High Efficiency Stable a-Si Three Junction 12″ × 13″ Modules

1991 ◽  
Vol 219 ◽  
Author(s):  
Murray S. Bennett ◽  
A. Catalano ◽  
J. Newton ◽  
C. Poplawski ◽  
R. Arya ◽  
...  
Keyword(s):  
Preliminary Data ◽  
Small Area ◽  
High Efficiency ◽  
Scale Up ◽  
Large Area ◽  
Good Resistance ◽  
Photovoltaic Modules ◽  
Area Efficiency ◽  
Efficiency Losses ◽  
Area Deposition

ABSTRACTThree junction a-Si based photovoltaic modules have been made using a design which provides high initial efficiency and good resistance to photodegradation. The cells have a Si/Si/SiGe configuration in which the i-layer in the middle junction is 4000Å thick. The most efficient module measured to date has an aperture area efficiency of 9.82%. This design will limit light-induced efficiency losses to 15% or less, based on small area results, however defect related problems have increased this value to 17 – 23%. Preliminary data on the effect of shunts on stability is presented. We discuss various concerns related to large area deposition and scale-up.

Optimization of High Efficiency Amorphous Silicon Alloy based Triple-Junction Modules

1999 ◽  
Vol 557 ◽  
Author(s):  
A. Banerjee ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Triple Junction ◽  
Systematic Approach ◽  
High Efficiency ◽  
Scale Up ◽  
Active Area ◽  
National Renewable Energy Laboratory ◽  
Large Area ◽  
World Record ◽  
Area Efficiency ◽  
Amorphous Si

AbstractA systematic approach has been used to scale up high efficiency 0.25cm2 active-area amorphous Si alloy based triple-junction devices to high-efficiency encapsulated modules of aperture area ~920cm2. In order to analyze the losses involved in the scale-up, intermediate aperture area, 40cm2 and 450cm2, modules have also been fabricated. The best stable active-area efficiency obtained on the small-area cells is 12.9%. The best initial efficiency of a ~920cm2 aperture area encapsulated module is 12.1%. National Renewable Energy Laboratory (NREL) has independently light soaked three of the ~920cm2 modules. They have measured a stable efficiency of 10.5% which represents a new world record. This paper presents various aspects of the large-area module work.

scholarly journals High-efficiency large-area perovskite photovoltaic modules achieved via electrochemically assembled metal-filamentary nanoelectrodes

2018 ◽  
Vol 4 (8) ◽  
pp. eaat3604 ◽  
Author(s):  
Soonil Hong ◽  
Jinho Lee ◽  
Hongkyu Kang ◽  
Geunjin Kim ◽  
Seyoung Kee ◽  
...  
Keyword(s):  
High Efficiency ◽  
Large Area ◽  
Photovoltaic Modules ◽  
Perovskite Photovoltaic

Microcrystalline Silicon Thin Films and Triple-Junction Solar Cells

2012 ◽  
Vol 468-471 ◽  
pp. 1912-1915
Author(s):  
Hui Zhi Ren ◽  
Ying Zhao ◽  
Xiao Dan Zhang ◽  
Hong Ge ◽  
Zong Pan Wang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Triple Junction ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
High Quality ◽  
Area Efficiency ◽  
Silicon Thin Films ◽  
Deposition Parameters ◽  
Area Deposition

We report on microcrystalline silicon thin films and a-Si:H/a-SiGe:H/μc-Si:H triple-junction p-i-n solar cells deposited on large-area glass substrate. Microcrystalline silicon (μc-Si:H) bottom cells were deposited at a VHF-PECVD deposition system with 40.68MHz. It is necessary to develop the uniformity of μc-Si:H thin films for large-area deposition of high-quality triple-junction solar cells. By optimizing the deposition parameters, μc-Si:H thin films have been obtained with good thickness and very good crystalline volume fractions uniformity over the whole substrates area. The triple-junction module have been successful fabricated. The best module on 0.79 m2 size substrates has an initial total-area efficiency of 8.35%.

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 345 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

AbstractWe have previously demonstrated selective area deposition of n+ microcrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-mediated silicon etching.

Progress in large area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 336 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

We have previously demonstrated selective area deposition of n+ Macrocrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate Amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-Mediated silicon etching.

High Efficiency, Large Area, Nanocrystalline Silicon Based, Triple-Junction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Banerjee ◽  
T. Su ◽  
D. Beglau ◽  
G. Pietka ◽  
F. Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Oxygen Concentration ◽  
Small Area ◽  
High Efficiency ◽  
Steel Substrate ◽  
Impurity Content ◽  
Nanocrystalline Silicon ◽  
High Rate ◽  
Large Area ◽  
Low Rate

