Effect of Thermal Processing Conditions on Ferroelectric PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Chi K. Kwok ◽  
Seshu B. Desu ◽  
Lee Kammerdiner
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Surface Composition ◽  
Rf Sputtering ◽  
Single Crystal Silicon ◽  
Lead Zirconate ◽  
Crystal Silicon ◽  
Pyrochlore Type ◽  
Switching Characteristics ◽  
Anneal Temperature

ABSTRACTFerroelectric and transparent lead–zirconate–titanate thin films were fabricated by rf sputtering. The substrates used were Pt–coated single crystal silicon. The deposition temperatures were relatively low (≅ 200°C). Annealing at high temperatures yielded first pyrochlore type and finally perovskite with good switching characteristics. The phase structure, microstructure, surface composition, and properties were measured as a function annealing time and temperature. In general, the Pb concentration on the surface decreased with increasing annealing temperature or time, whereas Zr concentration increased. It was observed that the grain size of perovskite PZT did not show any significant changes with increasing either anneal temperature or time.

Characterization of Ferroelectric Thin Films by ESCA

1990 ◽  
Vol 200 ◽  
Author(s):  
Seshu B. Desu ◽  
Chi K. Kwok
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Electron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Lead Zirconate ◽  
Ferroelectric Films ◽  
Qualitative And Quantitative ◽  
Profiling Techniques

ABSTRACTElectron spectroscopy for chemical analysis (ESCA) is well suited for investigating the surfaces of ferroelectric films. More importantly, this technique is valuable for ferroelectric films because, reduction of ions, such as Pb2+, Bi3+, and Ti4+ by photon beam is much less likely than probing electron and ion beams which are used in other methods. In the present paper a brief description of the possibilities of ESCA for determining qualitative and quantitative surface composition, and thickness of extremely thin films was presented. Special emphasis was given to multicomponent films, such as lead zirconate titanate (PZT). Factors that lead to considerable difference in the composition of the surface were discussed. Different depth profiling techniques using ESCA were also presented.

scholarly journals The properties of lead titanate thin films produced by chemical vapour deposition

1996 ◽  
Vol 74 (9-10) ◽  
pp. 580-593 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Louise Weaver ◽  
Alison J. Clark
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Vapour Deposition ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Lead Zirconate ◽  
Pyrochlore Type ◽  
Major Factors

This project focused on advancing the knowledge of chemical vapour deposition (CVD) of lead titanate (PbTiO3) thin films for future work on lead zirconate titanate or PZT (PbZrxTi1−xO3) through an understanding of the structural, chemical, and electrical properties of the material. A low-pressure, low-temperature process for PbTiO3 was developed. The major factors in controlling the film composition and thickness uniformity were identified as substrate temperature and the partial pressures of the reactive gases. The formation sequence for CVD PbTiO3 films involved individual oxides of Ti and Pb, rather than pyrochlore-type phases. A Pb-rich composition ensured the formation of perovskite, however, it resulted in the formation of a thin PbOx surface layer. Removal of this layer by etching gave improved electrical properties. Capacitance measurements typically varied less than 1% over the frequency range and gave ε′ values from 60 to 155. At 1 kHz, tan ∂ was ~0.01 and the, resistivity was ~1011 Ω cm. Transmission electron microscopy examination of as-deposited films of PbTiO3 revealed no macrodomains existed. After post-deposition rapid thermal annealing (RTA), twinned structures, apparently acting as domains, were found in ~0.1 μm diameter grains. The multilayered bottom electrode of Pt and Ti used in this study was found to react at temperatures ≤ 515 °C. At higher RTA temperatures (698 °C), the Ti layer was completely consumed, however the top surface of the Pt layer remained unaffected.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

scholarly journals Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
Clemens Mart ◽  
Malte Czernohorsky ◽  
Kati Kühnel ◽  
Wenke Weinreich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Cost Effective ◽  
Atomic Layer ◽  
Lead Zirconate ◽  
Temperature Oscillation ◽  
Current Profile ◽  
Infrared Sensors ◽  
Integrated Sensor ◽  
Ferroelectric Hysteresis

Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally, CMOS integration allows for integrated sensor circuits, enabling scalable and cost-effective applications. In this work, we demonstrate the deposition of pyroelectric thin films on area-enhanced structured substrates via thermal atomic layer deposition. Scanning electron microscopy indicates a conformal deposition of the pyroelectric film in the holes with a diameter of 500 nm and a depth of 8 μm. By using TiN electrodes and photolithography, capacitor structures are formed, which are contacted via the electrically conductive substrate. Ferroelectric hysteresis measurements indicate a sizable remanent polarization of up to 331 μC cm−2, which corresponds to an area increase of up to 15 by the nanostructured substrate. For pyroelectric analysis, a sinusoidal temperature oscillation is applied to the sample. Simultaneously, the pyroelectric current is monitored. By assessing the phase of the measured current profile, the pyroelectric origin of the signal is confirmed. The devices show sizable pyroelectric coefficients of −475 μC m−2 K−1, which is larger than that of lead zirconate titanate (PZT). Based on the experimental evidence, we propose Hf1−xZrxO2 as a promising material for future pyroelectric applications.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate
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