Boron Diffusion in Bulk Cobalt Disilicide

1990 ◽  
Vol 187 ◽  
Author(s):  
P. Gas ◽  
C. Zaring ◽  
B.G. Svensson ◽  
M. Östling ◽  
H.J. Whitlow ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Activation Energy ◽  
Surface Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Diffusion ◽  
Boron Diffusion ◽  
Cobalt Disilicide ◽  
Boron Distribution ◽  
Secondary Ion

AbstractThe lattice diffusion of boron in bulk cobalt disilicide has been studied at temperatures between 450 and 950°C. Two different diffusion sources, a deposited surface layer of boron and an implanted boron distribution, were used. The lattice diffusion coefficient has been deduced from the boron profiles measured by secondary ion mass spectrometry (SIMS); in the studied temperature range the coefficient varies between 6.2×10−17 and 3.0× 10−11 cm2/s with an activation energy of 2.0 eV. These values reveal a very rapid lattice diffusion and agree with results reported previously in the literature concerning redistribution of boron implanted in thin films of CoSi2, and it also emphasizes the important role played by interfaces during the boron redistribution.

An investigation of cobalt oxide based nanocrystalline thin films by secondary ion mass spectrometry

2001 ◽  
Vol 15 (17) ◽  
pp. 1621-1624 ◽  
Author(s):  
Simona Barison ◽  
Davide Barreca ◽  
Sergio Daolio ◽  
Monica Fabrizio ◽  
Eugenio Tondello
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Cobalt Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Nanocrystalline Thin Films

Transportation of Na and Li in Hydrothermally Grown ZnO

2009 ◽  
Vol 1201 ◽  
Author(s):  
Pekka Tapio Neuvonen ◽  
Lasse Vines ◽  
Klaus Magnus Johansen ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Formation Energy ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Constant ◽  
Zinc Vacancy ◽  
Diffusion Source ◽  
Secondary Ion ◽  
Zinc Site ◽  
Limited Diffusion

AbstractSecondary ion mass spectrometry has been applied to study the transportation of Na and Li in hydrothermally grown ZnO. A dose of 1015 cm-2 of Na+ was implanted into ZnO to act as a diffusion source. A clear trap limited diffusion is observed at temperatures above 550 °C. From these profiles, an activation energy for the transport of Na of ∼1.7 eV has been extracted. The prefactor for the diffusion constant and the solid solubility of Na cannot be deduced independently from the present data but their product estimated to be ∼3 × 1016 cm-1s-1. A dissociation energy of ∼2.4 eV is extracted for the trapped Na. The measured Na and Li profiles show that Li and Na compete for the same traps and interact in a way that Li is depleted from Na-rich regions. This is attributed to a lower formation energy of Na-on-zinc-site than that for Li-on-zinc-site defects and the zinc vacancy is considered as a major trap for migrating Na and Li atoms. Consequently, the diffusivity of Li is difficult to extract accurately from the present data, but in its interstitial configuration Li is indeed highly mobile having a diffusivity in excess of 10-11 cm2s-1 at 500 °C.

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

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