Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing

1991 ◽  
Vol 38 (3) ◽  
pp. 476-486 ◽  
Author(s):  
S.N. Hong ◽  
G.A. Ruggles ◽  
J.J. Wortman ◽  
M.C. Ozturk
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

1996 ◽  
Vol 74 (S1) ◽  
pp. 32-34 ◽  
Author(s):  
J. -J. He ◽  
Emil S. Koteles ◽  
M. Davis ◽  
P. J. Poole ◽  
M. Dion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Ion Implantation ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Pin Diode ◽  
Excess Loss ◽  
Absorption Constant

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Shallow Junctions for Sub-100 Nm Cmos Technology

2001 ◽  
Vol 669 ◽  
Author(s):  
Veerle Meyssen ◽  
Peter Stolk ◽  
Jeroen van Zijl ◽  
Jurgen van Berkum ◽  
Willem van de Wijgert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cmos Technology ◽  
Low Energy ◽  
Annealing Conditions ◽  
Delta Doping ◽  
Shallow Junctions ◽  
P Type ◽  
Spike Annealing

ABSTRACTThis paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.

Electrical Properties Of S+ Implantation in Si GaAs

1990 ◽  
Vol 209 ◽  
Author(s):  
Guanqun Xia ◽  
Anmin Guan ◽  
Haiyang Geng ◽  
Weiyuan Wang
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Active Layer ◽  
Enhanced Diffusion ◽  
Gaas Mesfet ◽  
Rapid Diffusion

ABSTRACTThe electrical properties of S+ implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+ implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+ or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+ implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Low Energy ◽  
Exciton Transition ◽  
Transition Energies ◽  
Diffusion Of Vacancies ◽  
Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

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