Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy

1980 ◽  
Vol 2 ◽  
Author(s):  
W. Krakow ◽  
T.Y. Tan ◽  
H. Foell
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Point Defect ◽  
Image Matching ◽  
Imaging Study ◽  
High Resolution Electron Microscopy ◽  
Structure Model ◽  
Lattice Imaging ◽  
Resolution Electron ◽  
Chain Type

ABSTRACTIn a lattice imaging study of As+ ion damaged Si, we have detected =110> chain type defects which are not associated with any significant strain or configurational changes. By image matching of the experimental and calculated micrographs of vacancies and interstitials, it is established that about 100% more interstitial atoms may incorporate into a defective chain. A structure model of this defect is proposed wherein a di-interstitial, occupying the =100> split position, is incorporated into every available site along a =110> chain.

Direct structure analysis of advanced nanomaterials by high-resolution electron microscopy

2012 ◽  
Vol 1 (5) ◽  
pp. 389-425 ◽  
Author(s):  
Takeo Oku
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Nanostructured Materials ◽  
Structure Analysis ◽  
Incident Beam ◽  
High Resolution Electron Microscopy ◽  
Structure Model ◽  
Resolution Electron ◽  
Correction Technique ◽  
Resolution Imaging

AbstractHigh-resolution electron microscopy (HREM) analysis has contributed to the direct structure analysis of advanced nanostructured materials, of which the properties of these materials are strongly dependent on the atomic arrangements. In the present article, the direct structure analysis of nanostructured materials such as boride and oxide materials was described and the high-resolution imaging methods were applied to boron nitride nanomaterials such as nanotubes and nanoparticles. An aberration correction technique is also expected as an advanced nanostructure analysis with higher resolution. The HREM image of TlBa2Ca3Cu4O11 was taken with the incident beam parallel to the a axis together with a structure model after image processing.

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

High Resolution Electron Microscopy of Grain Boundaries in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
B. Cunningham ◽  
D. Ast
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Imaging Technique ◽  
Coincidence Site Lattice ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Lattice Imaging ◽  
Site Lattice ◽  
Resolution Electron

ABSTRACTThe lattice imaging technique has been used to study grain boundaries in annealed, chemically vapor deposited (CVD) silicon. The majority of the grain boundaries are Σ*=3, 9 or 27, i.e. they are all twin related, and have boundary planes which coincide with high density planes of the appropriate coincidence site lattice (CSL). Asymmetric Σ=27 boundaries are found to be dissociated on an atomic scale into faceted Σ=3 boundaries and Σ=9 boundaries. No dissociation of the Σ=27 boundaries is observed when the boundary planes are symmetric.

Crystal structure of HgTlBa2CuOx studied by high-resolution electron microscopy

1998 ◽  
Vol 13 (5) ◽  
pp. 1136-1140 ◽  
Author(s):  
Takeo Oku ◽  
Satoru Nakajima
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxygen Vacancies ◽  
Layer Structure ◽  
High Resolution Electron Microscopy ◽  
Structure Model ◽  
Double Layer Structure ◽  
Resolution Electron ◽  
Residual Values ◽  
The Stability

The structure model for HgTlBa2CuOx was proposed from high-resolution electron microscopy using residual indices. Averaged digital high-resolution image of the HgTlBa2CuOx showed the existence of separated Hg layers and oxygen vacancies in the double (Hg, Tl) layers. Image calculations based on the proposed structure model of HgTlBa2CuO5 agreed well with the observation, and showed low residual values. The present result indicates the stability of the (Hg, Tl) double layer structure would be due to the formation of oxygen vacancies in the Hg layers.

Structural analysis of the surface-layer protein of spirillum serpens by high-resolution electron microscopy

1983 ◽  
Vol 41 ◽  
pp. 738-739
Author(s):  
W. H. Wu ◽  
R. M. Glaeser
Keyword(s):  
Electron Microscopy ◽  
Surface Layer ◽  
Structural Analysis ◽  
High Resolution ◽  
Low Dose ◽  
High Resolution Electron Microscopy ◽  
Optical Diffraction ◽  
Surface Layer Protein ◽  
Morphological Unit ◽  
Resolution Electron

Spirillum serpens possesses a surface layer protein which exhibits a regular hexagonal packing of the morphological subunits. A morphological model of the structure of the protein has been proposed at a resolution of about 25 Å, in which the morphological unit might be described as having the appearance of a flared-out, hollow cylinder with six ÅspokesÅ at the flared end. In order to understand the detailed association of the macromolecules, it is necessary to do a high resolution structural analysis. Large, single layered arrays of the surface layer protein have been obtained for this purpose by means of extensive heating in high CaCl2, a procedure derived from that of Buckmire and Murray. Low dose, low temperature electron microscopy has been applied to the large arrays.As a first step, the samples were negatively stained with neutralized phosphotungstic acid, and the specimens were imaged at 40,000 magnification by use of a high resolution cold stage on a JE0L 100B. Low dose images were recorded with exposures of 7-9 electrons/Å2. The micrographs obtained (Fig. 1) were examined by use of optical diffraction (Fig. 2) to tell what areas were especially well ordered.

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