In-situ monitoring of interface formation using the phase shift of reflection high-energy electron diffraction intensity oscillations

1995 ◽  
Vol 60 (5) ◽  
pp. 441-446
Author(s):  
W. Braun ◽  
K. Ploog
Keyword(s):  
Phase Shift ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Interface Formation

scholarly journals In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction

2003 ◽  
Vol 52 (10) ◽  
pp. 2601
Author(s):  
Chen Ying-Fei ◽  
Peng Wei ◽  
Li Jie ◽  
Chen Ke ◽  
Zhu Xiao-Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Oxide Thin Films

Rheed Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

1992 ◽  
Vol 275 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Peter Bodin ◽  
Hirofumi Matsuhata
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Molecular Beam ◽  
Superconducting Films ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Image Enhancing

ABSTRACTTo make Bi2Sr2CaCu2O8 superconducting films with top insulating SrTiO3, we use the molecular beam epitaxy technique (MBE) with in situ monitoring by reflection high-energy electron diffraction (RHEED). A new (RHEED)image enhancing technique, difference reflection high-energy electron diffraction (DRHEED) gave striking information on the growth process of each layer in the Bi:2212 compound as well as the rough and flat transition occurring during co-evaporated deposition of SrTi03.

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