
Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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