Foreign Gas Effect upon Excimer Laser Ablation of Polymer

1990 ◽  
Vol 191 ◽  
Author(s):  
N. Shimo ◽  
T. Uchida ◽  
H. Masuhara
Keyword(s):  
Surface Modification ◽  
Laser Ablation ◽  
Etch Rate ◽  
Polymer Surface ◽  
Active Surface ◽  
Inert Gases ◽  
Surface Chemical ◽  
Excimer Laser Ablation ◽  
Surface Chemical Composition ◽  
Gas Effect

ABSTRACTWe have examined effect of foreign gas and its pressure upon etch rate, surface morphology, and surface chemical composition. Etch rate is suppressed by adding inert gases such as argon and helium. On the contrary, oxygen enhances the rate by increasing its pressure, indicating that oxygen molecules react with ablated polymer surface. From the results of XPS analyses, active surface of ablated polymer reacts also with ammonia and hexamethyldisilane. It is considered that laser ablation has a high potentiality of simultaneous microfabrication and photochemical surface modification of polymer.

Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions

1990 ◽  
Vol 203 ◽  
Author(s):  
Kyung W. Paik ◽  
Richard J. Saia ◽  
John J. Chera
Keyword(s):  
Etch Rate ◽  
Plasma Modification ◽  
Surface Chemical ◽  
Ion Sputtering ◽  
Plasma Ions ◽  
Surface Chemical Composition ◽  
Atomic Fluorine ◽  
Oxygen Gas ◽  
Compositional Changes ◽  
Etch Rates

ABSTRACTThe etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not produce the surface SiO2, because of its faster Si and SiO2 etch rates. Ar ion sputtering following the plasma modification, restored the surface chemical composition to a state similar to the initial BCB surface.

Surface modification of elastomer/carbon composite by Nd+:YAG laser and KrF excimer laser ablation

1999 ◽  
Vol 141 (1-2) ◽  
pp. 25-34 ◽  
Author(s):  
Jean-François Silvain ◽  
Hiroyuki Niino ◽  
Shigeyuki Ono ◽  
Shinya Nakaoka ◽  
Akira Yabe
Keyword(s):  
Surface Modification ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Carbon Composite ◽  
Yag Laser ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

Picosecond UV Excimer Laser Ablation of LiNbO3

1990 ◽  
Vol 191 ◽  
Author(s):  
Th. Beuermann ◽  
H. J. Brinkmann ◽  
T. Damm ◽  
M. Stuke
Keyword(s):  
Laser Ablation ◽  
Simple Model ◽  
Lithium Niobate ◽  
Excimer Laser ◽  
Material Removal ◽  
Etch Rate ◽  
Laser Pulses ◽  
Picosecond Pulses ◽  
Excimer Laser Ablation ◽  
Order Of Magnitude

ABSTRACTUltrashort UV excimer laser ablation of materials shows several advantages over conventional UV excimer laser ablation. We describe new experimental results on lithium niobate, LiNbO3, using 308 nm pulses of 1 ps duration. The fluence threshold for material removal is reduced by one order of magnitude when compared with 16 ns pulses at 308 nm. In addition the etch rate is up to three times higher for picosecond pulses and it is independent of the diameter of the ablation area. We discuss a simple model describing the etching and ablation behaviour of materials upon interaction with UV excimer laser pulses of different pulse duration.

Surface modification of carbon black/elastomer composite by excimer laser ablation

1998 ◽  
Vol 127-129 ◽  
pp. 821-825 ◽  
Author(s):  
Shigeyuki Ono ◽  
Shinya Nakaoka ◽  
Jun Wang ◽  
Hiroyuki Niino ◽  
Akira Yabe
Keyword(s):  
Surface Modification ◽  
Laser Ablation ◽  
Carbon Black ◽  
Excimer Laser ◽  
Excimer Laser Ablation

scholarly journals KrF excimer laser ablation in helium yields the highest amount of SWCNTs over other inert gases

2015 ◽  
Author(s):  
Calin Moise ◽  
◽  
Adrian Katona ◽  
Doru Dinescu ◽  
Jasim Al-zanganawee ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Inert Gases ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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