Charged Dangling Bonds and Crystallization in Group IV Semiconductors

1982 ◽  
Vol 13 ◽  
Author(s):  
P.J. Germain ◽  
M.A. Paesler ◽  
D.E. Sayers ◽  
K. Zellama
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Ionizing Radiation ◽  
Cross Section ◽  
Capture Cross Section ◽  
Group Iv ◽  
Capture Cross ◽  
Dangling Bonds ◽  
Group Iv Semiconductors ◽  
Increasing Function

ABSTRACTCrystallization of amorphous Ge (or Si) has been studied as a function of temperature and the flux of ionizing radiation (or doping). The crystallization growth rate Vg takes on the form Vg = vo exp(−E/kT) where vo is an increasing function of flux (or doping). We propose the following to explain these data: A concentration of mobile dangling bonds (DBs) exists in the bulk and near the amorphous-crystalline (a-c) interface. Ionization and doping induce transitions from the uncharged state Do to the charged states D+ and D−. The process controlling crystallization resulting in the above activation energy is discussed. Only certain sites on the a-side of the a-c interface are available for crystallization, and these sites are those which have captured DBs. The charged D+; and D− states have a larger capture cross section than the uncharged Do state. Increased concentrations of charged DBs results in an enhancement of the prefactor in the above equation.

A deep semiconductor defect with continuously variable activation energy and capture cross section

1999 ◽  
Vol 75 (2) ◽  
pp. 277-279 ◽  
Author(s):  
M. A. Lourenço ◽  
Wai Lek Ng ◽  
K. P. Homewood ◽  
K. Durose
Keyword(s):  
Activation Energy ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Variable Activation Energy

The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H

1986 ◽  
Vol 70 ◽  
Author(s):  
F. Vaillant ◽  
D. Jousse
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Correlation Energy ◽  
Detailed Balance ◽  
Parametric Representation ◽  
Capture Cross ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Bond Density ◽  
Good Agreement

ABSTRACTA theoretical model has been developed for recombination at dangling bonds which explains the γ variations between 0.5 and 1 depending on the Fermi level position. The occupation probabilities of the T3+, T3° and T3- states under illumination have been calculated using the statistics of correlated levels. The γ exponent is derived through a parametric representation of the equations of detailed balance and charge conservation. A good agreement with experiment is obtained with a dangling bond density of 5×1015 cm-3, a placing of the T3° level at 0.95 eV below Ec, an effective correlation energy of 0.4 eV and a charged to neutral capture cross section ratio of 50.

Analysis of Anomalous Peak Heights in DlTS of MBE-Grown Aluminum Gallium Arsenide

1990 ◽  
Vol 209 ◽  
Author(s):  
W. Lim ◽  
L. P. Trombetta ◽  
Keith Jamison
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Trap Depth ◽  
Sample Temperature ◽  
Emission Rates ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Anomalous Peak

ABSTRACTDLTS data taken on MBE grown AlGaAs films show peak heights which increase, maximize, and then decrease with increasing sample temperature. This behavior is difficult to explain within the context of conventional DLTS analysis. We suggest that the data can be accounted for by a trap with a temperature dependent capture cross section in conjunction with a model described by Lee and Borrego in which electron and hole emission rates are comparable. Using this analysis, we obtain an effective trap depth Eeff of 0.35 eV and a capture cross section activation energy Eσ 0.25 eV.

scholarly journals Investigation of defects in structures based on BP/Si heterojunction

2021 ◽  
Vol 2103 (1) ◽  
pp. 012088
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
D A Kudryashov ◽  
A S Gudovskikh
Keyword(s):  
Activation Energy ◽  
Conduction Band ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Defect Level ◽  
Transient Spectroscopy

Abstract In this work the properties of the BP/Si heterojunction interface were investigated by capacitance methods, the deep levels transient spectroscopy method and admittance spectroscopy. Admittance spectroscopy did not detect any defects, but the deep level transient spectroscopy showed response with activation energy of 0.33 eV and capture cross-section σn=(1-10)·10-19 cm2 and defect concentration (NT) is in the order of 1013 cm-3. This defect level is a trap for electron with position of 0.33 eV below the conduction band in region near the BP/Si interface.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
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