Geometrical Effects and Disintegration of Narrow TiSi2/Poly-Si Lines

1990 ◽  
Vol 182 ◽  
Author(s):  
H. Norström ◽  
K. Maex ◽  
P. Vandenabeele
Keyword(s):  
Thermal Stability ◽  
Line Width ◽  
Side Wall ◽  
Geometrical Shape ◽  
Cross Sectional ◽  
Line Widths ◽  
Geometrical Effects ◽  
Thermal Stability Of

AbstractThe geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to theactual line-width of the structures. At the onset of degradation, at and above 900 ºC, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

Geometrical effects and disintegration of narrow TiSi2/poly-Si lines

1990 ◽  
Vol 181 ◽  
Author(s):  
H. Norström ◽  
K. Maex ◽  
P. Vandenabeele
Keyword(s):  
Thermal Stability ◽  
Line Width ◽  
Side Wall ◽  
Geometrical Shape ◽  
Cross Sectional ◽  
Line Widths ◽  
Geometrical Effects ◽  
Thermal Stability Of

ABSTRACTThe geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to the actual line-width of the structures. At the onset of degradation, at and above 900°C, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

Thermal stability of Pt nanowires manufactured by Ga+ focused ion beam (FIB)

2003 ◽  
Vol 777 ◽  
Author(s):  
B.J. Inkson ◽  
G. Dehm
Keyword(s):  
Thermal Stability ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Surface ◽  
Cross Sectional ◽  
Partial Crystallization ◽  
Fcc Structure ◽  
Thermal Stability Of ◽  
Pt Nanowires

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

Structural characterization and thermal stability of W/Si multilayers

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Layer Thickness Ratio ◽  
Transmission Electron ◽  
Thermal Stability Of ◽  
Beam Deposition

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

scholarly journals Structure and Thermal Stability of Copper Nitride Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Guangan Zhang ◽  
Zhibin Lu ◽  
Jibin Pu ◽  
Guizhi Wu ◽  
Kaiyuan Wang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Thermal Stabilities ◽  
Cross Sectional ◽  
Copper Nitride ◽  
Partial Pressures ◽  
Dc Reactive Magnetron Sputtering ◽  
Thermal Stability Of

Copper nitride (Cu3N) thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

Thermal Stability of TiSi2 on High Dose Ion Implanted Silicon

1993 ◽  
Vol 303 ◽  
Author(s):  
J.F. Chen ◽  
L.J. Chen ◽  
W. Lur
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
High Dose ◽  
Simultaneous Presence ◽  
Cross Sectional ◽  
Plan View ◽  
Microstructural Observation ◽  
Transmission Electron ◽  
Resistance Data ◽  
Thermal Stability Of

ABSTRACTThermal stability of TiSi2 on blank, high–dose BF2+–, B+–, F+–, As+–, and P+–implanted silicon has been studied by both cross–sectional and plan–view transmission electron microscopy as well as by sheet resistance measurements. The surface morphology of TiSi2 was found to be significantly influenced by the implantation in silicon substrate.Simultaneous presence of B and F was found to be most effective in stabilizing the TiSi2 thin films. Sheet resistance data were found to correlate well with the morphological and microstructural observation. The mechanisms for the stabilization of silicide films are discussed.

Thermal Stability of The Copper/Tantalum Interfaces In Advanced Microelectronic Metallization

1999 ◽  
Vol 5 (S2) ◽  
pp. 176-177
Author(s):  
Kee-Won Kwon ◽  
Hoo-Jeong Lee ◽  
Robert Sinclair
Keyword(s):  
Thermal Stability ◽  
Dielectric Materials ◽  
Copper Metallization ◽  
Cross Sectional ◽  
Plan View ◽  
Cu Metallization ◽  
Microelectronic Devices ◽  
Cu Film ◽  
Bcc Phase ◽  
Thermal Stability Of

In the copper metallization adopted for better speed and reliability in microelectronic devices, the choice of underlayer is one of the major concerns. Its requirements include low electrical resistance, adhesion to Cu and adjacent dielectric materials, confinement of Cu from drifting, and nucleation and texture enhancement of the overlying Cu film. Metallic tantalum is a very promising candidate. In this paper, the thermal stability of Cu/Ta interfaces is investigated to estimate the reliability of such a Ta underlayer.Thin Cu and Ta films were consecutively deposited without breaking vacuum using a dc sputtering method to simulate the seed layer and underlayer in a Cu metallization structure. All the synthesized Ta films were the metastable tetragonal structure rather than the stable body-centered cubic (bcc) phase.We have shown that (111) Cu grows epitaxially on top of (002) tetragonal Ta even though the Cu and Ta have hexagonal and tetragonal atomic arrangement on those planes, respectively. Using electron diffraction in cross-sectional and plan-view samples, an unexpected atomic matching at the interface was discovered as shown in Figure 1(b).

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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