ABSTRACTWe have fabricated large-area, thin-film multijunction solar cells based on hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) made in a large area batch reactor. The device structure consisted of an a-Si:H/nc-Si:H/nc-Si:H stack on Ag/ZnO back reflector coated stainless steel substrate, deposited using our proprietary High Frequency (HF) glow discharge technique. For the nc-Si:H films, we investigated two deposition rate regimes: (i) low rate <1 nm/s and (ii) high rate >1 nm/s. We optimized the deposition parameters, such as pressure, gas flow, dilution, and power. We did SIMS analysis on the optimized films, and found the impurity concentrations were one order of magnitude lower than the films made with the conventional RF process. In particular, the oxygen concentration is reduced to ~1018 cm-3. This value is among the lowest oxygen concentration reported in literature. The low impurity content is attributed to proprietary cathode hardware and the optimized deposition process. During the initial optimization and investigative phase, we fabricated small-area (0.25 cm2 and 1.1 cm2) cells. The information obtained from the initial phase was used to fabricate large-area (aperture area 400 cm2) cells, and encapsulated the cells using the same flexible encapsulants that are used in our commercial product. We have light soaked the low-rate and high-rate encapsulated modules. The highest initial efficiency of the low-rate modules is 12.0% as confirmed by NREL. The highest corresponding stable efficiency attained for the low-rate samples cells is 11.35%. For the high-rate small-area (1.1 cm2) cells, the highest initial active-area efficiency and corresponding stable efficiency attained are 13.97% and 12.9%, respectively. We present the details of the research conducted to develop the low- and high-rate cells and modules.

scholarly journals Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Molecules ◽  
2021 ◽  
Vol 26 (16) ◽  
pp. 4940
Author(s):  
Yifei Ge ◽  
Mingming Lu ◽  
Jiahao Wang ◽  
Jianxun Xu ◽  
Yuliang Zhao
Keyword(s):  
High Efficiency ◽  
Pulse Current ◽  
Scale Up ◽  
Graphene Film ◽  
Single Pulse ◽  
Dimensional Structure ◽  
Wafer Surface ◽  
Nickel Layer ◽  
Large Area ◽  
Si Wafer

Graphene has many excellent optical, electrical and mechanical properties due to its unique two-dimensional structure. High-efficiency preparation of large area graphene film is the key to achieve its industrial applications. In this paper, an ultrafast quenching method was firstly carried out to flow a single pulse current through the surface of a Si wafer with a size of 10 mm × 10 mm for growing fully covered graphene film. The wafer surface was firstly coated with a 5-nm-thick carbon layer and then a 25-nm-thick nickel layer by magnetron sputtering. The optimum quenching conditions are a pulse current of 10 A and a pulse width of 2 s. The thus-prepared few-layered graphene film was proved to cover the substrate fully, showing a high conductivity. Our method is simple and highly efficient and does not need any high-power equipment. It is not limited by the size of the heating facility due to its self-heating feature, providing the potential to scale up the size of the substrates easily. Furthermore, this method can be applied to a variety of dielectric substrates, such as glass and quartz.

Processing of Cunse2 Films for Photovoltaics

1993 ◽  
Vol 327 ◽  
Author(s):  
BÜlent M. Basol ◽  
Vijay K. Kapur
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Device Performance ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Solar Cell Performance ◽  
Photovoltaic Modules ◽  
Photovoltaic Materials ◽  
Polycrystalline Thin Films ◽  
High Efficiency Solar Cells

AbstractCuInSe2and related I-HI-VI2 compound semiconductors containing Ga and S are important photovoltaic materials with electrical and optical properties that can be tuned for optimum device performance. Polycrystalline thin films of ternary and multinary compounds from the Cu(In,Ga)(Se,S)2family have already yielded laboratory size solar cells with over 15 % efficiency. Large area photovoltaic modules with over 10% efficiency have also been demonstrated using these materials. In this contribution we present a brief review of the CuInSe2 material characteristics which are important to solar cell performance and their correlation with the processing variables. We concentrate on films obtained by the selenization technique. Selenization of Cu-In precursors is an approach that has yielded good quality CuInSe2films which have been used for the fabrication of high efficiency solar cells.

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Amorphous Si

Pyrazolium Phase Change Materials for Solar-Thermal and Wind Energy Storage

2019 ◽  
Author(s):  
Karolina Matuszek ◽  
R. Vijayaraghavan ◽  
Craig Forsyth ◽  
Surianarayanan Mahadevan ◽  
Mega Kar ◽  
...  
Keyword(s):  
Energy Storage ◽  
Thermal Energy ◽  
Thermal Energy Storage ◽  
Phase Change Materials ◽  
High Efficiency ◽  
Scale Up ◽  
Solar Thermal ◽  
Energy Storage Materials ◽  
Solar Thermal Energy ◽  
Storage Materials

Renewable energy has the ultimate capacity to resolve the environmental and scarcity challenges of the world’s energy supplies. However, both the utility of these sources and the economics of their implementation are strongly limited by their intermittent nature; inexpensive means of energy storage therefore needs to be part of the design. Distributed thermal energy storage is surprisingly underdeveloped in this context, in part due to the lack of advanced storage materials. Here, we describe a novel family of thermal energy storage materials based on pyrazolium cation, that operate in the 100-220°C temperature range, offering safe, inexpensive capacity, opening new pathways for high efficiency collection and storage of both solar-thermal energy, as well as excess wind power. We probe the molecular origins of the high thermal energy storage capacity of these ionic materials and demonstrate extended cycling that provides a basis for further scale up and development.

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