Lattice Relaxation of Eras/Gaas: An X-Ray Scattering Study

1990 ◽  
Vol 202 ◽  
Author(s):  
P. F. Miceli ◽  
K. W. Moyers ◽  
C. J. Palmstrøm
Keyword(s):  
Lattice Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
X Ray ◽  
X Ray Scattering ◽  
Ideal System ◽  
Out Of Plane ◽  
Scattering Study ◽  
Interference Oscillations ◽  
Ray Scattering

ABSTRACTThe results of a high resolution x-ray scattering study of [001]ErAs epitaxial layers grown on [001]GaAs is presented. ErAs is pseudomorphic on GaAs for thicknesses below 70Å and, for thicker films, lattice relaxation is oberved concomitant with an Increase of the In-plane mosaic due to the formation of misfit dislocations. Above 300Å, the out-of-plane transverse scattering from the ErAs lattice planes Is no longer specular and further relaxation Is related to the out-of-plane mosaic. The ratio of elastic constants, C12/C11, Is determined to be 0.126 and the thermal expansion was measured. Thin film Interference oscillations are observed and modeled. ErAs/GaAs Is an Ideal system for x-ray scattering studies of lattice relaxation and structure in epitaxial layers. Films as thin as 20Å have been studied.

X‐ray scattering study of lattice relaxation in ErAs epitaxial layers on GaAs

1991 ◽  
Vol 58 (15) ◽  
pp. 1602-1604 ◽  
Author(s):  
P. F. Miceli ◽  
C. J. Palmstro/m ◽  
K. W. Moyers
Keyword(s):  
Lattice Relaxation ◽  
Epitaxial Layers ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

Synchrotron x-ray Scattering Study on Oxidation of AIN/Sapphire

1999 ◽  
Vol 590 ◽  
Author(s):  
H. C. Kang ◽  
S. H. Seo ◽  
D. Y. Noh
Keyword(s):  
Domain Size ◽  
Film Plane ◽  
Atomic Concentration ◽  
X Ray ◽  
X Ray Scattering ◽  
Nano Crystalline ◽  
Out Of Plane ◽  
Plane Direction ◽  
Scattering Study ◽  
Ray Scattering

ABSTRACTWe present an x-ray scattering study of the oxidation of AIN/sapphire films into λ-A12O3 upon annealing. Epitaxial AIN/Sapphire(0001) transforms into nano-crystalline epitaxial λ-A12O3 during annealing at temperatures above 800°C in air. The crystalline orientational relation between the λ-Al2O3 and AIN are < 111 > // < 0001 > in the film normal direction, and < 110 > // < 1120 > in the film plane direction. The domain size of the spinel λ-A1203 crystalline is smaller than 50 Å in both out-of-plane and in-plane directions. The XPS depth profiles of the oxide film showed that the film is composed of aluminum and oxygen, and the atomic concentration ratio is about 2:3.

Diffuse x‐ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content

1995 ◽  
Vol 78 (8) ◽  
pp. 5013-5021 ◽  
Author(s):  
V. Holý ◽  
J. H. Li ◽  
G. Bauer ◽  
F. Schäffler ◽  
H.‐J. Herzog
Keyword(s):  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

An X-ray Scattering Study of Laterally Modulated Structures: Investigation of Coherence and Resolution Effects with a Grating

1996 ◽  
Vol 6 (8) ◽  
pp. 1085-1094 ◽  
Author(s):  
A. Gibaud ◽  
J. Wang ◽  
M. Tolan ◽  
G. Vignaud ◽  
S. K. Sinha
Keyword(s):  
X Ray ◽  
X Ray Scattering ◽  
Modulated Structures ◽  
Scattering Study ◽  
Ray Scattering

Evolution of Pore Ordering during Anodizing of Aluminum Single Crystals: In Situ Small-Angle X-ray Scattering Study

2021 ◽  
Author(s):  
Ilya V. Roslyakov ◽  
Andrei P. Chumakov ◽  
Andrei A. Eliseev ◽  
Alexey P. Leontiev ◽  
Oleg V. Konovalov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Small Angle ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

scholarly journals Model-Independent X-Ray Scattering Study of a Silica Sol Surface

JETP Letters ◽  
2018 ◽  
Vol 107 (6) ◽  
pp. 384-389 ◽  
Author(s):  
A. M. Tikhonov ◽  
V. E. Asadchikov ◽  
Yu. O. Volkov ◽  
B. S. Roshchin ◽  
V. Honkimäki ◽  
...  
Keyword(s):  
Silica Sol ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Model Independent ◽  
Ray Scattering
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