Selective Epitaxy of Compound Semiconductors in Movpe Growth: Growth, Modelling, and Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
T.F. Kuech ◽  
M. Goorsky ◽  
A. Palevsky ◽  
P. Solomon ◽  
M.A. Tischler
Keyword(s):  
Growth Process ◽  
Compound Semiconductors ◽  
Growth Front ◽  
Growth Conditions ◽  
Growth Technique ◽  
Relative Growth Rates ◽  
Quantum Well Structures ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

ABSTRACTSelective cpitaxial growth during metal-organic vapor phase epitaxy (MOVPE) can be accomplished over a wide range of growth conditions through the usC of alternative growth precursors. We have used chlorine-containing growth precursors, such as diethyl gallium chloride, (C2H5)2GaCl, to selectively grow GaAs and AlxGa1x As. The growth process has been thermodynamically modelled in order to estimate relative growth rates and alloy composition. This model indicates that near the growth front the growth process is chemically similar to the inorganic-based growth of compound semiconductors. This growth technique has been applied to the growth of extremely low resistance ohmic contact structures and quantum well structures.

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers

2007 ◽  
Vol 91 (8) ◽  
pp. 081117 ◽  
Author(s):  
D. Franke ◽  
M. Moehrle ◽  
J. Boettcher ◽  
P. Harde ◽  
A. Sigmund ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Emission Wavelength ◽  
Quantum Dot Lasers ◽  
Organic Vapor ◽  
Metal Organic

Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique

2008 ◽  
Vol 47 (11) ◽  
pp. 8269-8274 ◽  
Author(s):  
Yunpeng Wang ◽  
Haizheng Song ◽  
Masakazu Sugiyama ◽  
Yoshiaki Nakano ◽  
Yukihiro Shimogaki
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Organic Vapor ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic ◽  
Nonlinear Kinetic

Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (12) ◽  
pp. 125601 ◽  
Author(s):  
Yoshiyuki Kondo ◽  
Momoko Deura ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Selective Area ◽  
Initial Nucleation ◽  
Metal Organic

Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source

1998 ◽  
Vol 537 ◽  
Author(s):  
Ling Zhang ◽  
Rong Zhang ◽  
Marek P. Boleslawski ◽  
T.F. Kuech
Keyword(s):  
Growth Conditions ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Curve Line ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Trimethyl Gallium

AbstractMetal organic vapor phase epitaxy (MOVPE) of GaN has been carried out using diethyl gallium chloride (DEGaCI) and ammonia. The growth rate and efficiency of the DEGaCl-based growth decreases with increasing temperature when compared to trimethyl gallium (TMG)-based growth under similar conditions. Both low temperature buffer and the high temperature GaN layers were grown using the DEGaCI-NH3 precursor combination on the basal plane of sapphire and compared to similar structures grown using TMG and NH3. DEGaCl-based growth reveals an improved growth behavior under identical growth conditions to the conventional TMGa and ammonia growth. X-ray, Hall, and atomic force microscopy (AFM) measurements have been carried out on these samples providing a direct comparison of materials properties associated with these growth precursors. For the DEGaCl-based growth, the x-ray rocking curve line width, using the (0002) reflection, is as low as 300 arcsec on a 2.5-micron thick film. A RMS surface roughness of ∼0.5nm measured over a 10x10 micron area.

scholarly journals Optical Properties of AlGaN Quantum Well Structures

2000 ◽  
Vol 5 (S1) ◽  
pp. 696-702 ◽  
Author(s):  
Hideki Hirayama ◽  
Yasushi Enomoto ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Yoshinobu Aoyagi
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Wide Bandgap ◽  
Near Band Edge ◽  
Quantum Well Structures ◽  
Al Content ◽  
Organic Vapor ◽  
Metal Organic ◽  
Pl Emission ◽  
High Al Content

We demonstrate 230-250 nm efficient ultraviolet (UV) photoluminescence (PL) from AlN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metal-organic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL properties of high Al content AlGaN bulk (Al content: 85-95%) emitting from near band-edge. We systematically investigated the PL properties of AlGaN-MQWs consisting of wide bandgap AlGaN (Al content: 53-100%) barrier. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82N MQWs, respectively, at 77 K. The optimum value of well thickness was approximately 1.5 nm. The emission from the AlGaN MQWs were several tens of times stronger than that of bulk AlGaN. We found that the most efficient PL is obtained at around 240 nm from AlGaN MQWs with Al0.8Ga0.2N barriers. Also, we found that the PL from AlGaN MQW is as efficient as that of InGaN QWs at 77 K.

A Nucleation Study of GaN Multifunctional Nanostructures

2004 ◽  
Vol 831 ◽  
Author(s):  
Gupta Shalini ◽  
Kang Hun ◽  
Strassburg Martin ◽  
Asghar Ali ◽  
Senawiratne Jayantha ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Aspect Ratios ◽  
Nucleation Sites ◽  
Wide Range ◽  
Metal Organic ◽  
Multifunctional Nanostructures

ABSTRACTThis paper reports the Metal Organic Chemical Vapor Deposition (MOCVD) growth of GaN nanostructures. The use of MOCVD allows the direct integration of these nanostructures into pre-existing device technology. The formation of GaN nanostructures grown on AlN epitaxial layers were studied as a function of growth temperature, growth rate, V-III ratio and the amount of deposited material. A wide range of temperatures from 800 °C to 1100 °C and V-III ratios from 30 to 3500 were applied to determine the optimal growth conditions for nucleation studies in a modified production reactor. Small GaN nanostructures with lateral dimensions below 50 nm and low aspect ratios were obtained using relatively low temperatures of 815 °C and extreme metal-rich growth conditions. Island densities up to 1010 cm−2 were achieved using silane as an anti-surfactant to increase the available nucleation sites. Manganese has been incorporated into these nanostructures to enhance the multifunctional ferromagnetic properties of GaMnN.

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL10 ◽  
Author(s):  
Liyang Zhang ◽  
Ruben R. Lieten ◽  
Magdalena Latkowska ◽  
Michał Baranowski ◽  
Robert Kudrawiec ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Optical Characterization ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Organic Vapor ◽  
Metal Organic
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