Reflection Electron Diffraction and Structural Behavior of Gaas / Gaas (111)B Grown Via Mbe

1990 ◽  
Vol 208 ◽  
Author(s):  
K. C. Rajkumar ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Electron Diffraction ◽  
Surface Morphology ◽  
High Energy ◽  
In Situ Monitoring ◽  
Spot Intensity ◽  
High Energy Electron ◽  
Surface Phase ◽  
Gaas Films ◽  
Reflection Electron Diffraction

Homoepitaxy on the {111} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE

1990 ◽  
Vol 202 ◽  
Author(s):  
K. C. Rajkumar ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Electron Diffraction ◽  
Surface Morphology ◽  
High Energy ◽  
In Situ Monitoring ◽  
Spot Intensity ◽  
High Energy Electron ◽  
Surface Phase ◽  
Gaas Films ◽  
Reflection Electron Diffraction

Homoepitaxy on the {1ll} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

scholarly journals In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction

2003 ◽  
Vol 52 (10) ◽  
pp. 2601
Author(s):  
Chen Ying-Fei ◽  
Peng Wei ◽  
Li Jie ◽  
Chen Ke ◽  
Zhu Xiao-Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Oxide Thin Films

Rheed Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

1992 ◽  
Vol 275 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Peter Bodin ◽  
Hirofumi Matsuhata
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Molecular Beam ◽  
Superconducting Films ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Image Enhancing

ABSTRACTTo make Bi2Sr2CaCu2O8 superconducting films with top insulating SrTiO3, we use the molecular beam epitaxy technique (MBE) with in situ monitoring by reflection high-energy electron diffraction (RHEED). A new (RHEED)image enhancing technique, difference reflection high-energy electron diffraction (DRHEED) gave striking information on the growth process of each layer in the Bi:2212 compound as well as the rough and flat transition occurring during co-evaporated deposition of SrTi03.

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