PbTiO3 Thin Films by Chemical Beam Deposition

1990 ◽  
Vol 200 ◽  
Author(s):  
A.I. Kingon ◽  
K.Y. Hsieh ◽  
L.L.H. King ◽  
S.H. Rou ◽  
K.J. Bachmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacuum Chamber ◽  
Substrate Surface ◽  
High Vacuum ◽  
Molecular Beams ◽  
Active Oxygen ◽  
Fine Grained ◽  
High Vacuum Chamber ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTThe feasibility of chemical beam deposition of PbTiO3 thin films is demonstrated. The method utilizes chemical (molecular) beams of metalorganic precursors in a high vacuum chamber. Pyrolysis reactions of the metalorganics at the substrate surface are facilitated by presence of active oxygen from an ozone source. Fine grained, smooth polycrystalline PbTiO3 films have been deposited at substrate temperatures as low as 325°C.

Synthesis and Characterization of PbTiO3 Thin Films Grown by Chemical Beam Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
K.Y. Hsieh ◽  
S.H. Rou ◽  
L.L.H. King ◽  
A.I. Kingon
Keyword(s):  
Thin Films ◽  
Active Oxygen ◽  
Deposition Technique ◽  
Fine Grained ◽  
Si Substrates ◽  
Gaas Devices ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTA new deposition technique for PbTiO3 films utilizing chemical beams of metalorganic sources in an ultrahigh vacuum chamber is demonstrated. Ozone is introduced to provide a source of active oxygen. The role of active oxygen in controlling the surface chemical reactions is discussed. Fine grained, single phase PbTiO3 films have been deposited on MgO (100) and SiO2/Si substrates at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM, and TEM. The results suggest that the chemical beam deposition technique provides another method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Study Of Al Surface Segregation In Icosahedral A162Cu25.5Fe12.5

1998 ◽  
Vol 553 ◽  
Author(s):  
M. GIL-GAVATZ ◽  
D. Rouxel ◽  
P. Pigeat ◽  
B. Weber ◽  
J.-M. Dubois
Keyword(s):  
Surface Segregation ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Electron Spectrometer ◽  
Temperature Dependent ◽  
Self Diffusion ◽  
Different Temperatures ◽  
High Vacuum Chamber

AbstractSurface segregation of aluminium was observed during oxidation experiments of icosahedral A162Cu25.5 Fel12.5, performed in-situ and at different temperatures in the ultra-high vacuum chamber of a scanning Auger electron spectrometer. Two regimes, below and above 770K, were observed in relation with severe segregation of Al atoms at the surface for T > 770K. We postulate that this temperature dependent segregation rate is representative of the aluminium transport towards the surface of the quasicrystal. By analogy with classical diffusion experiments, we can thus determine reasonable estimates of the activation energy for Al self-diffusion in this quasicrystal. The results are consistent with the existence of phason flips below 770K and thermal vacancies above this temperature.

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Toward Growing III-V Clusters with Metalorganic Precursors

1997 ◽  
Vol 468 ◽  
Author(s):  
A. Demchuk ◽  
J. Porter ◽  
B. Koplitz
Keyword(s):  
Excimer Laser ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Quadrupole Mass ◽  
Reaction Region ◽  
High Vacuum Chamber ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Pulsed Nozzle

ABSTRACTThe present work reports on the formation of GaN-containing clusters from metalorganic precursors by combining pulsed laser photolysis and pulsed nozzle methods. Ammonia (NH3) and triethylgallium (C2H5)3Ga (TEG) or trimethylgallium (CH3)3Ga (TMG) with He, Ar, or N2 as the carrier gas are introduced into a high vacuum chamber via a specialized dual pulsed nozzle source. The light from an ArF excimer laser (193 nm, 23 ns FWHM) is focused into the mixing and reaction region of the nozzle source, and the products are then mass analyzed with a quadrupole mass spectrometer. Efficient laser-assisted growth of (GaN)x-containing clusters is shown with this technique.

scholarly journals Prevention of Reversed Flow in Gas Divertor with High Vacuum Chamber

2000 ◽  
Vol 37 (6) ◽  
pp. 555-556 ◽  
Author(s):  
Akihiro MATSUBARA ◽  
Ryoichiro MURATA ◽  
Ken NAGATA ◽  
Takehisa SHIBUYA ◽  
Akira TONEGAWA ◽  
...  
Keyword(s):  
Vacuum Chamber ◽  
High Vacuum ◽  
Reversed Flow ◽  
High Vacuum Chamber
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