Excimer Laser-Induced Surface Activation of Aln for Electroless Metal Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Hilmar Esrom
Keyword(s):  
Surface Modification ◽  
Excimer Laser ◽  
Wavelength Dependence ◽  
Metal Deposition ◽  
Surface Activation ◽  
Threshold Fluence ◽  
Metal Coatings ◽  
Metal Plating ◽  
Electroless Metal Plating ◽  
Excimer Laser Radiation

ABSTRACTA new method for selective metal deposition on aluminum nitride (AIN) is presented. Excimer laser radiation is used for local decomposition of AIN in air. The degree of the surface modification depends on the fluence and number of pulses. A distinct wavelength dependence of the threshold fluence decomposition of AIN was found. The irradiated surface regions act as catalysts in conventional electroless metal plating baths. Structured metal coatings of various elements (Cu, Ni, Au, Pd, etc.) on AIN can thus be obtained in a simple way.

Excimer laser-induced doping of crystalline silicon carbide films

1995 ◽  
Vol 10 (11) ◽  
pp. 2723-2727 ◽  
Author(s):  
S. Krishnan ◽  
G.C. D'Couto ◽  
M.I. Chaudhry ◽  
S.V. Babu
Keyword(s):  
Silicon Carbide ◽  
Surface Modification ◽  
Single Crystal ◽  
Excimer Laser ◽  
Boron Concentration ◽  
Crystalline Silicon ◽  
Threshold Fluence ◽  
Excimer Laser Radiation ◽  
Krf Excimer Laser ◽  
Sic Films

0.25 μm thick, single crystal, n-type, silicon carbide (β-SiC) films thermally grown on p-type Si(100) were doped with boron by using KrF excimer laser radiation and a spin-on dopant with a boron concentration of 1020/cm3. The threshold fluence for the doping to occur was approximately 0.08 J/cm2. Similarly, p-SiC/n-SiC diodes were fabricated by laser-induced doping of single-crystal β-SiC (n-type, 6 μm thick) films on n-type Si(100). The diodes obtained at 0.25 J/cm2 showed good rectifying characteristics. The threshold fluence for surface modification and/or ablation was approximately 0.3 J/cm2, indicating that doping and diode formation have to be accomplished within the fluence window of 0.08 J/cm2-0.3 J/cm2 for these films.

Excimer laser-induced surface activation of alumina for electroless metal deposition

1997 ◽  
Vol 109-110 ◽  
pp. 253-258 ◽  
Author(s):  
Jun-Ying Zhang ◽  
Ian W Boyd ◽  
Hilmar Esrom
Keyword(s):  
Excimer Laser ◽  
Metal Deposition ◽  
Surface Activation

Surface Modification of Polytetrafluoroethylene and the Deposition of Copper Films

1993 ◽  
Vol 304 ◽  
Author(s):  
Wenbiao Jiang ◽  
M. Grant Norton ◽  
J. Thomas Dickinson
Keyword(s):  
Surface Modification ◽  
Surface Morphology ◽  
Chemical Modification ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Polymer Surface ◽  
Metal Deposition ◽  
Copper Films ◽  
Charged Species ◽  
Significant Chemical

AbstractEnhancement of the adhesion of thin copper films on polytetrafluoroethylene substrates was found when the substrate surface was irradiated with a pulsed UV excimer laser prior to metal deposition. The interaction between the laser and the polymer was examined by characterizing the neutral and charged species emitted from the surface during irradiation. The nature of the species emitted indicates that significant chemical modification of the polymer surface occurs. In addition to chemical modification, the interaction with the laser also alters the surface morphology of the polymer. Irradiation at fluences of ∼ 0.6 J/cm2 results in an overall planarization of the surface, whilst irradiation at higher fluences results in the formation and enlargement of voids and localized melting.

UV Laser-Induced Metal Deposition on Semiconductors From Electroplating Solutions

1986 ◽  
Vol 75 ◽  
Author(s):  
Joseph Zahavi ◽  
Pehr E. Pehrsson
Keyword(s):  
Laser Radiation ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Pulse Energy ◽  
Metal Deposition ◽  
Uv Laser ◽  
Sample Characterization ◽  
Excimer Laser Radiation ◽  
193 Nm

AbstractWe have demonstrated metal deposition on semiconductors immersed in electroplating solution by exposure to UV laser radiation. N-type β-SiC and Si in gold or Pd/Ni electroplating solutions were exposed to 20 ns pulses of 193 nm or 248 nm excimer laser radiation. The energy per pulse was 20–100 mJ. Au and Pd/Ni metallizations deposited in lines and circles on SiC showed leaky Schottky barrier I-V characteristics. The thickness increased with increasing pulse energy or number. Both masked and maskless deposition were demonstrated without apparent damage to the substrate. Details of the process, potential mechanisms, and sample characterization are discussed.

Wettability characteristics of polyethylene modified with CO2, Nd:YAG, excimer and high-power diode lasers

2001 ◽  
Vol 215 (12) ◽  
pp. 1735-1744 ◽  
Author(s):  
J Lawrence ◽  
L Li
Keyword(s):  
Excimer Laser ◽  
High Power ◽  
Wavelength Dependence ◽  
Laser Surface ◽  
Laser Surface Treatment ◽  
Wetting Properties ◽  
Excimer Laser Radiation ◽  
Power Diode ◽  
High Power Diode Laser ◽  
Contrast Interaction

Interaction of CO2, Nd:YAG, excimer and high-power diode laser (HPDL) radiation with the surface of the biomaterial polyethylene (PE), was found to effect varying degrees of change to the wettability characteristics of the material depending upon the laser used. It was observed that interaction with CO2, Nd:YAG and HPDL effected very little change to the wettability characteristics of the PE. In contrast, interaction of the PE with excimer laser radiation resulted in a marked improvement in the wettability characteristics. After excimer laser treatment, the surface O2 content was found to have increased and the material was seen to be more polar in nature, resulting in a significant increase in the wettability characteristics. The work has shown that the wettability characteristics of the PE could be controlled and/or modified with laser surface treatment. However, a wavelength dependence of the change in the wetting properties could not be deduced from the findings of this work.

Photoablation and Surface Modification of Polymers with the Excimer Laser Radiation

1994 ◽  
pp. 201-219 ◽  
Author(s):  
Sylvain Lazare ◽  
Pascale Benet ◽  
Weiping Guan ◽  
Matthias Bolle ◽  
Stephen Mihailov
Keyword(s):  
Surface Modification ◽  
Laser Radiation ◽  
Excimer Laser ◽  
Excimer Laser Radiation
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