scholarly journals Structure and Thermal Stability of Copper Nitride Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Guangan Zhang ◽  
Zhibin Lu ◽  
Jibin Pu ◽  
Guizhi Wu ◽  
Kaiyuan Wang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Thermal Stabilities ◽  
Cross Sectional ◽  
Copper Nitride ◽  
Partial Pressures ◽  
Dc Reactive Magnetron Sputtering ◽  
Thermal Stability Of

Copper nitride (Cu3N) thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

Syntheses, Crystal Structures and Thermal Stability of Co(II) and Zn(II) Complexes with Ethyl Carbazate

2005 ◽  
Vol 60 (5) ◽  
pp. 505-510 ◽  
Author(s):  
Tong-Lai Zhang ◽  
Jiang-Chuang Song ◽  
Jian-Guo Zhang ◽  
Gui-Xia Ma ◽  
Kai-Bei Yu
Keyword(s):  
Thermal Stability ◽  
Aqueous Solutions ◽  
Diffraction Analysis ◽  
Single Crystals ◽  
Slow Evaporation ◽  
X Ray Diffraction ◽  
Element Analysis ◽  
Thermal Stabilities ◽  
X Ray ◽  
Thermal Stability Of

Cobalt(II) and zinc(II) complexes of ethyl carbazate (ECZ), [Co(ECZ)3](NO3)2 and [Zn(ECZ)3] (NO3)2, were synthesized. Single crystals of these two compounds were grown from aqueous solutions using a slow evaporation method. Their structures have been determined by X-ray diffraction analysis. Both of them are monoclinic with space group P21/n. The complexes are further characterized by element analysis and IR measurements. Their thermal stabilities are studied by using TG-DTG, DSC techniques. When heated to 350 °C, only metal oxide was left for both complexes.

Structural characterization and thermal stability of W/Si multilayers

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Layer Thickness Ratio ◽  
Transmission Electron ◽  
Thermal Stability Of ◽  
Beam Deposition

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Synthesis and Characterization of a Three-dimensional Coordination Polymer Based on Copper(II) Nitrate and a Tridentate Tetrazole Ligand

2009 ◽  
Vol 64 (11-12) ◽  
pp. 1535-1541 ◽  
Author(s):  
Vera Hartdegen ◽  
Thomas M. Klapötke ◽  
Stefan M. Sproll
Keyword(s):  
Thermal Stability ◽  
Coordination Polymer ◽  
Physical Stability ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Thermal Stabilities ◽  
Dsc Measurements ◽  
Ethyl Amine ◽  
Thermal Stability Of

Tris(2-(1H-tetrazol-1-yl)ethyl)amine (1) was synthesized as gas-generating agent and characterized by vibrational (IR) and NMR spectroscopy. The energetic properties were determined by bomb calorimetric measurements along with calculations using the EXPLO5 software. Tris(2-(1H-tetrazol- 1-yl)ethyl)amine (1) was used for further reactions with copper(II) nitrate to form a three-dimensional coordination polymer 3. Both compounds were characterized by single crystal X-ray diffraction. The thermal stability was determined by DSC measurements and the physical stability by BAMstandards. Tris(2-(1H-tetrazol-1-yl)ethyl)amine (1) proved to be suitable as gas-generating agent with sufficient physical and thermal stabilities. The low thermal stability of the copper complex 3 disqualifies it as potential colorant agent for pyrotechnical applications

Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 218-221
Author(s):  
Jian Rong Xiao ◽  
Ai Hua Jiang ◽  
Ye Guang Liang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Copper Nitride ◽  
X Ray ◽  
Atomic Force ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

Improvement of Thermal Stability of ZrB2/Si3N4 Coatings as High-Temperature Solar Selective Absorbers

2014 ◽  
Vol 521 ◽  
pp. 581-585
Author(s):  
Yao Ming Sun ◽  
Xiu Di Xiao ◽  
Guan Qi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Deposition Parameters ◽  
Thermal Stability Of

ZrB2 thin films were prepared by DC magnetron sputtering technique. The microstructure, thermal stability and optical properties of thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The compactness of ZrB2 thin films was studied to improve the thermal stability by optimizing the deposition parameters. The compactness and thermal stability of the coatings were improved with the increase of substrate temperature. However, these properties of the coatings were enhanced firstly and then weakened with the increase of substrate bias voltage. The selectivity of sample deposited at high substrate temperature and suitable bias voltage degraded slightly after annealing at 500 °C/100 h in air. This provided a new way to improve the thermal stability of high-temperature solar selective absorber.

scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

Thermal Stability of Amorphous Ni-Nb Thin Films for Use as Diffusion Barriers

1987 ◽  
Vol 108 ◽  
Author(s):  
S. N. Farrens ◽  
J. H. Perepezko ◽  
B. L. Doyle ◽  
S. R. Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Amorphous Thin Films ◽  
Si Substrates ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Thermal Stability Of

ABSTRACTThe interdiffusion and crystallization reactions between amorphous Ni-Nb alloy films and Si substrates and several overlayer metals have been monitored by x-ray diffraction and high resolution Rutherford backscattering spectroscopy. Free standing amorphous thin films of Ni-Nb alloys crystallize in one hour at temperatures between 600–625 °C and show little dependence of the crystallization temperature, Tx, on composition over the range from 30–80 at.% Ni. However, in films that are sputter deposited onto Si substrates Tx tends to increase with increasing Nb composition. Ni60Nb40 samples without overlayers crystallize at 650–700 °C. Enhancement of the thermal stability to 700–750 °C is achieved with a Nb overlayer. In contrast, a Ni overlayer can reduce Tx to 450 °C. At the film/substrate interface silicide formation reactions with Ni from the film contribute to a destabilization of the amorphous alloy. The modification of Tx with Ni, Nb, and other overlayers appears to be related to changes in the reaction kinetics associated with penetration of the overlayer into the film.

Effect of carbon content on thermal stability of Ti–Cx–Ny thin films

2008 ◽  
Vol 23 (3) ◽  
pp. 671-678 ◽  
Author(s):  
Y.H. Lu ◽  
Y.G. Shen
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Film Structure ◽  
Mechanical Behaviors ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Hardness Values ◽  
Positive Effect ◽  
Thermal Stability Of ◽  
Nanocomposite Structures

A series of Ti–Cx–Ny thin films with solid-solution and nanocomposite structures were deposited at 500 °C by reactive, unbalanced, direct-current magnetron sputtering. These films were subsequently vacuum annealed at 600, 700, 800, 900, and 1000 °C for 1 h. The effect of C content on the thermal stability of Ti–Cx–Ny thin films was investigated by way of studying the nanostructure and mechanical behaviors of pre- and postannealed samples using x-ray diffraction, high-resolution transmission electron microscopy, Raman spectroscopy, and microindentation measurements. The result indicated that C content played a great role in the nanostructure of Ti–Cx–Ny thin films. A small amount of C fully dissolved in the TiN lattice and produced SS Ti(N,C) thin films. Nanocomposite nanocrystalline (nc)-Ti(N,C)/amorphous-(C, CNx) thin films were followed to be formed with the incorporation of more C. On the other hand, the addition of C had a positive effect on the structural stability of Ti–Cx–Ny thin films. This effect was further enhanced after the formation of a nanocomposite structure. However, neither C content nor film structure had an effect on the thermal stability of mechanical behaviors. Both microhardness and residual stress were successively decreased with temperature and did not show any temperature retardation. The decrease in hardness values was found to be attributed to a decrease of residual compressive stress because of defect annihilation and an increase in nc size.

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