Temperature Effects on Internal Stress in Molybdenum Thin Films on Single-Crystal Silicon Substrates

1982 ◽  
Vol 18 ◽  
Author(s):  
Jiann-Ruey Chen ◽  
Ching-Hung Ho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Lower Annealing Temperature ◽  
Spectrometry Technique

Molybdenum thin films were deposited with an electron beam gun onto (100)- oriented silicon substrates. The samples were then annealed in vacuum, and the internal stresses in the molybdenum thin films were studied as functions both of the annealing temperature and of the substrate temperature during deposition. Silicide formation and the film thickness after annealing were monitored by the Rutherford backscattering spectrometry technique, and the stress was determined from the substrate curvature which was measured from Newton's ring interference fringes. It was found that, when the substrate temperature was kept at 400°C during deposition, MoSi2 was formed after annealing at temperatures above 500 °C. This MoSi2 exhibited large tensile stresses of about 2 × 1010 dyn cm−2 for annealing above 700 °C, whereas at the lower annealing temperature of 500 °C the stresses were compressive. No detectable silicides were observed when the substrates were kept at temperatures below 150 °C. The Mo-Si film stresses were tensile for substrates kept at room temperature during deposition and compressive for substrates kept at 150 °C.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Effects of Interlayers on the Scratch Adhesion Performance of Ultra-Thin Films of Copper and Gold on Silicon Substrates

1994 ◽  
Vol 356 ◽  
Author(s):  
S. D. McAdams ◽  
T. Y. Tsui ◽  
W. C. Oliver ◽  
G. M. Pharr
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Scratch Testing ◽  
Crystal Silicon ◽  
Testing Apparatus ◽  
Low Load ◽  
Adhesion Performance ◽  
Made In

AbstractScratch testing has long been used to assess the adhesion of a film to its substrate. As film thicknesses have decreased, the need for greater precision and sensitivity in the scratch testing apparatus has increased. To this end, a nanoindenter was modified to make finely controlled, low-load scratches. Scratches at various loads and two orientations of a Berkovich scratching diamond were made in films of 100 nm of gold and 200 nm of copper, each on single crystal silicon. For each film type, samples with no interlayer, with an SiO2 interlayer, and with a TiW on SiO2 interlayer were tested. The scratch morphology was found to vary in a regular way with load, diamond orientation and interlayer material.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon

1981 ◽  
Vol 10 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara
Keyword(s):  
Substrate Temperature ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Optimum Conditions ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures were prepared by conventional vacuum evaporation of CaF2 and silicon onto silicon substrates. The optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition. From Rutherford backscattering and channelling spectroscopy it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600– 800°C, 800°C and 500–600°C respectively. It was also found from Rutherford backscattering and channelling spectroscopy and from transmission electron microscopy that single-crystal silicon films are formed on a CaF2/Si(111) structure at a substrate temperature of 700°C. From measurements of the electrical properties of the top silicon film after the implantation of phosphorus ions at 2 ×1015 cm−2 and subsequent annealing at 750°C, an electron Hall mobility of 69cm2 V−1 s−1 was obtained.

High Hf Content NITIHF Shape Memory Films

1999 ◽  
Vol 604 ◽  
Author(s):  
Chen Zhang ◽  
Paul E. Thoma ◽  
Ralph Zee
Keyword(s):  
Heat Treatment ◽  
Substrate Temperature ◽  
Heat Treatment Temperature ◽  
Single Crystal Silicon ◽  
Treatment Temperature ◽  
Silicon Substrates ◽  
Scanning Calorimetry ◽  
Free Standing ◽  
Crystal Silicon ◽  
Transformation Temperatures

AbstractPolycrystalline NiTiHf films with around 9at% Hf have been successfully deposited from a single NiTiHf target using a DC magnetron sputtering system. Free standing films were obtained by depositing the films on single crystal silicon substrates. Thickness of the films was controlled between 10-12µm. In this investigation, the effects of deposition temperature on the crystallinity and transformation temperatures of the films were studied. Substrate temperature during deposition was varied between 300°C and 700°C at 100°C intervals. The influence of heat treatment temperature on the properties of the films was also investigated. The heat treatment temperature was between 300°C and 800°C at 100° C intervals. Transformation temperatures of these films were determined by differential scanning calorimetry (DSC). The crystallinity was determined using x-ray diffractometry. It was found that all the as-deposited films were crystalline even when the substrate temperature was as low as 300°C. Both martensite and austenite transformation temperatures increase with increasing substrate temperature and increasing heat treatment temperature.

Surface Evolution of NiTi and NiTiHf Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
Chen Zhang ◽  
Ralph H. Zee ◽  
Paul E. Thoma
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Deposition Temperature ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Surface Evolution ◽  
Post Deposition

AbstractThe microstructure evolution of Ti-rich NiTi thin films and (TiHf)-rich NiTiHf thin films containing 9at% Hf was investigated. These films were deposited from single NiTi and NiTiHf targets using a DC magnetron sputtering system. Free-standing films were obtained by using single crystal silicon substrates. The thickness of these films was controlled between 10-12 μm. In this investigation, the effects of deposition temperature on the surface and cross-sectional microstructures of these films were studied. Substrate temperature during deposition was varied between 300°C to 700°C at 100°C intervals. The influence of post deposition heat treatment (HT) temperature on the microstructure of these films was also studied. The post deposition HT temperature was varied between 300°C and 800°C at 100°C intervals. Both surface and cross- sectional microstructures were examined using a scanning electron microscope (SEM). The crystallinity and the phases present were determined using x-ray diffractometry. All the as- deposited films were found to be crystalline, even when the substrate temperature was as low as 300°C. Results from the microstructure analysis show that all the films have a relatively fine grain size ranging from 0.2 μm to 2.5 μm, and the grain size increases with increasing substrate deposition temperature. The effect of post deposition HT on grain size was found to be minimal.

TEM observations of the mechanism of delamination of chromium films from silicon substrates

1992 ◽  
Vol 7 (2) ◽  
pp. 359-366 ◽  
Author(s):  
D. Goyal ◽  
A.H. King
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Mechanical Failure ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Interfacial Defects ◽  
Chromium Films

We have observed the complete delamination of polycrystalline chromium films from single crystal silicon substrates during deposition due to the formation of high internal stresses. These intrinsic stresses can give rise to interfacial defects which assist in the separation of the film from the substrate. Stresses in the film are balanced by stresses in the substrate, which cause mechanical failure in the substrate near the interface. Extensive arrays of dislocations and cracking of the substrate have been observed. We find that the delamination of the films from the substrate is initiated by the formation of damage in the substrate, rather than to the film or the interface.

Growth and Properties of Ceramic thin Films Processed by In-Situ Laser Deposition Technique

1990 ◽  
Vol 201 ◽  
Author(s):  
S. M. Kanetkar ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Matera ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Atomic Scale ◽  
Crystal Silicon ◽  
Ceramic Thin Films ◽  
Deposition Parameters ◽  
Transmission Electron

AbstractGood quality ceramic thin films of yttria-stabilized zirconia (YSZ), MgO, BN and TiN were grown on single crystal silicon with (100) orientation using in-situ pulsed laser physical vapor deposition (LPVD) technique.Laser deposition parameters were optimized and the resulting thin films were characterized by X-ray diffraction ,Rutherford backscattering spectrometry and transmission electron microscopy (plan and cross section). All the films were found to be polycrystalline with a texture. The absence of interfacial reaction and smooth interface on the atomic scale are the main features observed in these oxides and nitrides thin films on Si (100) substrate.

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