Initial Stages of Molecular Beam Epitaxical Growth of Highly Strained Inxga1-XAs on Gaas (100)

1990 ◽  
Vol 202 ◽  
Author(s):  
S. Guha ◽  
A. Madhukar ◽  
R. Kapre ◽  
K. C. Rajkumar
Keyword(s):  
Electron Microscopy ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Direct Evidence ◽  
Electrical Characteristics ◽  
Growth Morphology ◽  
Tunneling Diode ◽  
Transmission Electron ◽  
Highly Strained

ABSTRACTWe have studied the initial stages of highly mismatched InxGa1-x As growth on GaAs (100) by transmission electron microscopy (TEM). We find direct evidence of (i) deformation in the substrate below each island to depths of about 150 A and (ii) strain relief in the islands at their lateral edges. Growth morphology as a function of growth temperature is studied and it is found that the tendency for islanding for x as high as 0.5 can be supressed to a large extent by a reduction in the growth temperature. We also present results of correlation between TEM determined different growth morphologies (brought about by different growth temperatures ) and the electrical characteristics of AlAs/InxGa1-xAs resonant tunneling diode structures grown on GaAs (100).

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

1993 ◽  
Vol 312 ◽  
Author(s):  
X. C. Zhou ◽  
J. Jiang ◽  
A. Y. Du ◽  
J. W. Zhao ◽  
S. M. Mu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Direct Evidence ◽  
Surface Strain ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Transmission Electron ◽  
Gaas Films ◽  
Reflection Electron Microscopy

AbstractUsing reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.

Growth of CuInS2 Films on Crystalline Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
R. Hunger ◽  
R. Scheer ◽  
M. Alt ◽  
H. J. Lewerenz
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Molecular Beam ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

AbstractCuInS2 films were grown by molecular beam epitaxy (MBE) on hydrogen terminated Si(111) substrates with 4° miscut. X-ray diffraction (XRD) texture analysis reveals that CuInS2 was grown heteroepitaxially with the epitaxial relationships CuInS2(112) II Si(111) and [111] II [111]. Moreover, a substantial amount of rotational twins is observed. The crystalline order is maintained across the interface as observed by cross-sectional transmission electron microscopy (XTEM). XRD and scanning electron microscopy (SEM) investigations show that nonstoichiometric preparation greatly influences the growth morphology and leads to the formation of secondary phases.

Strain-Induced Elevation of the Spontaneous Polarization in BaTiO3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
W. Tian ◽  
J. H. Haeni ◽  
D. G. Schlom ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Spontaneous Polarization ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Misfit Dislocations ◽  
Static Displacement ◽  
Transmission Electron ◽  
Highly Strained

AbstractA manmade ferroelectric-paraelectric heterostructure, a BaTiO3 / SrTiO3 superlattice, was studied to explore the effect of strain on ferroelectricity. An atomically abrupt BaTiO3 / SrTiO3 superlattice was grown on a (001) SrTiO3 substrate by reactive molecular beam epitaxy. Both BaTiO3 and SrTiO3 layers were grown with their individual thicknesses less than the critical thickness for the formation of interfacial misfit dislocations, leaving the entire superlattice fully coherent with the substrate. This resulted in a uniformly and highly strained BaTiO3 layer to study the effect of strain on ferroelectricity. Quantitative high-resolution transmission electron microscopy was employed to examine the atomic positions of cations and anions in the strained BaTiO3 layers. It was found that the relative static displacement of cations (Ti4+, Ba2+) to anions (O2−) is larger than that of bulk BaTiO3. Our observation thus illustrates the strain-induced elevation of spontaneous polarization in BaTiO3 thin films.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Elastic Constant ◽  
Structural Properties ◽  
Molecular Beam ◽  
Self Organization ◽  
Transmission Electron ◽  
2D Model

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.

Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Richard J. Dalby ◽  
John Petruzzello
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Expansion ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Sulfur Concentration ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Superlattice Layer

ABSTRACTOptical and transmission electron microscopy have been used to study cracks appearing in ZnSe/ZnSxSe1−x (x ∼ 0.38) superlattices grown by Molecular Beam Epitaxy. It Is shown that when a fracture occurs it is confined, in most cases, to the superlattice and propagates along <011> cleavage directions in these <001> oriented epilayers. Cracks were not observed in all superlattices and their onset is discussed in relation to sulfur concentration, overall superlattice height, individual superlattice layer thicknesses, and stress, tensile or compressive, due to lattice mismatch and thermal expansion differences between buffer layer and superlattice. It was found that by adjusting the controllable parameters, cracks in the superlattices could be eliminated. Orientation and density of these features have been related to asynnmetric cracking associated with the zincblende structure of these II-VI materials. Experimental results are shown to be in agreement with theoretical predictions of critical heights for the onset of cracking.

Optimization of Molecular Beam Epitaxy Conditions of Resonant Tunneling Diode Photodetector

2015 ◽  
Vol 42 (8) ◽  
pp. 0817001
Author(s):  
董宇 Dong Yu ◽  
王广龙 Wang Guanglong ◽  
倪海桥 Ni Haiqiao ◽  
陈建辉 Chen Jianhui ◽  
乔中涛 Qiao Zhongtao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode
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