Full-Contact Type Linear Image Sensor by Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
Masaki Hayase ◽  
Hirotaka Arita
Keyword(s):  
Amorphous Silicon ◽  
Low Cost ◽  
Image Sensor ◽  
Silicon Photodiode ◽  
Technical Data ◽  
New Device ◽  
Contact Type ◽  
Full Contact ◽  
New Type ◽  
Focusing Lens

ABSTRACTA new type of the contact linear image sensor array using amorphous silicon photodiodes has been developed. The new device, namely “Full Contact” type, linear image sensor, has a pinhole of 60 µm in diameter at the center of the amorphous silicon photodiode pixel. With this structure, the focusing lens can be removed and the optical path can be reduced by about one half as compared with an ordinary facsimile scanner. Eventually the device becomes quite compact in volume and production process are rather simple, result in low cost. LED driven 1728 pixels for A4 size and 2048 pixels for B4 size devices with the resolution of 8 dots/mm have been developed so far. A series of technical data for the development of devices and their operational performance are presented and discussed.

Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 458-461 ◽  
Author(s):  
Muneaki Yamaguchi ◽  
Yoshiyuki Kaneko ◽  
Ken Tsutsui
Keyword(s):  
Amorphous Silicon ◽  
Image Sensor ◽  
Two Dimensional ◽  
Contact Type

Direct-contact type image sensors using a novel amorphous-silicon photodiode array

1991 ◽  
Vol 12 (8) ◽  
pp. 413-415 ◽  
Author(s):  
H. Kakinuma ◽  
M. Mohri ◽  
M. Sakamoto ◽  
H. Sawai ◽  
S. Shibata ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Direct Contact ◽  
Image Sensors ◽  
Silicon Photodiode ◽  
Contact Type ◽  
Photodiode Array

A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor

1991 ◽  
Vol 30 (Part 2, No. 8B) ◽  
pp. L1505-L1507 ◽  
Author(s):  
Yasuyuki Shindoh ◽  
Koichi Haga ◽  
Kenji Yamamoto ◽  
Akishige Murakami ◽  
Masafumi Kumano ◽  
...  
Keyword(s):  
Image Sensor ◽  
Contact Type ◽  
New Type

A High Speed Contact-Type Image Sensor using Amorphous Silicon Alloy Pin Diodes

1992 ◽  
Vol 258 ◽  
Author(s):  
K. Kitamura ◽  
H. Mimura ◽  
K. Tsukada ◽  
T. Nakayama ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Signal To Noise Ratio ◽  
Image Sensor ◽  
Signal To Noise ◽  
Pin Diodes ◽  
Channel Output ◽  
Silicon Alloy ◽  
Contact Type ◽  
The Matrix ◽  
Noise Ratio

ABSTRACTA new A4-size contact-type image sensor with 8 elements per millimeter (1,728 elements) was developed by using amorphous silicon alloy pin photodiodes as the light receiving elements. The matrix switching method is employed for signal reading. This method can read the signals from all of the 1,728 photodiodes using a 54 (54-channel input) x 32 (32.channel output) matrix switching scheme. It is advantageous in that the required input and output external circuits can be simplified. To prevent signal crosstalk between the diodes in the matrix, amorphous silicon alloy pin diodes, which are made in the same process as the photodiodes for maintaining a low cost, are connected in series to each photodiode in reverse polarity as blocking diodes.To achieve superior signal-to-noise ratio and response at the same time, amorphous silicon alloy pin diodes are optimized to satisfy both a high photo-to-dark ratio and a high rectification ratio. The image sensor can operate at up to 2 MHz signal reading clock, maintaining a signal-to-noise ratio of over 24 dB under 0. 1–1x sec exposure.

Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
M J Powell ◽  
C Glasse ◽  
I D French ◽  
A R Franklin ◽  
J R Hughes ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Noise Performance ◽  
Silicon Thin Film ◽  
Silicon Photodiode ◽  
Insulating Layer ◽  
X Ray

ABSTRACTWe have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Influence of Unsymmetrical Electrode structure on a-Si Photodiode Characteristics

1986 ◽  
Vol 70 ◽  
Author(s):  
M. Hayama ◽  
K. Kobayashi ◽  
H. Miki ◽  
Y. Onishi
Keyword(s):  
Amorphous Silicon ◽  
Image Sensor ◽  
Electrode Structure ◽  
Contact Type ◽  
Common Electrode ◽  
Photodiode Array

ABSTRACTAmorphous silicon(a-Si) stripe p-i junction photodiode array for contact-type image sensor of a facsimile has been developed and investigated especially with regard to its unsymmetrical electrode structure. This sensor consists of a p-i a-Si stripe layer, Cr separate electrodes, and an ITO common electrode. As a result, it is found that the photosensitive region of a-Si stripe type photodiode exists not only in a-Si sub-region having both upper and lower electrodes but also in a-Si sub-regions having upper or lower one-sided electrode. It is considered that photocarrier collecting mechanisms in the a-Si sub-regions are different and result to the different photodiode characteristics.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

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