High Efficiency, Large Area, Nanocrystalline Silicon Based, Triple-Junction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Banerjee ◽  
T. Su ◽  
D. Beglau ◽  
G. Pietka ◽  
F. Liu ◽  
...  

ABSTRACTWe have fabricated large-area, thin-film multijunction solar cells based on hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) made in a large area batch reactor. The device structure consisted of an a-Si:H/nc-Si:H/nc-Si:H stack on Ag/ZnO back reflector coated stainless steel substrate, deposited using our proprietary High Frequency (HF) glow discharge technique. For the nc-Si:H films, we investigated two deposition rate regimes: (i) low rate <1 nm/s and (ii) high rate >1 nm/s. We optimized the deposition parameters, such as pressure, gas flow, dilution, and power. We did SIMS analysis on the optimized films, and found the impurity concentrations were one order of magnitude lower than the films made with the conventional RF process. In particular, the oxygen concentration is reduced to ~1018 cm-3. This value is among the lowest oxygen concentration reported in literature. The low impurity content is attributed to proprietary cathode hardware and the optimized deposition process. During the initial optimization and investigative phase, we fabricated small-area (0.25 cm2 and 1.1 cm2) cells. The information obtained from the initial phase was used to fabricate large-area (aperture area 400 cm2) cells, and encapsulated the cells using the same flexible encapsulants that are used in our commercial product. We have light soaked the low-rate and high-rate encapsulated modules. The highest initial efficiency of the low-rate modules is 12.0% as confirmed by NREL. The highest corresponding stable efficiency attained for the low-rate samples cells is 11.35%. For the high-rate small-area (1.1 cm2) cells, the highest initial active-area efficiency and corresponding stable efficiency attained are 13.97% and 12.9%, respectively. We present the details of the research conducted to develop the low- and high-rate cells and modules.

2008 ◽  
Vol 1066 ◽  
Author(s):  
Xixiang Xu ◽  
Baojie Yan ◽  
Dave Beglau ◽  
Yang Li ◽  
Greg DeMaggio ◽  
...  

ABSTRACTSolar cells based on hydrogenated nanocrystalline silicon (nc-Si:H) have demonstrated significant improvement in the last few years. From the standpoint of commercial viability, good quality nc-Si:H films must be deposited at a high rate. In this paper, we present the results of our investigations on obtaining high quality nc-Si:H and a-Si:H films and solar cells over large areas using high deposition rate. We have employed the modified very high frequency (MVHF) glow discharge technique to realize high-rate deposition. Modeling studies were conducted to attain good spatial uniformity of electric field over a large area (15”×1”) MVHF cathode for nc-Si:H deposition. A comparative study has been carried out between the RF and MVHF plasma deposited a-Si:H and nc-Si:H single-junction and a-Si:H/nc-Si:H double-junction solar cells. By optimizing the nc-Si:H cell and the tunnel/recombination junctions, we have obtained an initial aperture-area (460 cm2) efficiency of 11.9% for a-Si:H/nc-Si:H double-junction cells using conventional RF (13.56 MHz) plasma deposition. The deposition rate was 3 Å/sec. Results on solar cells made with MVHF will also be presented.


2010 ◽  
Vol 1245 ◽  
Author(s):  
Xixiang Xu ◽  
Tining Su ◽  
Scott Ehlert ◽  
David Bobela ◽  
Dave Beglau ◽  
...  

AbstractWe present the progress made in attaining high-efficiency large-area nc-Si:H based multi-junction solar cells using Modified Very High Frequency technology. We focused our effort on improving the spatial uniformity and homogeneity of nc-Si:H film growth and cell performance. We also conducted both indoor and outdoor light soaking studies and achieved 11.2% stabilized efficiency on large-area (≥400 cm2) encapsulated a-Si:H/nc-Si:H/nc-Si:H triple-junction cells.


2021 ◽  
pp. 2109968
Author(s):  
Xiaojia Xu ◽  
Xiaoyu Ji ◽  
Rui Chen ◽  
Fangyuan Ye ◽  
Shuaijun Liu ◽  
...  

2019 ◽  
Vol 191 ◽  
pp. 389-398 ◽  
Author(s):  
Shaoyang Ma ◽  
Tao Ye ◽  
Tingting Wu ◽  
Zhe Wang ◽  
Zhixun Wang ◽  
...  

Solar Energy ◽  
2021 ◽  
Vol 230 ◽  
pp. 1033-1039
Author(s):  
Chen Zhang ◽  
Tongqing Qi ◽  
Wei Wang ◽  
Chenchen Zhao ◽  
Shuda Xu ◽  
...  

Author(s):  
S. Yoshida ◽  
K. Mitsui ◽  
T. Oda ◽  
Y. Yukimoto ◽  
K. Shirahata

2020 ◽  
Vol 32 (51) ◽  
pp. 2002202 ◽  
Author(s):  
Sang‐Won Lee ◽  
Soohyun Bae ◽  
Donghwan Kim ◽  
Hae‐Seok Lee

2001 ◽  
Vol 664 ◽  
Author(s):  
Shingo Okamoto ◽  
Akira Terakawa ◽  
Eiji Maruyama ◽  
Wataru Shinohara ◽  
Makoto Tanaka ◽  
...  

ABSTRACTThis paper reviews recent progress in large-area a-Si/a-SiGe tandem solar cells in Sanyo. Much effort has been devoted to increasing both the stabilized efficiency and the process throughput. A key issue in increasing the stabilized efficiency is thinner i-layer structure with an improved optical confinement effect. High-rate deposition of the i-layers has been investigated using rf (13.56MHz) plasma-CVD method while keeping the substrate temperature below 200 °C. A high photosensitivity of 106 of a-Si:H films maintain up to the deposition rate (Rd) of 15 Å/s by optimizing hydrogen dilution and other deposition conditions. It is of great importance to utilize the effect of hydrogen dilution which can reduce the incorporation of excess hydrogen in the films. The world's highest conversion efficiency of 11.2% has been achieved for a large-area (8252cm2) a-Si/a-SiGe tandem by combining the optimized hydrogen dilution and other solar cell related technologies.


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