Schottky Properties of Tungsten Compounds Refractory Contacts on n-GaAs Fabricated by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
C. S. Park ◽  
J. S. Lee ◽  
J. W. Lee ◽  
J. Y. Kang ◽  
J. Y. Lee
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Gaas Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Ion Beam Assisted Deposition ◽  
Thermal Stability Of

AbstractA low energy ion beam assisted deposition (IBAD) technique has been developed to fabricate refractory W-Si-N films for the application to gate electrode of GaAs metal-semiconductor field effect transistors( MESFETs ). Thermal stability of the IBAD refractory metal/n-GaAs interface was investigated by examining the microstructure and Schottky diode characteristics. The Schottky barrier heights of 0.71, 0.84, and 0.76 eV were obtained after thermal annealing at 850°C for the W/, WN0.27/, and WSi0.3N0.4/GaAs diodes, respectively, and these values are comparable to those of the best results published with conventional reactive sputtering. While some crystalization of the deposit and reaction between film and substrate at the interface were observed with TEM for the W/ and WN/GaAs contacts annealed at 800°, the WSiN film remained amorphous and showed clear interface with the GaAs substrate without significant morphological change. The WS0.3N0.4/GaAs diode showed good thermal stability of Schottky barrier heights with only 20 meV variation in the temperature range between 700 and 850°C, and that is proposed to be due to the stable microstructure.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

Enhancing the Thermal Stability of Organic Field-Effect Transistors by Electrostatically Interlocked 2D Molecular Packing

2018 ◽  
Vol 30 (11) ◽  
pp. 3638-3642 ◽  
Author(s):  
Zhi-Ping Fan ◽  
Xiang-Yang Li ◽  
Geoffrey E. Purdum ◽  
Chen-Xia Hu ◽  
Xian Fei ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Packing ◽  
Organic Field Effect Transistors ◽  
Thermal Stability Of

scholarly journals Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4140
Author(s):  
Maksym Dub ◽  
Pavlo Sai ◽  
Aleksandra Przewłoka ◽  
Aleksandra Krajewska ◽  
Maciej Sakowicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Subthreshold Slope ◽  
Subthreshold Current ◽  
Barrier Heights ◽  
Order Of Magnitude

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.

Thermal stability of sectorial split-drain magnetic field-effect transistors

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1115-1118 ◽  
Author(s):  
Wing-Shan Tam ◽  
Chi-Wah Kok ◽  
Sik-Lam Siu ◽  
Wing-Man Tang ◽  
Chi-Wah Leung ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thermal Stability ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Thermal Stability Of

scholarly journals Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashish V. Penumatcha ◽  
Ramon B. Salazar ◽  
Joerg Appenzeller
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Barrier Heights ◽  
Substitutional Doping ◽  
Low Dimensional ◽  
Schottky Barrier Mosfet

Abstract Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Sign in / Sign up

Export Citation Format

Share Document