Excimer laser ablation of thick SiOx-films: Etch rate measurements and simulation of the ablation threshold

2012 ◽  
Vol 101 (9) ◽  
pp. 091901 ◽  
Author(s):  
J. Ihlemann ◽  
J. Meinertz ◽  
G. Danev
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Etch Rate ◽  
Ablation Threshold ◽  
Excimer Laser Ablation

Fabrication of High Density Silicon Nano-Dots by Excimer Laser Irradiation on Block Copolymer Masks

2007 ◽  
Author(s):  
Dae Up Ahn ◽  
Erol Sancaktar
Keyword(s):  
Laser Ablation ◽  
Block Copolymer ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Ablation Threshold ◽  
Laser Intensity ◽  
Selective Etching ◽  
Time Duration ◽  
Excimer Laser Ablation ◽  
Excimer Laser Irradiation

We report easy and fast fabrication methods to prepare densely packed polystyrene (PS) and silicon nano-dots using one-step excimer laser irradiation on cylindrically nanopatterned block copolymer materials, without any additional selective etching steps before a non-selective etching. Preferential etching in more ultraviolet (UV)-sensitive block component, and non-selective removal of all block components allowed transferring nanopatterns in block copolymer masks to inorganic silicon substrates, when an appropriate laser intensity was used. Surface melt flows of block components, which severely undermine the initial orders of nanopatterns in a block copolymer mask, were observed at the laser intensity near the ablation threshold of the less UV-sensitive component. Thus, in order to obtain mask-image-like topographic nanopatterns on the target material surfaces, the intensity of excimer laser radiation should be sufficiently lower than the ablation threshold of the less UV-sensitive component as long as the intensity is higher than that of the more UV-sensitive component. Numerical analyses on the photothermal excimer laser ablation in binary mixture systems predicted the presence of a matrix-assisted excimer laser ablation in the less UV-sensitive component at the laser intensity lower than its ablation threshold, owing to the heat conduction from the more UV-sensitive component during the nanoscopic level of time duration.

Investigation of excimer laser ablation threshold of polymers using a microphone

2002 ◽  
Vol 197-198 ◽  
pp. 800-804 ◽  
Author(s):  
Jörg Krüger ◽  
Hiroyuki Niino ◽  
Akira Yabe
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Ablation Threshold ◽  
Excimer Laser Ablation

Picosecond UV Excimer Laser Ablation of LiNbO3

1990 ◽  
Vol 191 ◽  
Author(s):  
Th. Beuermann ◽  
H. J. Brinkmann ◽  
T. Damm ◽  
M. Stuke
Keyword(s):  
Laser Ablation ◽  
Simple Model ◽  
Lithium Niobate ◽  
Excimer Laser ◽  
Material Removal ◽  
Etch Rate ◽  
Laser Pulses ◽  
Picosecond Pulses ◽  
Excimer Laser Ablation ◽  
Order Of Magnitude

ABSTRACTUltrashort UV excimer laser ablation of materials shows several advantages over conventional UV excimer laser ablation. We describe new experimental results on lithium niobate, LiNbO3, using 308 nm pulses of 1 ps duration. The fluence threshold for material removal is reduced by one order of magnitude when compared with 16 ns pulses at 308 nm. In addition the etch rate is up to three times higher for picosecond pulses and it is independent of the diameter of the ablation area. We discuss a simple model describing the etching and ablation behaviour of materials upon interaction with UV excimer laser pulses of different pulse duration.

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