Size Effects in Sputtered PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Seshu B. Desu ◽  
Chien H. Peng ◽  
Lee Kammerdiner ◽  
Paul J. Schuele
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Size Effects ◽  
Ferroelectric Properties ◽  
Critical Discussion ◽  
Pzt Thin Films ◽  
Individual Contributions ◽  
Crystallite Dimension ◽  
Switching Characteristics ◽  
The Individual

ABSTRACTThe ferroelectric properties and switching characteristics of rf sputtered PZT thin films were investigated as a function of film thickness (30–300 nm) and grain size. Electron microscopy was used to characterize the film microstructure. The film thickness was measured by ellipsometer. The results were analyzed for the individual contributions of film thickness and crystallite dimension to the size effects on the properties of ferroelectric thin films. A critical discussion of several different models describing the size effects was also presented.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Growth behavior and ferroelectric properties of Zr-rich PZT thin films deposited on various Pt electrodes

1999 ◽  
Vol 23 (1-4) ◽  
pp. 65-75 ◽  
Author(s):  
Suk-Kyoung Hong ◽  
Yong Eui Lee ◽  
J. Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Growth Behavior ◽  
Pzt Thin Films ◽  
Pt Electrodes

Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films

2021 ◽  
Author(s):  
Yu Zhao ◽  
Wen-Yue Zhao ◽  
Dan-Dan Ju ◽  
Yue-Yue Yao ◽  
Hao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Recovery Effect ◽  
Pzt Thin Films ◽  
Irradiation Behavior

Effect of Pyrolytic Film Thickness on the Texture Evolution of PZT Thin Films

2015 ◽  
Vol 159 (1) ◽  
pp. 108-113 ◽  
Author(s):  
Wenhao Wang ◽  
Lisha Zhi ◽  
Jingning Han ◽  
Wencai Xu ◽  
Yongli Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Texture Evolution ◽  
Pzt Thin Films ◽  
Pyrolytic Film

Evolution Of Crystalline Microstructure in GeTe Thin Films for Optical Storage Applications

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Libera
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Optical Storage ◽  
Microstructural Development ◽  
Multilayered Media ◽  
Time Resolved ◽  
Constant Rate ◽  
Individual Contributions ◽  
The Individual ◽  
Transmission Studies

ABSTRACTThe bit-erase process in phase-change optical storage is based on the amorphous to crystalline transformation. While there has been significant progress developing compositions and multilayered media for phase-change applications, quantitative studies of the crystallization kinetics and microstructural development are generally lacking. This paper describes work quantifying crystallization in GeTe thin films. Microstructural changes during isothermal annealing are measured using in-situ hot-stage optical microscopy. This technique measures the fraction crystallized, the number of crystallites, and crystallite radii as a function of time. These data are sufficient to deconvolute the individual contributions of nucleation and growth. We find an Avrami exponent of ∼4, consistent with time-resolved reflection/transmission studies. This exponent is due to 2-D growth at a constant rate plus transient nucleation. The data are used in a kinetic model to simulate non-isothermal crystallization during focused-laser heating characteristic of the bit-erase process.

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