Electrical Properties Of S+ Implantation in Si GaAs

1990 ◽  
Vol 209 ◽  
Author(s):  
Guanqun Xia ◽  
Anmin Guan ◽  
Haiyang Geng ◽  
Weiyuan Wang
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Active Layer ◽  
Enhanced Diffusion ◽  
Gaas Mesfet ◽  
Rapid Diffusion

ABSTRACTThe electrical properties of S+ implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+ implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+ or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+ implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

1996 ◽  
Vol 74 (S1) ◽  
pp. 32-34 ◽  
Author(s):  
J. -J. He ◽  
Emil S. Koteles ◽  
M. Davis ◽  
P. J. Poole ◽  
M. Dion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Ion Implantation ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Pin Diode ◽  
Excess Loss ◽  
Absorption Constant

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4450-4453
Author(s):  
Je Won Kim ◽  
Seong-Il Kim ◽  
Yong Tae Kim ◽  
Sangsig Kim ◽  
Man Young Sung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

1999 ◽  
Vol 568 ◽  
Author(s):  
Aditya Agarwal ◽  
Hans-J. Gossmann ◽  
Anthony T. Fiory
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Driving Forces ◽  
Recent Experimental Data ◽  
Enhanced Diffusion ◽  
Temperature Ramp ◽  
Rate Effects ◽  
Low Energies ◽  
Ultra Shallow Junctions ◽  
P Type

ABSTRACTOver the last couple of years rapid thermal annealing (RTA) equipment suppliers have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates on the order of hundreds of degrees per second. One of the driving forces for adopting such a strategy was the experimental demonstration of 30nm p-type junctions by employing a ramp-up rate of ≈400°C/s. It was subsequently proposed that the ultra-fast temperature ramp-up was suppressing transient enhanced diffusion (TED) of boron which results from the interaction of the implantation damage with the dopant. The capability to achieve very high temperature ramp-rates was thus embraced as an essential requirement of the next generation of RTA equipment.In this paper, recent experimental data examining the effect of the ramp-up rate during spike-and soak-anneals on enhanced diffusion and shallow junction formation is reviewed. The advantage of increasing the ramp-up rate is found to be largest for the shallowest, 0.5-keV, B implants. At such ultra-low energies (ULE) the advantage arises from a reduction of the total thermal budget. Simulations reveal that a point of diminishing return is quickly reached when increasing the ramp-up rate since the ramp-down rate is in practice limited. At energies where TED dominates, a high ramp-up rate is only effective in minimizing diffusion if the implanted dose is sufficiently small so that the TED can be run out during the ramp-up portion of the anneal; for larger doses, a high ramp-up rate only serves to postpone the TED to the ramp-down duration of the anneal. However, even when TED is minimized at higher implant energies via high ramp-up rates, the advantage is unobservable due to the rather large as-implanted depth. It appears then that while spike anneals allow the activation of ULE-implanted dopants to be maximized while minimizing their diffusion the limitation imposed by the ramp-down rate compromises the advantage of very aggressive ramp-up rates.

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

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