Lattice imaging by high resolution electron microscopy: The role of high resolution electron microscopy in solid state chemistry

Mg–Ti–spinel formation along the interface of epitaxial TiN(100) films to MgO(100) substrates has recently been investigated by transmission electron microscopy (TEM) in the diffraction-contrast mode in samples grown at substrate temperatures higher than 800 °C and in such post-annealed at 850 °C. This phenomenon has now been investigated by high resolution electron microscopy of cross-sectional samples, at an acceleration voltage of 300 kV. Emphasis is given to the TiN/spinel and the spinel/MgO interfaces with respect to their structure and morphology. The results obtained confirm the previously drawn conclusions on the atomic mechanism of the solid state reaction during the spinel-forming process: The spinel, which most likely is of the composition Mg2TiO4, forms by counterdiffusion of the cations Ti4+ and Mg2+ in the rigid oxygen frame provided by the fcc oxygen sublattice of MgO. The latter is completely taken over by the spinel lattice. This “host” character of the MgO substrate lattice for the topotaxial growth of the spinel lattice and the coherency of the solid state reaction with respect to the lattices of all the phases involved are demonstrated. Misfit dislocations at the TiN/MgO, TiN/spinel, and the spinel/MgO interfaces, as well as antiphase boundaries of the cation sublattice of the spinel phase, have also been observed.

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Time-resolved high-resolution electron microscopy of solid state direct bonding of gold and zinc oxide nanocrystallites at ambient temperature

Applied Physics Letters ◽

10.1063/1.118312 ◽

1997 ◽

Vol 70 (8) ◽

pp. 964-966 ◽

Cited By ~ 14

Author(s):

Tokushi Kizuka ◽

Kanji Yamada ◽

Nobuo Tanaka

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Solid State ◽

High Resolution ◽

Ambient Temperature ◽

High Resolution Electron Microscopy ◽

Time Resolved ◽

Resolution Electron

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Electron Microscopy Observations on the Role of Twinning in the Evolution of Microstructures

Microscopy and Microanalysis ◽

10.1017/s1431927602020184 ◽

2002 ◽

Vol 8 (4) ◽

pp. 247-256 ◽

Cited By ~ 18

Author(s):

U. Dahmen ◽

C.J.D. Hetherington ◽

V. Radmilovic ◽

E. Johnson ◽

S.Q. Xiao ◽

...

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Phase Transformations ◽

Grain Boundaries ◽

Microstructural Evolution ◽

Equilibrium Shape ◽

High Resolution Electron Microscopy ◽

Resolution Electron ◽

Multiple Twinning

Twinning plays an important role in phase transformations and can have significant effects on microstructural evolution. Different roles of twinning in the development of microstructures during precipitation and phase transformations are reviewed and illustrated with examples from investigations by high-resolution electron microscopy, including the effect of multiple twinning on the development of Ge precipitates in Al-Ge and Ag-Ge alloys, the twin dissociation of grain boundaries in Au, the formation of hexagonal Si at twin intersections and the effect of twin boundaries on the equilibrium shape of Pb inclusions in Al.

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Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy

MRS Proceedings ◽

10.1557/proc-2-185 ◽

1980 ◽

Vol 2 ◽

Cited By ~ 2

Author(s):

W. Krakow ◽

T.Y. Tan ◽

H. Foell

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Point Defect ◽

Image Matching ◽

Imaging Study ◽

High Resolution Electron Microscopy ◽

Structure Model ◽

Lattice Imaging ◽

Resolution Electron ◽

Chain Type

ABSTRACTIn a lattice imaging study of As+ ion damaged Si, we have detected =110> chain type defects which are not associated with any significant strain or configurational changes. By image matching of the experimental and calculated micrographs of vacancies and interstitials, it is established that about 100% more interstitial atoms may incorporate into a defective chain. A structure model of this defect is proposed wherein a di-interstitial, occupying the =100> split position, is incorporated into every available site along a =110> chain.

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