Growth and Properties of Ceramic thin Films Processed by In-Situ Laser Deposition Technique

1990 ◽  
Vol 201 ◽  
Author(s):  
S. M. Kanetkar ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Matera ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Atomic Scale ◽  
Crystal Silicon ◽  
Ceramic Thin Films ◽  
Deposition Parameters ◽  
Transmission Electron

AbstractGood quality ceramic thin films of yttria-stabilized zirconia (YSZ), MgO, BN and TiN were grown on single crystal silicon with (100) orientation using in-situ pulsed laser physical vapor deposition (LPVD) technique.Laser deposition parameters were optimized and the resulting thin films were characterized by X-ray diffraction ,Rutherford backscattering spectrometry and transmission electron microscopy (plan and cross section). All the films were found to be polycrystalline with a texture. The absence of interfacial reaction and smooth interface on the atomic scale are the main features observed in these oxides and nitrides thin films on Si (100) substrate.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

Dynamic Atomic Mechanisms of Plasticity of Ni Nanowires and Nano Crystalline Ultra-Thin Films

2010 ◽  
Vol 654-656 ◽  
pp. 2293-2296 ◽  
Author(s):  
Xiao Dong Han ◽  
Li Hua Wang ◽  
Pan Liu ◽  
Yong Hai Yue ◽  
Ming Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Large Strain ◽  
Atomic Scale ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
Strain Plasticity ◽  
Large Strain Plasticity ◽  
Microscopy Techniques ◽  
Mechanisms Of Plasticity

Using our recently developed in situ transmission electron microscopy techniques, we revealed that the FCC structured Ni nanowires with diameter of about 30 nm possess ultra-large strain plasticity. Dynamic complex dislocation activities mediated the large strain bent-plasticity and they were monitored at atomic scale in real time. The bent-induced strain gradient allows studying the strain effects on dislocation mediated plasticity. We also explored the deformation techniques to more general cases, the nano thin films. An example of tensile Pt ultra-thin film is presented.

Interfacial Strain Reliefs in Epitaxial YBa2Cu3O7–δ Thin Films Grown on SrTiO3 Buffered MGO Substrates

1997 ◽  
Vol 505 ◽  
Author(s):  
Xingtian Cui ◽  
Q. Y Chen ◽  
Yongxiang Guo ◽  
W. K. Chu
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Epitaxial Thin Films ◽  
Cross Sectional ◽  
Ybco Films ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Edge Dislocations

ABSTRACTHigh quality YBa2Cu3O7–δ, (YBCO) epitaxial thin films grown on MgO substrate with a strainrelieved SrTiO3 (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

1992 ◽  
Vol 260 ◽  
Author(s):  
Amol Kirtikar ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Phase Transformations ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Titanium Thin Films ◽  
Sputter Deposited ◽  
Titanium Silicon ◽  
Silicon Interface

ABSTRACTThe interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

Ceramic Thin Films on Organic Self-Assembled Monolayers: Synthesis and the Mechanism of Formation

1999 ◽  
Vol 599 ◽  
Author(s):  
U. Sampathkumaran ◽  
S. Supothina ◽  
R. Wang ◽  
M. R. De Guire
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Surface Preparation ◽  
Inorganic Materials ◽  
Self Assembled Monolayers ◽  
Crystal Silicon ◽  
Ceramic Thin Films ◽  
Assembled Monolayers ◽  
Self Assembled

AbstractIn recent years, several research groups have pursued biomimetic or bio-inspired techniques for the synthesis of ceramic thin films from aqueous solutions at low temperatures. The substrates range from inorganic materials (metals, glass, single-crystal silicon) without special surface preparation, to functionalized organic surfaces such as self-assembled organic monolayers (SAMs). Our results on the deposition of tin (IV) oxide (SnO2, cassiterite) and hydroxyapatite (Ca10(PO4)6(OH)2) thin films on SAMs will be reviewed. The former system forms films via assembly of nano-scale particles on the substrate, while the latter system appears to form films via heterogeneous nucleation. In both cases, the role of the substrate in film formation is discussed.

UHV-TEM imaging of surface reconstructions in B-doped Si

1991 ◽  
Vol 49 ◽  
pp. 618-619
Author(s):  
T. S. Savage ◽  
R. Ai ◽  
L. D. Marks
Keyword(s):  
High Vacuum ◽  
Single Crystal Silicon ◽  
Ultra High Vacuum ◽  
Limiting Factor ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Surface Reconstructions ◽  
Northwestern University ◽  
Reconstructed Surface

A variety of techniques including LEED, STM and RHEED have been used to study surface reconstructions on the silicon <111> surface. Additionally, ultra high vacuum-transmission electron microscopy (UHV-TEM) has been used for a limited number of studies most notably on the 7x7 reconstructed surface. The limiting factor in these studies has been the availability of microscopes capable of in-situ sample preparation and imaging in a UHV environment. The Hitachi UHV-H9000 located at Northwestern University has recently been used to observe several surface reconstructions on a single crystal silicon <111> thin film. Transmission electron diffraction (TED) patterns were obtained for 7x7, and 5x1 surface reconstructions.

Temperature Effects on Internal Stress in Molybdenum Thin Films on Single-Crystal Silicon Substrates

1982 ◽  
Vol 18 ◽  
Author(s):  
Jiann-Ruey Chen ◽  
Ching-Hung Ho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Lower Annealing Temperature ◽  
Spectrometry Technique

Molybdenum thin films were deposited with an electron beam gun onto (100)- oriented silicon substrates. The samples were then annealed in vacuum, and the internal stresses in the molybdenum thin films were studied as functions both of the annealing temperature and of the substrate temperature during deposition. Silicide formation and the film thickness after annealing were monitored by the Rutherford backscattering spectrometry technique, and the stress was determined from the substrate curvature which was measured from Newton's ring interference fringes. It was found that, when the substrate temperature was kept at 400°C during deposition, MoSi2 was formed after annealing at temperatures above 500 °C. This MoSi2 exhibited large tensile stresses of about 2 × 1010 dyn cm−2 for annealing above 700 °C, whereas at the lower annealing temperature of 500 °C the stresses were compressive. No detectable silicides were observed when the substrates were kept at temperatures below 150 °C. The Mo-Si film stresses were tensile for substrates kept at room temperature during deposition and compressive for substrates kept at 150 °C.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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