Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth

2002 ◽  
Vol 92 (10) ◽  
pp. 5814-5818 ◽  
Author(s):  
Ik Jae Lee ◽  
Jin Woo Kim ◽  
Yoon-Hwae Hwang ◽  
Hyung-Kook Kim
1990 ◽  
Vol 202 ◽  
Author(s):  
P. F. Miceli ◽  
K. W. Moyers ◽  
C. J. Palmstrøm

ABSTRACTThe results of a high resolution x-ray scattering study of [001]ErAs epitaxial layers grown on [001]GaAs is presented. ErAs is pseudomorphic on GaAs for thicknesses below 70Å and, for thicker films, lattice relaxation is oberved concomitant with an Increase of the In-plane mosaic due to the formation of misfit dislocations. Above 300Å, the out-of-plane transverse scattering from the ErAs lattice planes Is no longer specular and further relaxation Is related to the out-of-plane mosaic. The ratio of elastic constants, C12/C11, Is determined to be 0.126 and the thermal expansion was measured. Thin film Interference oscillations are observed and modeled. ErAs/GaAs Is an Ideal system for x-ray scattering studies of lattice relaxation and structure in epitaxial layers. Films as thin as 20Å have been studied.


1991 ◽  
Vol 58 (15) ◽  
pp. 1602-1604 ◽  
Author(s):  
P. F. Miceli ◽  
C. J. Palmstro/m ◽  
K. W. Moyers

1996 ◽  
Vol 6 (8) ◽  
pp. 1085-1094 ◽  
Author(s):  
A. Gibaud ◽  
J. Wang ◽  
M. Tolan ◽  
G. Vignaud ◽  
S. K. Sinha

Author(s):  
Ilya V. Roslyakov ◽  
Andrei P. Chumakov ◽  
Andrei A. Eliseev ◽  
Alexey P. Leontiev ◽  
Oleg V. Konovalov ◽  
...  

JETP Letters ◽  
2018 ◽  
Vol 107 (6) ◽  
pp. 384-389 ◽  
Author(s):  
A. M. Tikhonov ◽  
V. E. Asadchikov ◽  
Yu. O. Volkov ◽  
B. S. Roshchin ◽  
V. Honkimäki ◽  
...  

2015 ◽  
Vol 84 (8) ◽  
pp. 084701 ◽  
Author(s):  
Koji Kimura ◽  
Kazuhiro Matsuda ◽  
Nozomu Hiraoka ◽  
Yukio Kajihara ◽  
Tetsu Miyatake ◽  
...  

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