Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
Henry P. Lee ◽  
Xiaoming Lius ◽  
Shyh Wang ◽  
Thomas George ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Quality ◽  
Two Dimensional ◽  
Double Crystal ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Gaas Films ◽  
Beam Technique

AbstractNominal 100 Å and 150 Å thick GaAs layers were deposited on Si substrates by a modulated molecular beam technique and normal molecular beam epitaxy (MBE) at 300 °C and 375 °C respectively for plan view and cross-sectional transmission electron microscopy (TEM) examinations. From coverage of Moire fringes, it is found that the nucleated GaAs films grown by the modulated molecular beam technique were thinner, streaker and more two-dimensional than the MBE grown films. The same modulated molecular beam technique was also used for the deposition of the initial buffer layer of 3µm thick GaAs on Si films. Results from the 77k photoluminescence(PL) and double crystal X ray diffraction measurements showed that these films have superior optical and structural quality compared to similar films grown by normal two-step MBE. The improvement is attributed to a more two-dimensional nucleation of GaAs films associated with the modulated molecular beam growth technique.

Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates

1990 ◽  
Vol 198 ◽  
Author(s):  
Henry P. Lee ◽  
Thomas George ◽  
Hyunchul Sohn ◽  
Jay Tu ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Gaas Films ◽  
Si Films ◽  
Initial Buffer

ABSTRACTThe nucleation and interfacial defect structure of thin GaAs films grown on reactive ion etched Si substrates by normal molecular beam epitaxy (MBE) and modulated molecular beam epitaxy (MMBE) at 300°C were studied by plan view and high resolution cross-sectional electron microscopy (TEM). Plan view TEM micrographs show a pronounced three-dimensional (3-d) island type nucleation for the MBE grown sample. A high density of microtwins is also found in these nucleated islands from high resolution cross-sectional TEM micrographs. The 3-d nucleation and the interfacial twinning is suppressed however in the MMBE grown samples. The FWHM of the (400) Bragg peak for 3 μm thick GaAs on Si films shows a reduction of 60 arcseconds when the initial buffer layer is grown by MMBE as compared to normal MBE.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1556-L1558 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Hirofumi Shimomura ◽  
Akio Kawabata ◽  
Mitsuo Kawabe
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Films

scholarly journals Структурные и морфологичеcкие свойства гибридных гетероструктур на основе GaN, выращенного на "податливой" подложке por-Si(111)

2019 ◽  
Vol 53 (8) ◽  
pp. 1141
Author(s):  
П.В. Середин ◽  
Д.Л. Голощапов ◽  
Д.С. Золотухин ◽  
А.С. Леньшин ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Device ◽  
Substrate Surface ◽  
Diameter Distribution ◽  
Two Dimensional ◽  
Si Substrates ◽  
Uniform Diameter ◽  
Substrate Temperatures

AbstractThe possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.

Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 897-903
Author(s):  
P. Mandeville ◽  
A. J. SpringThorpe ◽  
C. J. Miner ◽  
R. A. Bruce ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Parameters ◽  
Current Gain ◽  
Hall Resistance ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas

Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.

Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy

2009 ◽  
Vol 79-82 ◽  
pp. 823-826
Author(s):  
X.Y. Zhou ◽  
Yun Zhou ◽  
G.Y. Wang ◽  
Y. Wang ◽  
Helen Lai Wah Chan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Structure ◽  
Bias Field ◽  
Sio2 Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Laser Molecular Beam Epitaxy ◽  
Si Substrates ◽  
Transmission Electron

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
W. De Raedt ◽  
J. Vanhellemont ◽  
G. Zou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Spectral Response ◽  
Structural Quality ◽  
Rutherford Back Scattering ◽  
Si Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
K Current

ABSTRACTInAs and InAs0.85Sb0.15p-“i”-n structures were grown on InAs, GaAs and Si substrates by Molecular Beam Epitaxy. The structural quality of the layers is discussed using Transmission Electron Microscopy and Rutherford Back Scattering. The influence of the material quality on the 77 K current-voltage measurements is explained. The spectral response of the devices was measured demonstrating peak responsivities of 2.1 A/W at 3.5μm wavelength for InAs0.85Sb0.15 detectors with a 4.3 μm cut-off wavelength.

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

1995 ◽  
Vol 417 ◽  
Author(s):  
N. A. Bert ◽  
V. V. Chaldyshev ◽  
N. N. Faleev ◽  
A. E. Kunitsyn ◽  
V. V. Tret'yakov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Ordered Structures ◽  
Gaas Matrix ◽  
Delta Doping ◽  
Gaas Films ◽  
Spatial Ordering ◽  
Lt Gaas

AbstractWe have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well.

The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
M. M. AI-Jassim ◽  
J. P. Goral ◽  
P. Sheldon ◽  
K. M. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Misfit Dislocations ◽  
High Energy Electron ◽  
Cross Sectional ◽  
Plan View ◽  
Gaas Substrates

ABSTRACTEpitaxial InAs layers were grown by molecular beam epitaxy (MBE) on GaAs substrates. The initial stages of nucleation were studied by in situ reflection high energy electron diffraction (RHEED). Cross-sectional TEM examination was used to investigate the morphology of the growing layer, while plan-view examination revealed the generation of misfit dislocations. The growth mode was found to depend mainly on the conditions used to nucleate the epitaxial layer. In most cases, Stranski-Krastanov type of growth was observed.

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